Petr Malinský

Early stages of growth of gold layers sputter deposited on glass and silicon substrates

Extremely thin gold layers were sputter deposited on glass and silicon substrates, and their thickness and morphology were studied by Rutherford backscattering (RBS) and atomic force microscopy (AFM) methods. The deposited layers change from discontinuous to continuous ones for longer deposition times. While the deposition rate on the silicon substrate is constant, nearly independent on the layer thickness, the rate on the glass substrate increases with increasing layer thickness. The observed dependence can be explained by a simple kinetic model, taking into account different sticking probabilities of gold atoms on a bare glass substrate and regions with gold coverage. Detailed analysis of the shape of the RBS gold signal shows that in the initial stages of the deposition, the gold layers on the glass substrate consist of gold islands with significantly different thicknesses. These findings were confirmed by AFM measurements, too. Gold coverage of the silicon substrate is rather homogeneous, consisting of tiny gold grains, but a pronounced worm-like structure is formed for the layer thickness at electrical continuity threshold. On the glass substrate, the gold clusters of different sizes are clearly observed. For later deposition stages, a clear tendency of the gold atoms to aggregate into larger clusters of approximately the same size is observed. At later deposition stages, gold clusters of up to 100 nm in diameter are formed.

Gold nanolayer and nanocluster coatings induced by heat treatment and evaporation technique

The paper is focused on the preparation and surface characterization of gold coatings and nanostructures deposited on glass substrate. Different approaches for the layer preparation were applied. The gold was deposited on the glass with (i) room temperature, (ii) glass heated to 300°C, and (iii) the room temperature-deposited glass which was consequently annealed to 300°C. The sheet resistance and concentration of free carriers were determined by the van der Pauw method. Surface morphology was characterized using an atomic force microscopy. The optical properties of gold nanostructures were measured by UV–vis spectroscopy. The evaporation technique combined with simultaneous heating of the glass leads to change of the sheet resistance, surface roughness, and optical properties of gold nanostructures. The electrically continuous layers are formed for significantly higher thickness (18 nm), if the substrate is heated during evaporation process. The annealing process influences both the structure and optical properties of gold nanostructures. The elevated temperature of glass during evaporation amplifies the peak of plasmon resonance in the structures, the surface morphology being significantly altered.

A novel method for biopolymer surface nanostructuring by platinum deposition and subsequent thermal annealing

A novel procedure for biopolymer surface nanostructuring with defined surface roughness and pattern dimension is presented. The surface properties of sputtered platinum layers on the biocompatible polymer poly(l-lactic acid) (PLLA) are presented. The influence of thermal treatment on surface morphology and electrical resistance and Pt distribution in ca. 100 nm of altered surface is described. The thickness, roughness and morphology of Pt structures were determined by atomic force microscopy. Surface sheet resistance was studied by a two-point technique. It was the sequence of Pt layer sputtering followed by thermal treatment that dramatically changed the structure of the PLLA’s surface. Depending on the Pt thickness, the ripple-like and worm-like patterns appeared on the surface for thinner and thicker Pt layers, respectively. Electrokinetic analysis confirmed the Pt coverage of PLLA and the slightly different behaviour of non-annealed and annealed surfaces. The amount and distribution of platinum on the PLLA is significantly altered by thermal annealing.

Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5 × 5 mm2 were positioned in the classical straws and within an estimated accuracy of 10−6 emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.

Material Analyses and Modification on the Tandetron Accelerator

The Tandetron 4130MC accelerator of the Nuclear Physics Institute offers new possibilities of analyses and modification of materials by ion beams. The RBS, ERDA‐TOF, RBS‐channeling and PIXE methods are briefly described. Examples of analyses of materials for photonics and spintronics are presented. Also the results of investigation of polymers modified by ion implantation, which may find application in medicine, are presented.

Electrical properties of SmB6 thin films prepared by pulsed laser deposition from a stoichiometric SmB6 target

Abstract Possible existence of topologically protected surface in samarium hexaboride has created a strong need for investigations allowing to distinguish between properties coming from the surface states and those originating in the (remaining) bulk. Studies of SmB6 thin films represent a favorable approach allowing well defined variations of the bulk volume that is not affected by surface states. Moreover, thin films are highly desirable for potential technology applications. However, the growth of SmB6 thin films is accompanied by technology problems, which are typically associated with maintaining the correct stoichiometry of samarium and boron. Here we present feasibility study of SmB6 thin film synthesis by pulsed laser deposition (PLD) from a single stoichiometric SmB6 target. As proved by Rutherford Backscattering Spectrometry (RBS), we succeeded to obtain the same ratio of samarium and boron in the films as that in the target. Thin films revealing characteristic electrical properties of (crystalline) SmB6 were successfully deposited on MgO, sapphire, and glass-ceramics substrates, when the substrates were kept at temperature of 600 °C during the deposition. Performed electrical resistance studies have revealed that bulk properties of the films are only slightly affected by the substrate. Our results indicate that PLD is a suitable method for complex and intensive research of SmB6 and similar systems.

Comparison of SIMS and RBS for depth profiling of silica glasses implanted with metal ions

Ion implantation of metal ions, followed by annealing, can be used for the formation of buried layers of metal nanoparticles in glasses. Thus, photonic structures with nonlinear optical properties can be formed. In this study, three samples of silica glasses were implanted with Cu+, Ag+, or Au+ ions under the same conditions (energy 330 keV and fluence 1 × 1016 ions/cm2), and compared to three identical silica glass samples that were subsequently coimplanted with oxygen at the same depth. All the implanted glasses were annealed at 600 °C for 1 h, which leads to the formation of metal nanoparticles. The depth profiles of Cu, Ag, and Au were measured by Rutherford backscattering and by secondary ion mass spectrometry and the results are compared and discussed.

Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing

We present a fundamental study of the erbium luminescence centres in single- and nano-crystalline (NCD) diamonds. Both diamond forms were doped with Er using ion implantation with the energy of 190 keV at fluences up to 5 × 1015 ions·cm−2, followed by annealing at controllable temperature in Ar atmosphere or vacuum to enhance the near infrared photoluminescence. The Rutherford Backscattering Spectrometry showed that Er concentration maximum determined for NCD films is slightly shifted to the depth with respect to the Stopping and Range of Ions in Matter simulation. The number of the displaced atoms per depth slightly increased with the fluence, but in fact the maximum reached the fully disordered target even in the lowest ion fluence used. The post-implantation annealing at 800 °C in vacuum had a further beneficial effect on erbium luminescence intensity at around 1.5 μm, especially for the Er-doped NCD films, which contain a higher amount of grain boundaries than single-crystalline diamond.