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Dive into the research topics where Philippe M. Fauchet is active.

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Featured researches published by Philippe M. Fauchet.


Proceedings of the National Academy of Sciences of the United States of America | 2013

High-performance, low-voltage electroosmotic pumps with molecularly thin silicon nanomembranes

Jessica L. Snyder; Jirachai Getpreecharsawas; David Z. Fang; Thomas R. Gaborski; Christopher C. Striemer; Philippe M. Fauchet; David A. Borkholder; James L. McGrath

Significance Electroosmotic pumps (EOPs) are a class of pumps in which fluid is driven through a capillary or porous media within an electric field. Current research on EOPs concerns the development of new materials in which high electroosmotic flow rates can be achieved for low voltages. Such pumps could be used for portable microfluidic devices. Porous nanocrystalline silicon (pnc-Si) is a material that is formed into a 15-nm-thick nanomembrane. pnc-Si membranes are shown here to have high electroosmotic flow rates at low applied voltages due to the high electric fields achieved over the ultrathin membrane. A prototype EOP was designed using pnc-Si membranes and shown to pressurize fluid through capillary tubing at voltages as low as 250 mV. We have developed electroosmotic pumps (EOPs) fabricated from 15-nm-thick porous nanocrystalline silicon (pnc-Si) membranes. Ultrathin pnc-Si membranes enable high electroosmotic flow per unit voltage. We demonstrate that electroosmosis theory compares well with the observed pnc-Si flow rates. We attribute the high flow rates to high electrical fields present across the 15-nm span of the membrane. Surface modifications, such as plasma oxidation or silanization, can influence the electroosmotic flow rates through pnc-Si membranes by alteration of the zeta potential of the material. A prototype EOP that uses pnc-Si membranes and Ag/AgCl electrodes was shown to pump microliter per minute-range flow through a 0.5-mm-diameter capillary tubing with as low as 250 mV of applied voltage. This silicon-based platform enables straightforward integration of low-voltage, on-chip EOPs into portable microfluidic devices with low back pressures.


Archive | 2005

Methods of making energy conversion devices with a substantially contiguous depletion regions

Larry L. Gadeken; Wei Sun; Nazir P. Kherani; Philippe M. Fauchet; Karl D. Hirschman


Archive | 2013

Ultrathin porous nanoscale membranes, methods of manufacturing, and uses thereof

Christopher C. Striemer; クリストファー シー. ストリーマー; Philippe M. Fauchet; フィリッペ エム. フォーチェット; James L. McGrath; ジェイムス エル. マクグラス; Thomas R. Gaborski; トーマス アール. ガボルスキ


Archive | 2008

Permeability and Protein Separations: Functional Studies of Porous Nanocrystalline Silicon Membranes

Jessica L. Snyder; Maryna Kavalenka; David Z. Fang; Christopher C. Streimer; Philippe M. Fauchet; James L. McGrath


Archive | 2006

Membranes nanoporeuses ultrafines, procede de fabrication et leurs utilisations

Christopher C. Striemer; Philippe M. Fauchet; James L. McGrath; Thomas R. Gaborski


Archive | 2005

Procedes de fabrication de dispositifs de conversion d'energie presentant des regions de depletion sensiblement contigues

Larry L. Gadeken; Wei Sun; Nazir P. Kherani; Philippe M. Fauchet; Karl D. Hirschman


Archive | 2005

Direct energy conversion devices with substantially contiguous depletion region

Larry L. Gadeken; Wei Sun; Nazir P. Kherani; Philippe M. Fauchet


Archive | 2001

Optical and structural characterization of nanocrystalline Si/SiO2 superlattices

Sebastian K. Zollner; Atul Konkar; Ran Liu; H. Yapa; P. F. Dryer; V. A. Neeley; Qianghua Xie; G. F. Grom; Qiji J. Zhu; Rohini Krishnan; Philippe M. Fauchet; L. Tsybeskov


Archive | 2001

Vertical self organization in magnetron sputtered Si/SiO2 superlattices

Rohini Krishnan; Philippe M. Fauchet; L. Tsybeskov; Jinhao Ruan; Vladimir V. Kuznetsov; J. P. McCaffrey; G. Spoule; J.-M. Baribeau; David J. Lockwood


Archive | 1998

Carrier Transport and Electronic Properties of Nanocrystalline Silicon Superlattices

L. Tsybeskov; G. F. Grom; Karl D. Hirschman; Philippe M. Fauchet; J. P. McCaffrey; J.-M. Baribeau; David J. Lockwood

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L. Tsybeskov

New Jersey Institute of Technology

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Karl D. Hirschman

Rochester Institute of Technology

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Larry L. Gadeken

Rochester Institute of Technology

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Nazir P. Kherani

Rochester Institute of Technology

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G. F. Grom

University of Rochester

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