Pengke Li

Spin-orbit symmetries of conduction electrons in silicon.

We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the multivalley conduction band. We find excellent agreement with experimental results. Similar to the usage of the Kane Hamiltonian in direct band-gap semiconductors, the new Hamiltonian can be used to study spin properties of electrons in silicon.

Intrinsic spin lifetime of conduction electrons in germanium

We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting anisotropy in spin relaxation. The form of the intravalley spin-flip matrix element is derived from the eigenstates of a compact spin-dependent

Inelastic electron tunneling spectroscopy of local “spin accumulation” devices

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Anisotropy-Driven Spin Relaxation in Germanium

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Interpreting current-induced spin polarization in topological insulator surface states

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Tunable spin junction

Hamiltonian in the vicinity of the

Robust zero-energy bound states in a helical lattice

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Spin-Polarization Control in a Two-Dimensional Semiconductor

point (where thermal electrons are populated in Ge). Spin lifetimes from analytical integrations of the intravalley and intervalley matrix elements show excellent agreement with independent results from elaborate numerical methods.