Pramod Ghimire

Improving Power Converter Reliability: Online Monitoring of High-Power IGBT Modules

The real-time junction temperature monitoring of a high-power insulated-gate bipolar transistor (IGBT) module is important to increase the overall reliability of power converters for industrial applications. This article proposes a new method to measure the on-state collector-emitter voltage of a high-power IGBT module during converter operation, which may play a vital role in improving the reliability of the power converters. The measured voltage is used to estimate the module average junction temperature of the high and low-voltage side of a half-bridge IGBT separately in every fundamental cycle of the current by calibrating them at load current. The measurement is very accurate and also measures the voltage at the middle of a pulse-width modulation (PWM) switching. A major objective is that this method is designed to be implemented in real applications. The performance of this technique is measured in a wind power converter at a low fundamental frequency. To illustrate more, the test method as well as the performance of the measurement circuit are also presented. This measurement is also useful to indicate failure mechanisms such as bond wire lift-off and solder layer degradation. The measurements of and rise in the junction temperature after five million cycles of normal operation of the converter are also presented.

A review on real time physical measurement techniques and their attempt to predict wear-out status of IGBT

Insulated Gate Bipolar Transistors (IGBTs) are key component in power converters. Reliability of power converters depend on wear-out process of power modules. A physical parameter such as the on-state collector-emitter voltage (Vce) shows the status of degradation of the IGBT after a certain cycles of operation. However, the Vce mainly shows the wear-out of bond wire lift-off and solder degradation. The Vce is normally used to estimate the junction temperature in the module. The measurement of Vce is sensitive to the converter power level and fluctuations in the surrounding temperature. In spite of difficulties in the measurement, the offline and online Vce measurement topologies are implemented to study the reliability of the power converters. This paper presents a review in wear-out prediction methods of IGBT power modules and freewheeling diodes based on the real time Vce measurement. The measurement quality and some practical issues of those measurement techniques are discussed. Furthermore, the paper proposes the requirements for the measurement and prognostic approach to determine wear-out status of power modules in field applications. The online Vce measurement for a selected topology is also shown in the paper.

A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules

The conventional RC-lumped thermal networks are widely used to estimate the temperature of power devices, but they lack of accuracy in addressing detailed thermal behaviors/couplings in different locations and layers of the high-power insulated gate bipolar transistor (IGBT) modules. On the other hand, a finite-element (FE)-based simulation is the other method, which is often used to analyze the steady-state thermal distribution of IGBT modules, but it is not possible to be used for a long-term analysis of load profiles of power converter, which is needed for reliability assessments and better thermal design. This paper proposes a novel 3-D RC-lumped thermal network for the high-power IGBT modules. The thermal coupling effects among the chips and among the critical layers are modeled, and boundary conditions, including the cooling conditions, are also considered. It is demonstrated that the proposed thermal model enables both accurate and fast temperature estimation of high-power IGBT modules in the real loading conditions of the converter while maintaining the critical details of the thermal dynamics and thermal distribution. The proposed thermal model is verified by both the FE-based simulation and the experimental results.

An online V ce measurement and temperature estimation method for high power IGBT module in normal PWM operation

An on-state collector-emitter voltage (Vce) measurement and thereby an estimation of average temperature in space for high power IGBT module is presented while power converter is in operation. The proposed measurement circuit is able to measure both high and low side IGBT and anti parallel diode voltages for a half bridge module which are also used to monitor the electrical degradation of the module. The Vce load current is proposed to estimate the variation of average temperature in space at every fundamental cycle of sinusoidal loading current. Initially, the calibration of voltage and junction temperature for load current level is presented and a trend of change in calibration factor for the IGBT is presented. Finally, the variation in temperature for sinusoidal variation of current is presented at initial stage and after an ageing of the IGBT. The measurement technique is simple and easy to implement into a gate driver for field applications.

A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

A basic challenge in the insulated gate bipolar transistor (IGBT) transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of finite-element method (FEM) thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.

Degradation evolution in high power IGBT modules subjected to sinusoidal current load

In this paper the degradation evolution and distribution in high power IGBT module interconnects are investigated. Modules are subjected to advanced active thermal cycling by applying a sinusoidal current load switched by the device. A series of samples subjected to an increasing number of power cycles under conditions resembling real life operation are considered. Under the given load conditions the dominating failure mechanisms are bond wire lift-off and metallization reconstruction. Both failure processes are investigated using micro-sectioning approach and scanning electron microscopy combined with focused ion beam milling. The degradation evolution and distribution are analysed and discussed in relation to load conditions. It is clear that both bond wire lift-off and metallization reconstruction are complicated micro-structural processes affected by numerous stressors. Especially, the fractures causing bond wire lift-off are observed to consist of several sub-phases—delamination, intergranular, and transgranular crack propagations.

Test setup for accelerated test of high power IGBT modules with online monitoring of V ce and V f voltage during converter operation

Several accelerated test methods exist in order to study the failures mechanisms of the high power IGBT modules like temperature cycling test or power cycles based on DC current pulses. The main drawback is that the test conditions do not represent the real performance and stress conditions of the device in real application. The hypothesis is that ageing of power modules closer to real environment including cooling system, full dc-link voltage and continuous PWM operation could lead to more accurate study of failure mechanism. A new type of test setup is proposed, which can create different real load conditions like in the field. Furthermore, collector-emitter voltage (Vce) has been used as indicator of the wear-out of the high power IGBT module. The innovative monitoring system implemented in the test setup is capable of measure the Vce and forward voltage of the antiparallel diode (Vf) during converter operation, which is also demonstrated.

Online chip temperature monitoring using υ ce -load current and IR thermography

This paper presents on-state collector-emitter voltage (υce, on)-load current (Ic) method to monitor chip temperature on power insulated gate bipolar transistor (IGBT) modules in converter operation. The measurement method is also evaluated using infrared (IR) thermography. Temperature dependencies of υce, on at load current is measured and temperature dependency calibration factor is formulated. This method needs a correction to compensate a deviation in the interconnection resistance from homogeneous temperature field in calibration to non-homogeneous field in loading. The correction parameter is obtained from a static calibration and the method is proposed in the paper. Ageing compensation in estimating the temperature is illustrated. The correction parameter is also analysed in finite element model and also investigated experimentally superimposing heat by conducting device for a longer time in the calibration.

Vce-based chip temperature estimation methods for high power IGBT modules during power cycling — A comparison

Temperature estimation is of great importance for performance and reliability of IGBT power modules in converter operation as well as in active power cycling tests. It is common to be estimated through Thermo-Sensitive Electrical Parameters such as the forward voltage drop (Vce) of the chip. This experimental work evaluates the validity and accuracy of two Vce based methods applied on high power IGBT modules during power cycling tests. The first method estimates the chip temperature when low sense current is applied and the second method when normal load current is present. Finally, a correction factor that eliminates the series resistance contribution on the Vce measured at high current, is proposed.

A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations

Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conductivity and heat capacity of materials are temperature dependent. This paper proposes a Cauer thermal model for a 1700 V/1000 A IGBT module with temperature-dependent thermal resistances and thermal capacitances. The temperature effect is investigated by Finite Element Method (FEM) simulation based on the geometry and material information of the IGBT module. The developed model is ready for circuit-level simulation to achieve an improved accuracy of the estimation on IGBT junction temperature and its relevant reliability aspect performance. A test bench is built up with an ultra-fast infrared (IR) camera to validate the proposed thermal impedance model.