Qian Yunsheng

Spectral response variation of a negative-electron-affinity photocathode in the preparation process

In order to research the spectral response variation of a negative electron affinity (NEA) photocathode in the preparation process, we have done two experiments on a transmission-type GaAs photocathode. First, an automatic spectral response recording system is described, which is used to take spectral response curves during the activation procedure of the photocathode. By this system, the spectral response curves of a GaAs:Cs-O photocathode measured in situ are presented. Then, after the cathode is sealed with a microchannel plate and a fluorescence screen into the image tube, we measure the spectral response of the tube by another measurement instrument. By way of comparing and analyzing these curves, we can find the typical variation in spectral-responses. The reasons for the variation are discussed. Based on these curves, spectral matching factors of a GaAs cathode for green vegetation and rough concrete are calculated. The visual ranges of night-vision goggles under specific circumstances are estimated. The results show that the spectral response of the NEA photocathode degraded in the sealing process, especially at long wavelengths. The variation has also influenced the whole performance of the intensifier tube.

In-situ multi-information measurement system for preparing gallium nitride photocathode

We introduce the first domestic in-situ multi-information measurement system for a gallium nitride (GaN) photocathode. This system can successfully fulfill heat cleaning and activation for GaN in an ultrahigh vacuum environment and produce a GaN photocathode with a negative electron affinity (NEA) status. Information including the heat cleaning temperature, vacuum degree, photocurrent, electric current of cesium source, oxygen source, and the most important information about the spectral response, or equivalently, the quantum efficiency (QE) can be obtained during preparation. The preparation of a GaN photocathode with this system indicates that the optimal heating temperature in a vacuum is about 700 ?C. We also develop a method of quickly evaluating the atomically clean surface with the vacuum degree versus wavelength curve to prevent possible secondary contamination when the atomic level cleaning surface is tested with X-ray photoelectron spectroscopy. The photocurrent shows a quick enhancement when the current ratio between the cesium source and oxygen source is 1.025. The spectral response of the GaN photocathode is flat in a wavelength range from 240 nm to 365 nm, and an abrupt decline is observed at 365 nm, which demonstrates that with the in-situ multi-information measurement system the NEA GaN photocathode can be successfully prepared.

Measurement device for noise factor of microchannel plate.

A new method for noise power factor determination of microchannel plates (MCPs) is described in this paper. The new measuring condition and specific measuring instrument are reported. The system consists of a vacuum chamber, an electron gun, a high-voltage supply, an imaging luminance meter, control units, a signal processing circuit, an A/D converter, a D/A converter, a communication unit, an industrial computer, and measurement software. This measuring method fills a void in measuring technology for the noise factor of MCPs, and it can make a scientific assessment of MCP noise characteristics and provide theoretical direction and technology support for the research and development of high-performance low light level (LLL) devices.

The design of low-light night seeing helmet

The article studies the reflection and radiation light spectrum of the object under the night sky light or with the aid of laser calculates and analyzes the spectrum matching factor of typical optoelectronic cathode to the common objects and the effect on the light contrast and give the detailed mechanical design of the low light night observing instrument on helmet.

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.

Electron emitting features and design of thermionic electron area emission sources

In vacuum system, area source electron gun emits electrons to bombard the standard screen. With the first anode and the second anode in different potentials, the images show the features of divergent, uniform, convergence and submerge. Photos, images acquired by brightness meter, and the image gray values are listed in Table 1. By image gray value analysis, it can be seen that in item no. 1, the electrons emitted by area source electron gun are divergent ( not remarkable) ; in no. 2, it is uniform; in no. 3 it is convergence and in no. 4 it is submerged. It is deduced that when the voltage of first anode of electron gun is -4000 V and the second anode voltage is -2000 V, the fluorescence screen receives the uniformly distributed electrons. The difference is less than 5%. Based on this theory, the area source electron gun is developed. The electron gun is placed in a vacuum better than 1 x 10-4Pa to be tested and it is further verified that its electron emission is uniform. The successful development of hot-electron area source provide an effective guarantee for testing the fluorescence screen parameters such as uniformity, brightness, luminous efficiency and afterglow .

The spectral responding characteristic research of the ultraviolet image intensifier

The ultraviolet image intensifier is a kind of vacuum image device with photocathode of Cs2Te (Cesium Tellurium). Its spectral response characteristic curve is measured with a specially designed spectral response measuring system, the quantum efficiency is calculated, the diffusing length of the minor carriers is analyzed. At last some opinions are brought to improve the technique.