Pung-Keun Song

Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor

The barrier characteristics of ZrN films deposited by remote plasma-enhanced atomic layer deposition (PEALD) using Zr[NEt2]4 [tetrakis(diethylamino)zirconium, TDEAZ] and N2 remote plasma have been investigated using various deposition parameters, such as temperature, plasma power, and processing pressure. The optimized processing temperature, plasma power, and pressure were 300 °C, 200 W, and 1 Torr, respectively. ZrN films deposited by remote PEALD using TDEAZ and N2 remote plasma showed a carbon content of about 6 at. %. The resistivity of ZrN films was about 400 µΩcm. The barrier characteristics of Cu/ZrN/Si samples have been investigated by X-ray diffraction (XRD) analysis, Auger electron spectroscopy (AES), and etch-pit test after annealing in vacuum for 1 h in the temperature range of 500–700 °C with an interval of 50 °C. The structure of ZrN films remained amorphous up to 550 °C and crystallized after annealing above 600 °C. The barrier characteristics of ZrN films remained up to 550 °C. ZrN films deposited by remote PEALD are believed to be applicable as barriers for Cu metallization in a semiconductor process.

Characteristics of ITO/Ag/ITO Hybrid Layers Prepared by Magnetron Sputtering for Transparent Film Heaters

Transparent film heaters (TFHs) based on Joule heating are currently an active research area. However, TFHs based on an indium tin oxide (ITO) monolayer have a number of problems. For example, heating is concentrated in only part of the device. Also, heating efficiency is low because it has high sheet resistance (Rs). To address these problems, this study introduced hybrid layers of ITO/Ag/ITO deposited by magnetron sputtering, and the electrical, optical, and thermal properties were estimated for various thicknesses of the metal interlayer. The Rs of ITO(40)/Ag/ITO(40 nm) hybrid TFHs were 5.33, 3.29 and 2.15 Ω/□ for Ag thicknesses of 10, 15, and 20 nm, respectively, while the Rs of an ITO monolayer (95 nm) was 59.58 Ω/□. The maximum temperatures of these hybrid TFHs were 92, 131, and 145°C, respectively, under a voltage of 3 V. And that of the ITO monolayer was only 32°C. For the same total thickness of 95 nm, the heat generation rate (HGR) of the hybrid produced a temperature approximately 100°C higher than the ITO monolayer. It was confirmed that the film with the lowest Rs of the samples had the highest HGR for the same applied voltage. Overall, hybrid layers of ITO/Ag/ITO showed excellent performance for HGR, uniformity of heat distribution, and thermal response time.

Characteristic of the Sputtered CIGS Films in Relation to Heat Treatment Condition

CIGS (Cu-In-Ga-Se) films were deposited on the Mo coated soda lime glass (Mo/SLG) by RF magnetron sputtering using a single sintered target with different chemical compositions. Heat treatment of the CIGS films were carried out under three different conditions, 1step (350 o C for 2 hour and 550 o C for 2 hour) and 2step (350 o C for 1 hour and 550 o C for 1 hour). In the case of CIGS films post-annealed on 2step method, grain size remarkably increased compared to other methods, indicating that chemical composition [Cu/ (Ga+In) = 1] of CIGS films was same as CIGS target. After heat treatment by 2step method, band gap energy of the CIGS film deposited at RF 80 W showed 1.4 eV which is broadly similar to identical band gap energy (1.2 eV) of CIGS film prepared by evaporation method. Therefore, 2step heat treatment method could be expected to low temperature process.

Effect of Annealing on the Electrical Property and Water Permeability of ZTO/GZO Double-layered TCO Films Deposited by DC, RF Magnetron Co-sputtering

ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO (:5.57 wt%) target. These films were post-annealed at temperature of 200, in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore, it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.

Thermoelectric and electrical properties of micro-quantity Sn-doped amorphous indium–zinc oxide thin films

To realize high thermoelectric performance, it was tried to control both high electrical conductivity (σ) and low thermal conductivity (K) for the Sn-doped indium–zinc oxide films prepared by DC magnetron sputtering. The highest power factor was obtained post-annealed at 200 °C due to the highest σ. However, the highest figure of merit was obtained annealed at 500 °C. It could be attributed to both amorphous structure with low K by phonon and the highest Hall mobility. Thermoelectric and electrical properties of the film could be controlled by both heat treatment and Sn doping with high bond enthalpy.

Fabrication and Characteristics of NiO-AZO Thin Films Deposited by Co-sputtering System for GaN LED Transparent Contact Electrode

NiO-AZO films were deposited on glass substrate by DC and RF magnetron co-sputtering system in pure gas without substrate heating during deposition. In order to control the chemical composition of the film, NiO target was supplied with constant RF power of 150 W and AZO target (doped with 2.98 at% aluminum) with DC power varied between 40 W to 80 W. Deposited NiO-AZO films were evaluated by structural and chemical analysis. With introducing AZO, XRD and XPS data reveal that NiO were supplied with more oxygen. these results could be strongly affected by the higher bond enthalpy of NiO compared to ZnO, which makes it possible for NiO to obtain excessive oxygen from ZnO.

Characteristics of ITO:Ce/PET Films for Flexible Display Applications

ITO and ITO:Ce films were deposited by DC magnetron sputtering using an ITO (: 10 wt%) and doped ITO (: 0.5, 3.0, 4.0 and 6.0 wt%) ceramic targets, respectively, on unheated polyethylene terephthalate (PET) substrates. The lowest resistivity was obtained from ITO:Ce film deposited using (3.0 wt%) doped ITO target. On hte other hand, ITO:Ce (0.5wt%) film has the excellent mechanical durability which was evaluated by bending test. This result was attributed to the higher binding energy of compared to and . Therefore, atoms have a small displacement caused by the bombardment of high energy particles, and it attribute to the increase in adhesion caused by decrease in internal stress. The average transmittance of the films was more than 80% in the visible region.

Structure and Photo-catalytic Activity of TiO 2 Films Deposited by Reactive RF Magnetron Sputtering

Titanium dioxide () films were deposited by RF reactive magnetron sputtering on non-alkali glass and single crystal MgO (100) substrate at substrate temperature of . Micro structures of films were investigated by XRD, FE-SEM, and Pole figure measurements. films deposited on glass substrate showed preferred orientation of anatase (101), whereas films deposited on the MgO single crystal substrate showed hetero-epitaxial anatase (100). film grown on MgO substrate showed higher photoctalytic activity than that of glass substrate.

Effects of reactive gas addition on the mechanical property and water permeability of IZO films deposited by DC sputtering for application to flexible OLED

Amorphous IZO films were deposited on PET substrate by DC magnetron sputtering without substrate heating. In order to investigate effect of reactive gas addition on film properties, 0.2-0.4% of or gas was introduced during the deposition. Deposited IZO films were evaluated with mechanical property, electrical property, and water permeability. In the case of gas addition, mechanical property showed clear degradation compared to gas. In the case of gas, water permeability of the IZO film was increased compared to gas which could be attributed to the low adhesion of the film caused by bombardment of high energy negative oxygen ion. As a result, it is confirmed that water permeability of the film could be strongly affected by adhesion of the film.