Qinqing Yang

Si1−xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 μm

We report on a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/mu m(2). The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 mu m and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 mu m is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang [Appl. Phys. Lett. 67, 566 (1995)]

Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-μm operation

A back-incident Si/sub 0.65/Ge/sub 0.35//Si multiple quantum-well resonant-cavity-enhanced photodetector operating near 1.3 /spl mu/m is demonstrated on a separation-by-implantation-oxygen substrate. The resonant cavity is composed of an electron-beam evaporated SiO/sub 2/-Si distributed Bragg reflector as a top mirror and the interface between the buried SiO/sub 2/ and the Si substrate as a bottom mirror. We have obtained the responsivity as high as 31 mA/W at 1.305 /spl mu/m and the full width at half maximum of 14 nm.

Absolute measurement of penetration depth in a superconducting film by the two-coil technique

A two-coil mutual-inductance apparatus that is optimized to allow for the measurement of the absolute value of penetration depth λ in superconducting films is described. Nb films with thickness d ranging from 20 to 90 nm are used to illustrate the measurement. For a 70-nm-thick Nb film at 4.2 K, with d/λ∼0.6, the uncertainty in the measured λ is about ±2.3%. From the results on the Nb film series, we show that a satisfactory determination of the absolute value of λ is possible for these films with d/λ<0.95.

A noise feedback least-mean-square algorithm of data processing for SQUID-based magnetocardiography

We present a modified normalized least-mean-square algorithm for SQUID-based magnetocardiography data processing with a new error function, in which the instantaneous signal component represented approximately by an average of near past error data has been eliminated. In this way, the rebounds of the weight vector W from its optimal value in parameter space due to the signal component can be well avoided.

Magnetic microscopy based on high-Tc SQUIDs for room temperature samples

The SQUID microscope is the most suitable instrument for imaging magnetic fields above sample surfaces if one is mainly interested in field sensitivity. In this paper, both the magnetic moment sensitivity and spatial resolution of the SQUID microscope are analysed with a simple point moment model. The result shows that the ratio of SQUID sensor size to sensor–sample distance effectively influences the sensitivity and spatial resolution. In comparison with some experimental results of magnetic images for room temperature samples from our high-Tc SQUID microscope in an unshielded environment, a brief discussion for further improvement is presented.

Dynamic study and experimental “two-step process” of substrate step preparation for high-Tc Josephson junctions

We report theoretical and experimental studies of the dynamics of substrate step preparation for high-Tc Josephson junctions. A maximum step edge angle of 70.8° has been calculated for SrTiO3 (STO) substrates with a Nb mask. This calculated angle agrees well with our experimental result of 66°. Step-edge angles can be predicted for different purposes using this method. We also utilized a “two-step process” to improve the surface morphology of the stepped substrate, and step-edge Josephson junctions were fabricated with good uniformity.

Fabrication and properties of all-refractory Nb/Al–AlOx–Ti junctions for microbolometers and microrefrigerators

Fabrication of all-refractory Nb/Al–AlOx–Ti superconducting tunnel junctions using selective titanium etching process (STEP) is described. Results including anodization properties of Ti, and junction’s I–V characteristics and subgap currents measured in the temperature range of 0.4–9.2 K are presented. The junctions show fairly high quality with respect to their stability and reproducibility. Possible utilization of these junctions as superconductor–insulator–normal metal type devices operating around 100 mK and above for ultrasensitive microbolometer and electronic microrefrigerator applications is discussed.

Controlled couplings for Cooper-pair charge qubits

Abstract Quantum manipulation means controlling the states of single and multiple quantum-bit (qubit) by some methods. In this paper, we discuss a Cooper-pair charge qubit system composed of symmetrical dc SQUID’s or low-capacitance Josephson corner junctions made up of d- and s-wave superconductors. Single- and two-qubit operations can be realized in the system by controlling the gate voltages and external magnetic fields in an easy way.

A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy

Photocurrent spectroscopy has been used to study quantum-well intermixing in this paper. The cut-off wavelength of the photodiodes based on the implanted and annealed materials is significantly reduced, compared with that measured in annealed-only photodetectors. The bandgap of SiGe quantum well in implanted and annealed samples is blue-shifted by up to 97 meV, relative to that in annealed-only samples

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er