Phil Rosenow

Configuration dependence of band-gap narrowing and localization in dilute GaAs 1 − x Bi x alloys

Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap

Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates

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Electron–Vibron Coupling at Metal–Organic Interfaces from Theory and Experiment

at low Bi concentrations

Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches

(\ensuremath{\le}2%)

Surface Chemistry of tert-Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth.

, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of

An ab initio based approach to optical properties of semiconductor heterostructures

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Interfacial Properties and Growth Dynamics of Semiconductor Interfaces

has been found to be linear at low concentrations

Growth, Structural and Electronic Properties of Functional Semiconductors Studied by First Principles

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A quantum chemical study on gas phase decomposition pathways of triethylgallane (TEG, Ga(C2H5)3) and tert-butylphosphine (TBP, PH2(t-C4H9)) under MOVPE conditions.

and dominated by a valence band defect level anticrossing between As and Bi occupied

Molecular structure and vibrations of NTCDA monolayers on Ag(111) from density-functional theory and infrared absorption spectroscopy.

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