Peng Chunrong

A new fabrication process for the SOI-based miniature electric field sensor

This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor. This new process uses polyimide film to release the SiO2 layer. Compared with the CO2 critical point release method, it significantly improves the device surface cleanliness and shortens the process flow. The impurity on the base layer is analyzed. The problem of peak and butterfly-type contamination occurring on the base layer of the SOI wafer during the DRIE process is discussed and solved by thickening the photoresist layer and coating with polyimide film twice. This new process could fabricate MEMS sensors and actuators such as SOI-based electric field sensors, gyroscopes, and micro mirrors and can be an alternative fabrication process compared to commercial SOIMUMPS fabrication processes.

A resonant miniature electric field sensor using bulk-micromachining process

Abstract A novel design of a resonant miniature electric field sensor based on microfabrication technology is proposed. The operating principles and specifications, the design structure, and the silicon-based bulk-micromachining fabrication process are presented. The finite element simulation shows that our design can obtain good results in device parameters setting, and its simplicity and low-cost features make it an attractive product for future applications. ∗Supported by the National Natural Science Foundation of China(Grant No. 60172001)