Philippe Lefaucheux

Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

The evolution of silicon cryoetching is reported in this topical review, from its very first introduction by a Japanese team to todays advanced technologies. The main advances in terms of the performance and comprehension of the mechanisms are chronologically presented. After presenting the principle of silicon cryoetching, the main defects encountered in cryoetching (such as undercut, bowing and crystal orientation dependent etching) are presented and discussed. Mechanisms involved in SiOxFy passivation layer growth in standard cryoetching are investigated through several in situ characterization experiments. The STiGer process and alternative cryoetching processes for high-aspect-ratio structures are also proposed to enhance the process robustness. The over-passivation regime, which can provide self-organized columnar microstructures, is presented and discussed. Finally, advanced technologies, such as the cryoetching of sub-20 nm features and porous OSG low-k cryoetching, are described.

Passivation mechanisms in cryogenic SF6/O2 etching process

Passivation mechanisms of Si trenches involved in SF6/O2 cryogenic plasma etching were investigated in order to better control the process and avoid defects. Trench sidewalls and profiles were ex situ characterized geometrically by SEM and chemically by spatially resolved XPS experiments. These measurements reveal that the passivating layer is removed during the increase of the wafer chuck temperature leading to a very clean surface of the sidewalls after processing. Nearly no SiO2 formation on the sidewalls was observed after the very low temperature etching (−100 °C). A two-step process was defined to rebuild the passivating layer after its destruction and continue the trench etching. The necessary conditions for properly rebuilding the passivating layer give precious information about its chemical composition. These experiments clearly show that sulfur is not a necessary element to form an efficient passivating layer.

SiOxFy passivation layer in silicon cryoetching

The SiOxFy passivation layer created on structure sidewalls during silicon cryoetching is investigated. This SiOxFy passivation layer formation strongly depends on O2 content, temperature and bias. It is a fragile layer, which mostly disappears when the wafer is warmed up to ambient temperature. A mass spectrometer was used to analyze the desorbed species during the warm-up and using this instrument allowed us to find a large signal increase in SiF3+ between −80°C and −50°C. SiF4 etching products can participate in the formation of the passivation layer as it is shown by a series of test experiments. SiF4∕O2 plasmas are used to form a thin SiOxFy layer on a cooled silicon wafer. Thickness and optical index of this thin film can be determined by in situ spectroscopic ellipsometry. It is shown that the passivation layer spontaneously desorbs when the silicon wafer temperature increases in good agreement with the mass spectrometry analysis. Two physical mechanisms are proposed to explain the SiOxFy passivati...

Silicon columnar microstructures induced by an SF6/O2 plasma

An inductively coupled SF6/O2 plasma is used to form a columnar microstructure (CMS) on silicon samples cooled at very low temperature (~ −100u2009°C). The formation of this CMS is studied as a function of bias voltage, temperature, RF power and gas pressure. The characteristic mean diameter and mean height of the microstructure are evaluated by image processing tools from SEM micrographs. A crystallographic effect is also observed at very low temperature, which induces a needle-shaped structure. A physical mechanism is proposed to explain the formation of this CMS.

A gliding discharge applied to H2S destruction

The destruction of foul smelling gases is an important subject involving a number of industrial applications. Increased interest is being devoted to technologies based on the properties of cold plasmas, which are the subject of a large body of research. Among all possible techniques, the sliding discharge is one of the simplest to utilize. We present a study of the destruction of H2S diluted in air by this type of discharge. We first describe the electric power supply, its characteristics and the design of the reactor. The properties of the discharge and its changes are then described using measurements of voltage, current, and different characteristic parameters: temperatures, velocities, and length of the discharge. After describing the instrumentation used for chemical diagnoses, the main experimental results are presented. They show the changes in the conversion rate as a function of the flow rate of the gas to treat and the dimensions of the reaction chamber, enabling a model of discharge changes to ...

H2S destruction in 50 Hz and 25 kHz gliding arc reactors

The destruction of foul smelling gases is an important subject involving a number of industrial applications. Increased interest is being devoted to technologies based on the properties of cold plasmas, which are the subject of a large body of research. Among all possible techniques, the sliding discharge is one of the simplest to utilize. We present a study of the destruction of H2S diluted in air by this type of discharge at two frequencies; 50 Hz and 25 kHz. We first describe the electric power supplies, their characteristics, and the design of the reactor. The properties of the discharge and its changes are then described at the above two frequencies. We performed measurements of voltage, current, velocities, and length of the discharge. After describing the instrumentation used for chemical diagnoses, the main experimental results are presented. They show the changes in the conversion rate as a function of the flow rate, of the gas to treat and of the frequency. It was thus possible to determine how ...

Deep GaN etching by inductively coupled plasma and induced surface defects

GaN etching was studied in Cl2/Ar plasmas as a function of process parameters. In addition, for a better understanding of the etching mechanisms, Langmuir probe measurements and optical emission spectroscopy were carried out. Etch rate was found to depend strongly on bias power. After optimization, an etch rate greater than 1000 nm/min was achieved. A second part of this work is dedicated to the etched surface defects. An original method to estimate GaN dislocation density and to localize nanopipes in the material is presented. Columnar defects could also appear with impurities in the etching reactor. The authors also present a possible formation mechanism of those columnar defects.

Oxidation threshold in silicon etching at cryogenic temperatures

In silicon etching in SF6∕O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at lower oxygen proportions if the substrate is cooled down to cryogenic temperatures. In this article, we present a mass spectrometry study of this oxidation threshold in different experimental conditions (temperature, source rf power, self-bias) on bare silicon wafers. The presence of the threshold is clearly evident in the signals of many ions, for example, SiF3+, F+, and SOF2+. This helps us to determine the main reactions which can occur in the SF6∕O2 plasma in our experimental conditions. This threshold appears for higher oxygen proportions when either the source power or the chuck self-bias is increased. The ion bombardment transfers energy to the surface and makes the film desorb. A model, describing the oxygen coverage as a function of the parameters mentioned above, is proposed to interpret these result...

Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma

Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those obtained when only few reactions occur at the surface to show the part of chemical reactions. At 800 W, the measured energy flux due to chemical reactions is estimated at about 7u2002Wu2009cm−2 against 0.4u2002Wu2009cm−2 for ion bombardment and other contributions. Time evolution of the HFM signal is also studied. The molar enthalpy of the reaction giving SiF4 molecules was evaluated and is consistent with values given in literature.

Effect of limiting the cathode surface on direct current microhollow cathode discharge in helium

This paper describes how to light several microdischarges in parallel without having to individually ballast each one. The V-I curve of a microhollow cathode discharge is characterized by a constant voltage in the normal glow regime because the plasma is able to spread over the cathode surface area to provide the additional secondary electrons needed. If one limits the cathode surface area, the V-I characteristic can be forced into an abnormal glow regime in which the operating voltage must increase with the current. It is then possible to light several microdischarges mounted in parallel without ballasting them individually.