Pierre Lefebvre
École Polytechnique Fédérale de Lausanne
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Featured researches published by Pierre Lefebvre.
Semiconductor Science and Technology | 2011
A. Dussaigne; Pierre Corfdir; Jacques Levrat; T. Zhu; D. Martin; Pierre Lefebvre; J-D Ganière; R. Butté; Benoı̂t Deveaud-Plédran; N. Grandjean; Y Arroyo; Pierre Stadelmann
In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been processed using the epitaxial lateral overgrowth technique. As expected for polarization-free heterostructures, the larger the QW width for a given Al content, the narrower the QW emission line. In structures with an Al content set to 5 or 10%, we also observe emission from excitons bound to the intersection of I1-type basal plane stacking faults (BSFs) with the QW. Similarly to what is seen in bulk material, the temperature dependence of BSF-bound QW exciton luminescence reveals intra-BSF localization. A qualitative model evidences the large spatial extension of the wavefunction of these BSF-bound QW excitons, making them extremely sensitive to potential fluctuations located in and away from BSF. Finally, polarization-dependent measurements show a strong emission anisotropy for BSF-bound QW excitons, which is related to their one-dimensional character and that confirms that the intersection between a BSF and a GaN/(Al,Ga)N QW can be described as a quantum wire.
Selected Papers from the Workshop on Frontiers in Electronics 2013 (WOFE-13) | 2015
Steven Albert; Ana Bengoechea-Encabo; Francesca Barbagini; David Lopez-Rormero; M.A. Sanchez-Garcia; E. Calleja; Pierre Lefebvre; Xiang Kong; Uwe Jahn; Achim Trampert; Marcus Müller; F. Bertram; Gordon Schmidt; Peter Veit; Silke Petzold; J. Christen; Philippe De Mierry; J. Zúñiga-Pérez
The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is developed on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.
Physical Review B | 2009
Pierre Corfdir; Pierre Lefebvre; Jelena Ristic; Jean-Daniel Ganière; Benoit Deveaud-Plédran
Physica Status Solidi (c) | 2011
Pierre Corfdir; D. Simeonov; E. Feltin; Jean-François Carlin; Pierre Lefebvre; N. Grandjean; Benoit Deveaud-Plédran; Jean-Daniel Ganière
International Journal of High Speed Electronics and Systems, ISSN 1793-6438, 2014, Vol. 23, No. 3-4 | 2014
Steven Albert; Ana Bengoechea Encabo; Francesca Barbagini; David López Romero; Miguel Angel Sánchez García; Enrique Calleja Pardo; Pierre Lefebvre; Xiang Kong; Uwe Jahn; Achim Trampert; Marcus Müller; F. Bertram; Gordon Schmidt; Peter Veit; Silke Petzold; J. Christen; Philippe De Mierry; Jesús Zuñiga Pérez
Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference | 2015
Fedor Fedichkin; B. Jouault; Maria Vladimirova; Thierry Guillet; Christelle Brimont; Pierre Valvin; Thierry Bretagnon; N. Grandjean; Pierre Lefebvre
International Workshop on Nitride Semiconductors – IWN 2014. | 2014
Pierre Corfdir; Oliver Brandt; Pierre Lefebvre
15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15) | 2014
Fedor Fedichkin; Peristera Andreakou; Pierre Valvin; Maria Vladimirova; Thierry Guillet; Thierry Bretagnon; A. Dussaigne; N. Grandjean; Pierre Lefebvre
E-MRS Fall Meeting | 2013
Pierre Corfdir; A. Dussaigne; Mehran Shahmohammadi; H. Teisseyre; T. Suski; Pierre Lefebvre; I. Grzegory; E. Giraud; R. T. Phillips; N. Grandjean; Benoit Deveaud-Plédran
14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14 | 2013
Andreas Kruse; Pierre Valvin; Maria Vladimirova; Thierry Guillet; Thierry Bretagnon; Peristera Andreakou; N. Grandjean; Pierre Lefebvre