Per Eklund

Transparent Conductive Two-Dimensional Titanium Carbide Epitaxial Thin Films

Since the discovery of graphene, the quest for two-dimensional (2D) materials has intensified greatly. Recently, a new family of 2D transition metal carbides and carbonitrides (MXenes) was discovered that is both conducting and hydrophilic, an uncommon combination. To date MXenes have been produced as powders, flakes, and colloidal solutions. Herein, we report on the fabrication of ∼1 × 1 cm2 Ti3C2 films by selective etching of Al, from sputter-deposited epitaxial Ti3AlC2 films, in aqueous HF or NH4HF2. Films that were about 19 nm thick, etched with NH4HF2, transmit ∼90% of the light in the visible-to-infrared range and exhibit metallic conductivity down to ∼100 K. Below 100 K, the films’ resistivity increases with decreasing temperature and they exhibit negative magnetoresistance—both observations consistent with a weak localization phenomenon characteristic of many 2D defective solids. This advance opens the door for the use of MXenes in electronic, photonic, and sensing applications.

Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering

We have grown single-crystal thin films of Ti2GeC and Ti3GeC2 and a new phase Ti4GeC3, as well as two new intergrown MAX-structures, Ti5Ge2C3 and Ti7Ge2C5. Epitaxial films were grown on Al2O3(0001) ...

Structural, electrical, and mechanical properties of nc-TiC∕a-SiC nanocomposite thin films

We have synthesized Ti–Si–C nanocomposite thin films by dc magnetron sputtering from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at temperatures from roo ...

Experimental and theoretical characterization of ordered MAX phases Mo2TiAlC2 and Mo2Ti2AlC3

Herein, we report on the phase stabilities and crystal structures of two newly discovered ordered, quaternary MAX phases—Mo2TiAlC2 and Mo2Ti2AlC3—synthesized by mixing and heating different elemental powder mixtures of mMo:(3-m)Ti:1.1Al:2C with 1.5 ≤ m ≤ 2.2 and 2Mo: 2Ti:1.1Al:2.7C to 1600 °C for 4 h under Ar flow. In general, for m ≥ 2 an ordered 312 phase, (Mo2Ti)AlC2, was the majority phase; for m < 2, an ordered 413 phase (Mo2Ti2)AlC3, was the major product. The actual chemistries determined from X-ray photoelectron spectroscopy (XPS) are Mo2TiAlC1.7 and Mo2Ti1.9Al0.9C2.5, respectively. High resolution scanning transmission microscopy, XPS and Rietveld analysis of powder X-ray diffraction confirmed the general ordered stacking sequence to be Mo-Ti-Mo-Al-Mo-Ti-Mo for Mo2TiAlC2 and Mo-Ti-Ti-Mo-Al-Mo-Ti-Ti-Mo for Mo2Ti2AlC3, with the carbon atoms occupying the octahedral sites between the transition metal layers. Consistent with the experimental results, the theoretical calculations clearly show that M l...

A Two-Dimensional Zirconium Carbide by Selective Etching of Al3C3 from Nanolaminated Zr3Al3C5

The room-temperature synthesis of a new two-dimensional (2D) zirconium-containing carbide, Zr3C2T(z) MXene is presented. In contrast to traditional preparation of MXene, the layered ternary Zr3Al3C5 material instead of MAX phases is used as source under hydrofluoric acid treatment. The structural, mechanical, and electronic properties of the synthesized 2D carbide are investigated, combined with first-principles density functional calculations. A comparative study on the structrual stability of our obtained 2D Zr3C2T(z) and Ti3C2T(z) MXenes at elevated temperatures is performed. The obtained 2D Zr3C2T(z) exhibits relatively better ability to maintain 2D nature and strucural integrity compared to Ti-based Mxene. The difference in structural stability under high temperature condition is explained by a theoretical investigation on binding energy.

Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

Epitaxial Ti3SiC2 (0001) thin film contacts were grown on doped 4H-SiC (0001) using magnetron sputtering in an ultra high vacuum system. The specific contact resistance was investigated using linea ...

