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Dive into the research topics where Peixin Qian is active.

Publication


Featured researches published by Peixin Qian.


international conference on solid state and integrated circuits technology | 2004

Cascadable direct-coupled wideband SiGe HBT MMIC [amplifier]

Wentao Huang; Xiaoyi Xiong; Gaoqing Li; Wei Zhang; Xiyou Li; Zhihong Liu; Peixin Qian

This paper reports the design and performance of a single-stage Darlington-structure SiGe hetero-junction bipolar transistor (HBT) microwave monolithic integrated circuit based on an advanced SiGe HBT technology. The circuit has 11.6 dB gain at 850 MHz and 8.0 dB gain at 1950 MHz. The input and output VSWRs are 3.01:1 and 2.66:1 at 3000 MHz, respectively. This circuit consumes 140 mW DC power and has a chip size of 0.32/spl times/0.42 mm/sup 2/.


Archive | 2008

NPN type germanium-silicon heterogenous dual-pole transistor and its making method

Wei Zhang; Peixin Qian; Zhihong Liu; Yang Xu; Xiaoyi Xiong; Wei Zhou; Yudong Wang; Gaoqing Li; Zhi Jiang; Ping Xu


Archive | 2009

Self-alignment elevated external base area or heterojunction bipolar transistor and manufacturing method thereof

Fu Jun; Yudong Wang; Yang Xu; Ping Xu; Zhi Jiang; Peixin Qian


Archive | 2008

Germanium silicon heterogeneous crystal transistor with elevated external base area and its making technology

Yudong Wang; Wei Zhou; Yang Xu; Fu Jun; Wei Zhang; Zhi Jiang; Peixin Qian


Applied Surface Science | 2006

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Xiangdong Xu; Hockleong Kweh; Zhengcao Zhang; Zhihong Liu; Wei Zhou; Wei Zhang; Peixin Qian


Archive | 2011

Preparation method of selective buried collector region structure applicable to bipolar transistor

Fu Jun; Wei Zhang; Liren Yan; Yudong Wang; Ping Xu; Zhi Jiang; Peixin Qian


Archive | 2010

Infrared rapid heat-treatment cavity for semiconductor chip with movable heat baffle

Peixin Qian; Huiwang Lin; Peng Liu; Zhihong Liu; Ronghua Liu


Archive | 2008

Non-self aligning raising externally basilar space germanium-siliconhetero-junction transistor and technique of preparing the same

Yudong Wang; Yang Xu; Fu Jun; Wei Zhou; Wei Zhang; Zhi Jiang; Peixin Qian


Archive | 2009

Germanium silicon heterogeneous crystal transistor with elevated external base area and its prodoucing process

Yudong Wang; Wei Zhou; Yang Xu; Fu Jun; Wei Zhang; Zhi Jiang; Peixin Qian


Archive | 2006

Superhigh vacuum chemical vapor deposition epitoxy system with rotary lining

Peixin Qian; Ronghua Liu; Huiwang Lin; Zhihong Liu; Changchun Chen; Wei Zhang

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Jie He

Tsinghua University

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