Pra Pietro Binetti

InP/InGaAs photodetector on SOI circuitry

We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

InP-Based Membrane Couplers for Optical Interconnects on Si

We present the design, fabrication, and characterization of a membrane coupler processed on an indium phosphide membrane layer on a silicon-on-insulator wafer, that is used for applications in optical interconnects on silicon. Measured coupler efficiency is 50%. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic integrated circuit processing.

InP-based Membrane Photodetectors for Optical Interconnects to Si

We present the design, fabrication and a characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Waveguide losses in the Si-wiring circuit are below 5 dB/cm. Measured detector responsivity is 0.45 A/W. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

Indium phosphide based membrane photodetector for optical interconnects on silicon

We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

First integrated combiner based on self-switching in quantum dots

We demonstrate all-optical switching in quantum dots (QDs). The switching is studied in an integrated optical combiner circuit. This is a Mach-Zehnder interferometer with an unequal power distribution over the branches. The refractive index is intensity dependent in the branches due to the QDs. Large all-optical nonlinearities are measured. This device is aimed to avoid an unwanted 3-dB loss, fundamental in passive optical splitters.