Pengtao Jing

Toward Efficient Orange Emissive Carbon Nanodots through Conjugated sp2‐Domain Controlling and Surface Charges Engineering

A strategy of achieving efficient orange emissive carbon nanodots (CNDs) with large sized conjugated sp(2) -domain is achieved in a solvothermal synthetic route using dimethylformamide as solvent, which is the basis of orange bandgap emission; enhanced orange emission with photoluminescent quantum yield of 46% is realized through surface charges engineering by surface metal-cation-functionalization.

Towards efficient solid-state photoluminescence based on carbon-nanodots and starch composites

A new type of environmentally friendly phosphor based on carbon nanodots (CDs) has been developed through the dispersion of CDs by integrating the CDs with starch particles. The starch particles contain large numbers of hydroxyl groups around the surfaces, which can effectively absorb the CDs, whose surfaces are functionalized by lots of carboxyl and amide groups, through hydrogen bonding. Effective dispersion of CDs on the surfaces of starch particles can suppress the non-radiative decay processes and photoluminescence (PL) quenching induced by aggregation of CDs. The starch matrix neither competes for absorbing excitation light nor absorbs the emissions of CDs, which leads to efficient PL emitting. As a result, the starch/CD phosphors with a quantum yield of ∼50% were obtained. The starch/CD phosphors show great potential in phosphor-based light emitting diodes, temperature sensors, and patterning.

Supra-(carbon nanodots) with a strong visible to near-infrared absorption band and efficient photothermal conversion

A novel concept and approach to engineering carbon nanodots (CNDs) were explored to overcome the limited light absorption of CNDs in low-energy spectral regions. In this work, we constructed a novel type of supra-CND by the assembly of surface charge-confined CNDs through possible electrostatic interactions and hydrogen bonding. The resulting supra-CNDs are the first to feature a strong, well-defined absorption band in the visible to near-infrared (NIR) range and to exhibit effective NIR photothermal conversion performance with high photothermal conversion efficiency in excess of 50%.

High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure

Deep-blue, high color purity electroluminescence (EL) is demonstrated in an inverted light-emitting device using nontoxic ZnSe/ZnS core/shell quantum dots (QDs) as the emitter. The device exhibits moderate turn-on voltage (4.0 V) and color-saturated deep blue emission with a narrow full width at half maximum of ∼15 nm and emission peak at 441 nm. Their maximum luminance and current efficiency reach 1170 cd/m2 and 0.51 cd/A, respectively. The high performances are achieved through a ZnO nanoparticle based electron-transporting layer due to efficient electron injection into the ZnSe/ZnS QDs. Energy transfer processes between the ZnSe/ZnS QDs and hole-transporting materials are studied by time-resolved photoluminescence spectroscopy to understand the EL mechanism of the devices. These results provide a new guide for the fabrication of efficient deep-blue quantum dot light-emitting diodes and the realization of QD-based lighting sources and full-color panel displays.

Efficient Quantum Dot Light-Emitting Diodes by Controlling the Carrier Accumulation and Exciton Formation

The performances and spectroscopic properties of CdSe/ZnS quantum dot light-emitting diodes (QD-LEDs) with inserting a thickness-varied 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) layer between the QD emission layer and 4,4-N,N-dicarbazole-biphenyl (CBP) hole transport layer (HTL) are studied. The significant enhancement in device peak efficiency is demonstrated for the device with a 3.5 nm TPBi interlayer. The photoluminescence lifetimes of excitons formed within QDs in different devices are also measured to understand the influence of electric field on the QD emission dynamics process and device efficiency. All the excitons on QDs at different devices have nearly the same lifetime even though at different bias. The improvement of device performance is attributed to the separation of charge carrier accumulation interface from the exciton formation zone, which suppresses exciton quenching caused by accumulated carriers.

Temperature-dependent photoluminescence of inorganic perovskite nanocrystal films

Temperature-dependent photoluminescence (PL) properties of inorganic perovskite CsPbBr3 nanocrystal (NC) films were studied by using steady-state and time-resolved PL spectroscopy. The closely packed solid films were obtained by dropping NC solution on silicon substrates. It was found that the PL intensities of the NC films, which are dependent on the size of NCs, slightly decreased with increasing temperature to 300 K, while the PL intensities dropped rapidly with increasing temperature above 300 K and were nearly quenched at 360 K. Further the corresponding average PL lifetimes increased significantly with increasing temperature below about 320 K and then significantly became shorter. The PL quenching mechanisms were demonstrated through heating and cooling experiments. The experimental results indicated inorganic perovskite NCs exhibited a thermal PL quenching in the temperature range of 80–300 K and a thermal degradation at temperatures above 300 K. The linewidths, peak energies, and lifetimes of PL emissions for the NC films as a function of temperature were discussed in detail.

