Pengcheng Tao

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

In this paper, hexagonal structure phase-pure wide-band gap e-Ga2O3 films were grown by metal organic chemical vapor deposition on 6H-SiC substrates. The e-Ga2O3 films with good crystal quality were verified by high-resolution X-ray diffraction. The out-of-plane epitaxial relationship between e-Ga2O3 films and 6H-SiC substrates is confirmed to be e-Ga2O3 (0001)//6H-SiC (0001), and the in-plane epitaxial relationship is also confirmed to be e-Ga2O3 ⟨ 112¯0⟩//6H-SiC ⟨ 112¯0⟩. The SEM and AFM images show that the e-Ga2O3 films are uniform and flat. The e-Ga2O3 films are thermally stable up to approximately 800 °C and begin to transform into β-phase Ga2O3 at 850 °C. Then, they are completely converted to β-Ga2O3 films under 900 °C. The high-quality e-Ga2O3 films with hexagonal structure have potential application in the optoelectronic field.

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Negative differential resistance (NDR) behavior was observed in low Al-composition p-GaN/Mg-doped-Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate. The energy band and free carrier concentration of hetero-junction were studied by the model of the self-consistent solution of Schrodinger-Poisson equations combined with polarization engineering theory. At the forward bias of 0.95 V, the NDR effect has a high peak-to-valley current ratio of ∼9 with a peak current of 22.4 mA (∼current density of 11.4 A/cm2). An interesting phenomenon of NDR disappearance after consecutive scans and recurrence after electrical treatment was observed, which was associated with Poole-Frenkel effect.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm2 at the reverse bias of −1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

The β-Ga2O3 film is grown on c-plane sapphire (Al2O3) substrate using metal organic chemical deposition method. According to high resolution X-ray diffraction measurement results, the epitaxial relationship between β-Ga2O3 film and c-plane sapphire was confirmed. The β-Ga2O3 film is (

Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate

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Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H–SiC by metal-organic chemical vapor deposition

2¯01) preferred orientation and β-Ga2O3 〈102〉 and 〈010〉 directions are parallel to Al2O3 〈

Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode

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