Prineha Narang

Theoretical predictions for hot-carrier generation from surface plasmon decay

Decay of surface plasmons to hot carriers finds a wide variety of applications in energy conversion, photocatalysis and photodetection. However, a detailed theoretical description of plasmonic hot-carrier generation in real materials has remained incomplete. Here we report predictions for the prompt distributions of excited ‘hot’ electrons and holes generated by plasmon decay, before inelastic relaxation, using a quantized plasmon model with detailed electronic structure. We find that carrier energy distributions are sensitive to the electronic band structure of the metal: gold and copper produce holes hotter than electrons by 1–2 eV, while silver and aluminium distribute energies more equitably between electrons and holes. Momentum-direction distributions for hot carriers are anisotropic, dominated by the plasmon polarization for aluminium and by the crystal orientation for noble metals. We show that in thin metallic films intraband transitions can alter the carrier distributions, producing hotter electrons in gold, but interband transitions remain dominant.

Nonradiative Plasmon Decay and Hot Carrier Dynamics: Effects of Phonons, Surfaces, and Geometry

The behavior of metals across a broad frequency range from microwave to ultraviolet frequencies is of interest in plasmonics, nanophotonics, and metamaterials. Depending on the frequency, losses of collective excitations in metals can be predominantly classical resistive effects or Landau damping. In this context, we present first-principles calculations that capture all of the significant microscopic mechanisms underlying surface plasmon decay and predict the initial excited carrier distributions so generated. Specifically, we include ab initio predictions of phonon-assisted optical excitations in metals, which are critical to bridging the frequency range between resistive losses at low frequencies and direct interband transitions at high frequencies. In the commonly used plasmonic materials, gold, silver, copper, and aluminum, we find that resistive losses compete with phonon-assisted carrier generation below the interband threshold, but hot carrier generation via direct transitions dominates above threshold. Finally, we predict energy-dependent lifetimes and mean free paths of hot carriers, accounting for electron-electron and electron-phonon scattering, to provide insight toward transport of plasmonically generated carriers at the nanoscale.

Solar energy conversion via hot electron internal photoemission in metallic nanostructures: Efficiency estimates

Collection of hot electrons generated by the efficient absorption of light in metallic nanostructures, in contact with semiconductor substrates can provide a basis for the construction of solar energy-conversion devices. Herein, we evaluate theoretically the energy-conversion efficiency of systems that rely on internal photoemission processes at metal-semiconductor Schottky-barrier diodes. In this theory, the current-voltage characteristics are given by the internal photoemission yield as well as by the thermionic dark current over a varied-energy barrier height. The Fowler model, in all cases, predicts solar energy-conversion efficiencies of <1% for such systems. However, relaxation of the assumptions regarding constraints on the escape cone and momentum conservation at the interface yields solar energy-conversion efficiencies as high as 1%–10%, under some assumed (albeit optimistic) operating conditions. Under these conditions, the energy-conversion efficiency is mainly limited by the thermionic dark current, the distribution of hot electron energies, and hot-electron momentum considerations.

Plasmonic hot carrier dynamics in solid-state and chemical systems for energy conversion

Abstract Surface plasmons provide a pathway to efficiently absorb and confine light in metallic nanostructures, thereby bridging photonics to the nano scale. The decay of surface plasmons generates energetic ‘hot’ carriers, which can drive chemical reactions or be injected into semiconductors for nano-scale photochemical or photovoltaic energy conversion. Novel plasmonic hot carrier devices and architectures continue to be demonstrated, but the complexity of the underlying processes make a complete microscopic understanding of all the mechanisms and design considerations for such devices extremely challenging.Here,we review the theoretical and computational efforts to understand and model plasmonic hot carrier devices.We split the problem into three steps: hot carrier generation, transport and collection, and review theoretical approaches with the appropriate level of detail for each step along with their predictions.We identify the key advances necessary to complete the microscopic mechanistic picture and facilitate the design of the next generation of devices and materials for plasmonic energy conversion.

Plasmonic hot electron transport drives nano-localized chemistry

Nanoscale localization of electromagnetic fields near metallic nanostructures underpins the fundamentals and applications of plasmonics. The unavoidable energy loss from plasmon decay, initially seen as a detriment, has now expanded the scope of plasmonic applications to exploit the generated hot carriers. However, quantitative understanding of the spatial localization of these hot carriers, akin to electromagnetic near-field maps, has been elusive. Here we spatially map hot-electron-driven reduction chemistry with 15 nm resolution as a function of time and electromagnetic field polarization for different plasmonic nanostructures. We combine experiments employing a six-electron photo-recycling process that modify the terminal group of a self-assembled monolayer on plasmonic silver nanoantennas, with theoretical predictions from first-principles calculations of non-equilibrium hot-carrier transport in these systems. The resulting localization of reactive regions, determined by hot-carrier transport from high-field regions, paves the way for improving efficiency in hot-carrier extraction science and nanoscale regio-selective surface chemistry.

