Philip Kim

Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics

Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials with potential applications in electronics. However, exploiting the intrinsic characteristics of graphene devices has been problematic due to impurities and disorder in the surrounding dielectric and graphene/dielectric interfaces. Recent advancements in fabricating graphene heterostructures by alternately layering graphene with crystalline hexagonal boron nitride (hBN), its insulating isomorph, have led to an order of magnitude improvement in graphene device quality. Here, recent developments in graphene devices utilizing boron-nitride dielectrics are reviewed. Field-effect transistor (FET) characteristics of these systems at high bias are examined. Additionally, existing challenges in material synthesis and fabrication and the potential of graphene/BN heterostructures for novel electronic applications are discussed.

Spatially Resolved Electric and Thermal Properties Study of Graphene Field Effect Devices

We present spatially electric and thermal characterization of graphene field effect transistor (FET) device. Using scanning Kelvin probe microcopy and scanning thermal microscopy, we could scrutinize the work‐function and temperature distribution of graphene FET and/or graphene nanoribbon structures.