Peiji Geng

Temperature-dependent critical resolved shear stress model for (Cu–Au)–Co alloys in pure shear mode

Abstract Based on a limited energy storage viewpoint proposed by our team, it is assumed that there is a maximum constant value for the maximum storage of energy per unit volume when dislocation slip starts in a metal. A temperature-dependent critical resolved shear stress (CRSS) model without any fitting parameters is developed for metals in a pure shear mode. The CRSSs of Cu, Cu–Au, Cu–Co and Cu–Au–Co in the pure shear mode are predicted, and are in excellent agreement with the experimental results. This work offers an approach to predict the temperature-dependent CRSS for metals in the pure shear mode.

Effects of temperature and redshift on the refractive index of semiconductors

A theoretical model is developed to study the effect of temperature on the refractive index of semiconductors. The model can be used to predict the refractive index at temperatures ranging from near absolute zero to high temperatures. The theoretical results at wavelengths far from the band-edge region agree well with the available experimental results. In the near-band-edge region, the redshift is found to have an obvious effect on the refractive index at elevated temperatures, and a method is provided for considering this effect. Further verification of the model considering the redshift is included and is consistent with the available experimental results. This theoretical method for prediction of temperature-dependent refractive indices of semiconductors may be helpful in the design of the optical devices.A theoretical model is developed to study the effect of temperature on the refractive index of semiconductors. The model can be used to predict the refractive index at temperatures ranging from near absolute zero to high temperatures. The theoretical results at wavelengths far from the band-edge region agree well with the available experimental results. In the near-band-edge region, the redshift is found to have an obvious effect on the refractive index at elevated temperatures, and a method is provided for considering this effect. Further verification of the model considering the redshift is included and is consistent with the available experimental results. This theoretical method for prediction of temperature-dependent refractive indices of semiconductors may be helpful in the design of the optical devices.