Qingxun Zhao
Hebei University
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Featured researches published by Qingxun Zhao.
EPL | 2010
B.T. Liu; Jianhui Chen; J. Sun; D.Y. Wei; J. H. Chen; Xuechen Li; Fang Bian; Jianxin Guo; Qingxun Zhao; Li Guan; Ying Wang; Qinglin Guo; L.X. Ma
La0.5Sr0.5CoO3 (LSCO) films grown on SrTiO3 substrates, cooled at reduced oxygen pressures, ranging from 8×104 to 1×10−4 Pa, from the depostion temperature, are used as the bottom electrodes of PbZr0.4Ti0.6O3 (PZT) capacitors to study the impact of oxygen stoichiometry of the LSCO bottom electrodes on the structural and physical properties of LSCO/PZT/LSCO capacitors. It is found that the tetragonality, polarization and fatigue-resistance of PZT films decrease with the decrease of the cooling oxygen pressure. Almost 60% polarization degradation occurs for the PZT capacitor with the LSCO bottom electrode cooled in 1×10−4 Pa oxygen up to 1010 switching cycles, indicating that the oxygen vacancy of the bottom electrode can result in fatigue of the LSCO/PZT/LSCO capacitor.
Surface Review and Letters | 2009
Jianxin Guo; Li Guan; Bo Geng; Qiang Li; Qingxun Zhao; Yinglong Wang; Bing Zhu; Baoting Liu
Diffusion of H atom in the Ti(0001) outer-layer and inter-layer surface is studied using density functional theory based on generalized gradient approximation (GGA). The energy barriers for the hydrogen atom diffusion in different interstitial sites at the same layers or between adjacent layers are calculated. It is found that the energy barriers of H atom diffusion in the adjacent interstitial layers are bigger than that in the same interstitial layers. For the diffusion of H atom between adjacent interstitial layers, the diffusion between tetrahedral sites is easier than that between octahedral sites. While for diffusion of H atom between the same interstitial layers, the diffusion between tetrahedral sites is easier than that between tetrahedral and octahedral sites. Moreover, it is found that the most possible inside diffusion from hcp site of a hydrogen atom in the Ti(0001) outer-layer goes through tetrahedral sites.
2013 International Conference on Optical Instruments and Technology: Micro/Nano Photonics and Fabrication | 2013
Hongfang Zheng; Lei Zhang; Yingcai Peng; Qingxun Zhao; Baoting Liu
Al-doped ZnO thin film (AZO) is regarded as a potential candidate to replace the expensive ITO thin film and is the central issue in current research in the field of transparent conductive film because of its properties of high conductivity, low level of pollution, high transmittanceand and low fabrication cost. In this paper, c-axis preferred growth AZO films were fabricated on sapphire (0001) substrate by the pulsed laser deposition at different substrate temperatures (Ts). The scanning electron microscope (SEM), X-ray diffraction (XRD) and the four-point probe (FPP) were used to measure the thin film microstructure and electrical characteristics. SEM results show that the surfaces of all AZO films are very flat and have no droplets on them, expect the film grown at room temperature. The grain sizes of AZO gradually decrease with increse of Ts. X-ray diffraction spectra show that the quality of the crystallization of thin films gradually is improved with increase of Ts. The results measured by FPP show that with increase of temperature, sheet resistance first decreases then increases.
Solid State Communications | 2010
Li Guan; Baoting Liu; Litao Jin; Jianxin Guo; Qingxun Zhao; Yinglong Wang; Guangsheng Fu
Physics Letters A | 2011
Li Guan; Baoting Liu; Qiang Li; Jianxin Guo; Guoqi Jia; Qingxun Zhao; Yinglong Wang; Guangsheng Fu
Physica Status Solidi (a) | 2013
Baoting Liu; Zengwei Peng; Jikui Ma; Jinfeng Wang; Qingxun Zhao; Yinglong Wang
Solid State Communications | 2009
Li Guan; Xu Li; Qiang Li; Jianxin Guo; Litao Jin; Qingxun Zhao; Baoting Liu
Surface and Interface Analysis | 2011
Jianxin Guo; Li Guan; Fang Bian; Qingxun Zhao; Yinglong Wang; Baoting Liu
Applied Surface Science | 2008
Jianxin Guo; Li Guan; Shubiao Wang; Qingxun Zhao; Yinglong Wang; Baoting Liu
Materials Letters | 2008
Qingxun Zhao; F. Bian; Y.L. Zhou; Y.F. Gao; Shaoli Wang; L. Ma; Z. Yan; B.T. Liu