Qinglong Li

High-Power Flip-Chip Bonded Photodiode With 110 GHz Bandwidth

Back-illuminated flip-chip-bonded charge-compensated modified uni-traveling-carrier photodiodes (PDs) with bandwidths in excess of 110 GHz are demonstrated. PDs with 10- and 6-μm-diameters deliver RF output power levels as high as 9.6 dBm at 100 GHz and 7.8 dBm at 110 GHz, respectively. An analytical model based on parameter extraction from S-parameter fitting was used to assess the bandwidth limiting factors.

Photonic Generation of High-Power Pulsed Microwave Signals

Photonic generation of high-power pulsed microwave signals is demonstrated using charge-compensated modified unitraveling-carrier photodiodes. The impulse response without RF modulation achieved unsaturated peak voltage of 33.5 V and full-width at half-maximum of 50 ps. The peak power levels for gated modulation at 1 and 10 GHz were 41.5 dBm (14.2 W) and 40 dBm (10 W), respectively.

High-Power Photodiode Integrated With Coplanar Patch Antenna for 60-GHz Applications

A high-power V-band photodiode integrated with a coplanar patch antenna is demonstrated. Modified unitraveling carrier photodiodes with broad 3-dB bandwidth (60 GHz) and high-output power up to 16.7 dBm at 50 GHz were integrated with antennas. The radiation pattern characteristics of the coplanar patch antenna were investigated at V-band. The experimental results agree well with simulations. The effective radiated power of the photodiode-integrated antenna is ~20 dBm at 60 GHz.

Segmented waveguide photodetector with 90% quantum efficiency

We demonstrate a novel InGaAsP/InP segmented waveguide photodetector based on directional couplers. By matching the imaginary parts of the propagation constants of the even and odd modes, we designed a photodetector with 6 elements, each with an absorber volume of only 19 μm3 and a bandwidth of 15 GHz, that has an internal quantum efficiency (QE) of 90% at 1550 nm wavelength corresponding to 1.13 A/W.

High-power photodetector modules for microwave photonic applications

Recently, microwave photonic techniques have emerged to address the challenges that microwave systems face under high-frequency or wideband conditions. To a large extent, the performance of microwave photonic systems depends on the performance of individual optoelectronics devices, such as high power photodiodes. Here, we report a fullypackaged photodetector module based on InGaAs/InP modified uni-traveling carrier (MUTC) photodiode. The modules demonstrated a 3-dB bandwidth up to 50GHz and a record-high output power of 14.0 dBm at 50GHz.

Development of high-power photodiodes for W-band applications

We report high-power MUTC photodiodes with 110 GHz bandwidth. The RF output power levels reach 7.8 dBm at 110 GHz and 9 dBm at 100GHz.