Magnetron sputtering of Ti3SiC2 thin films from a compound target

In this Thesis, I have investigated multifunctional nanostructured Ti-Si-C thin films synthesized by magnetron sputtering in the substrate-temperature range from room temperature to 900 °C. The studies cover high-temperature growth of Ti3SiC2 and Ti4SiC3, low-temperature growth of Ti-Si-C nanocomposites, and Ti-Si-C-based multi¬layers, as well as their electrical, mechanical, and thermal-stability properties. Ti3SiC2 and Ti4SiC3 were synthesized homoepitaxially onto bulk Ti3SiC2 from individual sputtering targets and heteroepitaxially onto Al2O3(0001) substrates from a Ti3SiC2 target at substrate temperatures of 700 – 900 °C. In the latter case, the film composition exhibits excess C compared to the nominal target composition due to differences between species in angular and energy distribution and gas-phase scattering processes. Ti buffering is shown to compensate for this excess C. The electrical-resistivity values of Ti3SiC2 and Ti4SiC3 thin films were measured to 21-32 uOhmcm and ~50 uOhmcm, respectively. The good conductivity is because the presence of Si layers enhances the relative strength of the metallic Ti-Ti bonds. The higher density of Si layers in Ti3SiC2 than in Ti4SiC3 explains why Ti3SiC2 is the better conductor of the two. Ti3SiC2 thin films are shown to be thermally stable up to 1000 – 1100 °C. Annealing at higher temperature results in decomposition of Ti3SiC2 by Si out-diffusion to the surface with subsequent evaporation. Above 1200 °C, TiCx layers recrystallized. Nanocomposites comprising nanocrystalline (nc-)TiC in an amorphous (a-)SiC matrix phase were deposited at substrate temperatures in the range 100 – 300 °C. These nc-TiC/a-SiC films exhibit low contact resistance in electrical contacts and a ductile deformation behavior due to rotation and gliding of nc-TiC grains in the matrix. The ductile mechanical properties of nc-TiC/a-SiC are actually more similar to those of Ti3SiC2, which is very ductile due to kinking and delamination, than to those of the brittle TiC. Epitaxial TiC/SiC multilayers deposited at ~550 °C were shown to contain cubic SiC layers up to a thickness of ~2 nm. Thicker SiC layers gives a-SiC due to the corresponding increase in interfacial strain energy leading to loss of coherent-layer growth. Nanoindentation of epitaxial Ti3SiC2/TiC0.67 nanolaminates showed inhibition of kink-band formation in Ti3SiC2, as the lamination with the less ductile TiC effectively hindered this mechanism.

Synthesis and Electrochemical Properties of Two-Dimensional Hafnium Carbide

We demonstrate fabrication of a two-dimensional Hf-containing MXene, Hf3C2Tz, by selective etching of a layered parent Hf3[Al(Si)]4C6 compound. A substitutional solution of Si on Al sites effectively weakened the interfacial adhesion between Hf-C and Al(Si)-C sublayers within the unit cell of the parent compound, facilitating the subsequent selective etching. The underlying mechanism of the Si-alloying-facilitated etching process is thoroughly studied by first-principles density functional calculations. The result showed that more valence electrons of Si than Al weaken the adhesive energy of the etching interface. The MXenes were determined to be flexible and conductive. Moreover, this 2D Hf-containing MXene material showed reversible volumetric capacities of 1567 and 504 mAh cm-3 for lithium and sodium ions batteries, respectively, at a current density of 200 mAg-1 after 200 cycles. Thus, Hf3C2Tz MXenes with a 2D structure are candidate anode materials for metal-ion intercalation, especially for applications where size matters.

Novel ceramic Ti-Si-C nanocomposite coatings for electrical contact applications

Abstract Nanocomposite coatings consisting of TiC nanocrystallites embedded in an amorphous SiC matrix (nc-TiC/a-SiC) have been produced using magnetron sputtering from a Ti3SiC2 target onto electrical contact components at a temperature below 300°C. The as deposited nanocomposites were employed as electrical contact materials. Results show that when contacted against Ag, they exhibit somewhat higher contact resistance than Ag against Ag, while preventing welding and potentially minimising wear. This is due to an adequate resistivity coupled with beneficial mechanical properties. The design of the nanoscale materials produced coatings with a relatively high nanoindentation hardness of 20 GPa, but with a ductile deformation behaviour. The ductility is explained by rotation and gliding of nc-TiC grains in the matrix. Therefore, the nanocomposite material can minimise problems with wear and welding while retaining low contact resistance. Consequently, this type of novel coating with appropriate mechanical properties offers a solution to problems in many electrical applications. Moreover, the use of physically vapour deposited coatings is promoted in some previously relatively unexploited areas of electrical contact applications.

Ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

Thermally stable, stoichiometric, cubic yttria-stabilized zirconia (YSZ) thin-film electrolytes have been synthesized by reactive pulsed dc magnetron sputtering from a Zr-Y (80/20 at. %) alloy targ ...