Ab initio phonon coupling and optical response of hot electrons in plasmonic metals

Ultrafast laser measurements probe the nonequilibrium dynamics of excited electrons in metals with increasing temporal resolution. Electronic structure calculations can provide a detailed microscopic understanding of hot electron dynamics, but a parameter-free description of pump-probe measurements has not yet been possible, despite intensive research, because of the phenomenological treatment of electron-phonon interactions. We present ab initio predictions of the electron-temperature dependent heat capacities and electron-phonon coupling coefficients of plasmonic metals. We find substantial differences from free-electron and semiempirical estimates, especially in noble metals above transient electron temperatures of 2000 K, because of the previously neglected strong dependence of electron-phonon matrix elements on electron energy. We also present first-principles calculations of the electron-temperature dependent dielectric response of hot electrons in plasmonic metals, including direct interband and phonon-assisted intraband transitions, facilitating complete theoretical predictions of the time-resolved optical probe signatures in ultrafast laser experiments.

Experimental and Ab Initio Ultrafast Carrier Dynamics in Plasmonic Nanoparticles

Ultrafast pump-probe measurements of plasmonic nanostructures probe the nonequilibrium behavior of excited carriers, which involves several competing effects obscured in typical empirical analyses. Here we present pump-probe measurements of plasmonic nanoparticles along with a complete theoretical description based on first-principles calculations of carrier dynamics and optical response, free of any fitting parameters. We account for detailed electronic-structure effects in the density of states, excited carrier distributions, electron-phonon coupling, and dielectric functions that allow us to avoid effective electron temperature approximations. Using this calculation method, we obtain excellent quantitative agreement with spectral and temporal features in transient-absorption measurements. In both our experiments and calculations, we identify the two major contributions of the initial response with distinct signatures: short-lived highly nonthermal excited carriers and longer-lived thermalizing carriers.

Plasmonic tunnel junctions for single-molecule redox chemistry

Nanoparticles attached just above a flat metallic surface can trap optical fields in the nanoscale gap. This enables local spectroscopy of a few molecules within each coupled plasmonic hotspot, with near thousand-fold enhancement of the incident fields. As a result of non-radiative relaxation pathways, the plasmons in such sub-nanometre cavities generate hot charge carriers, which can catalyse chemical reactions or induce redox processes in molecules located within the plasmonic hotspots. Here, surface-enhanced Raman spectroscopy allows us to track these hot-electron-induced chemical reduction processes in a series of different aromatic molecules. We demonstrate that by increasing the tunnelling barrier height and the dephasing strength, a transition from coherent to hopping electron transport occurs, enabling observation of redox processes in real time at the single-molecule level.Plasmons in sub-nm cavities can enable chemical processes within plasmonic hotspots. Here the authors use surface-enhanced Raman spectroscopy to track hot-electron-induced chemical reduction processes in aromatic molecules, thus enabling observation of redox processes at the single-molecule level.

Increased rise time of electron temperature during adiabatic plasmon focusing

Decay of plasmons to hot carriers has recently attracted considerable interest for fundamental studies and applications in quantum plasmonics. Although plasmon-assisted hot carriers in metals have already enabled remarkable physical and chemical phenomena, much remains to be understood to engineer devices. Here, we present an analysis of the spatio-temporal dynamics of hot electrons in an emblematic plasmonic device, the adiabatic nanofocusing surface-plasmon taper. With femtosecond-resolution measurements, we confirm the extraordinary capability of plasmonic tapers to generate hot carriers by slowing down plasmons at the taper apex. The measurements also evidence a substantial increase of the “lifetime” of the electron gas temperature at the apex. This interesting effect is interpreted as resulting from an intricate heat flow at the apex. The ability to harness the “lifetime” of hot-carrier gases with nanoscale circuits may provide a multitude of applications, such as hot-spot management, nonequilibrium hot-carrier generation, sensing, and photovoltaics.Knowledge of the electron-gas dynamics in nanometric hot spots is of importance for hot-carrier technologies. Here Lozan et al. present a theoretical and experimental analysis of the spatio-temporal dynamics of hot electrons in a nano-focusing surface-plasmon polariton taper.

Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices

Harnessing photoexcited “hot” carriers in metallic nanostructures could define a new phase of non-equilibrium optoelectronics for photodetection and photocatalysis. Surface plasmons are considered pivotal for enabling efficient operation of hot carrier devices. Clarifying the fundamental role of plasmon excitation is therefore critical for exploiting their full potential. Here, we measure the internal quantum efficiency in photoexcited gold (Au)–gallium nitride (GaN) Schottky diodes to elucidate and quantify the distinct roles of surface plasmon excitation, hot carrier transport, and carrier injection in device performance. We show that plasmon excitation does not influence the electronic processes occurring within the hot carrier device. Instead, the metal band structure and carrier transport processes dictate the observed hot carrier photocurrent distribution. The excellent agreement with parameter-free calculations indicates that photoexcited electrons generated in ultra-thin Au nanostructures impinge ballistically on the Au–GaN interface, suggesting the possibility for hot carrier collection without substantial energy losses via thermalization.Understanding the role of plasmon excitation is crucial for the realization of hot carrier devices. Here, the authors report internal quantum efficiency measurements in photoexcited gold gallium nitride Schottky diodes and elucidate the roles of surface plasmon excitation, hot carrier transport, and carrier injection in device performance.