Philippe Maurel

Metal Organic Molecular Beam Epitaxy Growth of Ga0.5In0.5P/GaAs Quantum Well Structures

High-quality GaAs/GaInP single and multi-quantum-well structures have been grown by metal organic molecular beam epitaxy. Wells as thin as 10 A have been grown exhibiting confinement energies exceeding 310 meV. The influence of growth interruption at both interfaces has been investigated by low-temperature photoluminescence. The critical role of the relative incorporation kinetics of arsenic and phosphorus atoms in determining the nature of the normal and inverted interfaces defining GaAs quantum wells is shown. An excitonic type recombination is evidenced by low-temperature-dependence photoluminescence measurements. Carrier capture is shown to be very efficient, even for the narrowest wells studied.

Influence of rapid thermal annealing on the properties of strained GaInAs quantum well lasers

The influence of rapid thermal annealing on the properties of GaInAs strained quantum well lasers is studied. Photoluminescence performed at 300 and 77 K shows that an optimum is found for annealing at 800°C-10 s. The threshold current density of the laser decreases by a factor of 2 to 3 while its internal quantum efficiency increases from 30% up to 60%. The origin of the non radiative traps involved in the process is discussed.

Structural and Defect Study of Low Temperature INP Grown by Gas Source Molecular Beam Epitaxy

The low temperature growth procedure used in the case of GaAs to introduce high concentrations of deep traps such as arsenic antisite defects has been extended to the growth of InP by gas source molecular beam epitaxy. The low temperature growth of InP induces a strong group V stoechiometric deviation (of the order of +1%). On the other hand, Secondary Ion Mass Spectrometry reveals high levels of hydrogen ranging from 3.10 18 to 3.10 19 cm −3 depending on growth temperature. Undoped layers are found to be resistive without any post annealing. Annealing experiments above 250°C lead to conductive layers suggesting a passivation effect of both shallow donors and acceptors by hydrogen.