Qian Lu

Study of Structural and Electrical Properties of Phosphorus-Doped p-Type ZnO Thin Films

Phosphorus-doped ZnO thin films were fabricated by pulsed laser deposition (PLD) with different phosphorus pentoxide (P2O5) concentrations. The as-deposited films were annealed in nitrogen gas at 800 °C for 5 min. Hall effect measurement showed that all the as-deposited films were n-type semiconductors, and confirmed that after annealing treatment, a particular sample could be transformed from an n-type semiconductor into a p-type one. On the basis of the results of X-ray diffraction analysis and X-ray photoelectron spectroscopy, the mechanism of such transformation was discussed.

Effect of PIII on the adhesion behavior of epoxy molding compound-nickel interface

The Cu leadframes pre-plated with nickel-coating were implanted with oxygen ion or nitrogen ion by Plasma Immersion Ion Implantation (PIII) technique. The contact angle measurement showed that ion-implantation lead to an obvious change of wettability. The chemical situation of the leadframe surfaces was analyzed by X-ray Photoelectron Spectroscopy (XPS), while the morphology of the leadframes was observed by scanning electron microscope (SEM). A pull-test was employed to examine the influences of ion-implantation on adhesion between the leadframe surface and molding compound.