Plasmonic Ag@oxide nanoprisms for enhanced performance of organic solar cells.

Localized surface plasmon resonance (LSPR), light scattering, and lowering the series resistance of noble metal nanoparticles (NPs) provide positive effect on the performance of photovoltaic device. However, the exciton recombination on the noble metal NPs accompanying above influences will deteriorate the performance of device. In this report, surface-modified Ag@oxide (TiO2 or SiO2 ) nanoprisms with 1-2 nm shell thickness are developed. The thin film composed of P3HT/Ag@oxides and P3HT:PCBM/Ag@oxides is investigated by absorption, photoluminescence (PL), and transient absorption spectroscopy. The results show a significant absorption, PL enhancement, and long-lived photogenerated polaron in the P3HT/Ag@TiO2 film, indicating the increase of photogenerated exciton population by LSPR of Ag nanoprisms. In the case of P3HT/Ag nanoprisms, partial PL quench and relatively short-lived photogenerated polaron are observed. That indicates that the oxides layer can effectively avoid the exciton recombination. When the Ag@oxide nanoprisms are introduced into the active layer of P3HT:PCBM photovoltaic devices, about 31% of power conversion efficiency enhancement is obtained relative to the reference cell. All these results indicate that Ag@oxides can enhance the performance of the cell, at the same time the ultrathin oxide shell prevents from the exciton recombination.

Doping Lanthanide into Perovskite Nanocrystals: Highly Improved and Expanded Optical Properties

Cesium lead halide (CsPbX3) perovskite nanocrystals (NCs) have demonstrated extremely excellent optical properties and great application potentials in various optoelectronic devices. However, because of the anion exchange, it is difficult to achieve white-light and multicolor emission for practical applications. Herein, we present the successful doping of various lanthanide ions (Ce3+, Sm3+, Eu3+, Tb3+, Dy3+, Er3+, and Yb3+) into the lattices of CsPbCl3 perovskite NCs through a modified hot-injection method. For the lanthanide ions doped perovskite NCs, high photoluminescence quantum yield (QY) and stable and widely tunable multicolor emissions spanning from visible to near-infrared (NIR) regions are successfully obtained. This work indicates that the doped perovskite NCs will inherit most of the unique optical properties of lanthanide ions and deliver them to the perovskite NC host, thus endowing the family of perovskite materials with excellent optical, electric, or magnetic properties.

The work mechanism and sub-bandgap-voltage electroluminescence in inverted quantum dot light-emitting diodes.

Through introducing a probe layer of bis(4,6-difluorophenylpyridinato-N,C2)picolinatoiridium (FIrpic) between QD emission layer and 4, 4-N, N- dicarbazole-biphenyl (CBP) hole transport layer, we successfully demonstrate that the electroluminescence (EL) mechanism of the inverted quantum dot light-emitting diodes (QD-LEDs) with a ZnO nanoparticle electron injection/transport layer should be direct charge-injection from charge transport layers into the QDs. Further, the EL from QD-LEDs at sub-bandgap drive voltages is achieved, which is in contrast to the general device in which the turn-on voltage is generally equal to or greater than its bandgap voltage (the bandgap energy divided by the electron charge). This sub-bandgap EL is attributed to the Auger-assisted energy up-conversion hole-injection process at the QDs/organic interface. The high energy holes induced by Auger-assisted processes can be injected into the QDs at sub-bandgap applied voltages. These results are of important significance to deeply understand the EL mechanism in QD-LEDs and to further improve device performance.

Efficient white light emitting diodes based on Cu-doped ZnInS/ZnS core/shell quantum dots

We report the fabrication of efficient white light-emitting diodes (WLEDs) based on Cu : ZnInS/ZnS core/shell quantum dots (QDs) with super large Stokes shifts. The composition-controllable Cu : ZnInS/ZnS QDs with a tunable emission from deep red to green were prepared by a one-pot noninjection synthetic approach. The high performance Cu : ZnInS QD-WLEDs with the colour rendering index up to 96, luminous efficacy of 70-78 lm W(-1), and colour temperature of 3800-5760 K were successfully fabricated by integration of red and green Cu-doped QDs. Negligible energy transfer between Cu-doped QDs was clearly found by measuring the photoluminescence lifetimes of the QDs, consistent with the small spectral overlap between QD emission and absorption. The experimental results indicated low toxic Cu : ZnInS/ZnS QDs could be suitable for solid state lighting.