R.D. Dupuis

Heavily‐doped n‐type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin

Heavily doped n‐type InP and InGaAs epitaxial layers have been grown by metalorganic chemical vapor deposition at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn‐doped InP and InGaAs layers have been grown with doping concentrations as high as n300K∼3.3×1019 cm−3 and n300 K∼6.1×1019 cm−3, respectively. Hall measurements of Nd‐Na at 300 and 77 K indicate that the Sn is uncompensated up to these concentrations. Analysis of the Sn concentration in InP:Sn and InGaAs:Sn layers using secondary ion mass spectrometry, shows that all of the Sn is ionized in InP and InGaAs until a limit is reached that corresponds to the electrical limits. SIMS profiles also show that the use of TESn for the growth n+ InP and InGaAs layers results in no severe memory effects and that abrupt Sn doping profiles can be achieved.

Room‐temperature photopumped operation of an InGaAs‐InP vertical cavity surface‐emitting laser

Data are presented demonstrating the room‐temperature operation of an InP‐InGaAs vertical cavity surface‐emitting laser. The laser structure has an active region consisting of a 2‐μm‐thick bulk InGaAs layer and has an emission wavelength of 1.65 μm. Both the front and rear mirrors consist of quarter‐wave stacks of four pairs of electron beam evaporated layers of Si and SiO2 which have been optimized for maximum reflectivity. The structures are characterized in the transmission mode using a pump beam from a Nd:YAG laser at 1.06 μm.

InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition

Abstract InGaAs/InP heterostructure p-i-n photodiodes and two types of InGaAs/InP avalanche photodetectors have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapor deposition. The p-i-n photodetectors are diffused p-n junction devices of 75 μm diameter and have low dark currents ( ∼ 10 nA at - 10V), good quantum efficiencies ( ∼ 50% without anti-reflectance coatings), and response times less than 40 ps. The avalanche photodiodes with separate absorption and multiplication regions (SAM APDs) have shown the two-component pulse response that is typical of this type of structure with the fast component being 100 ps and the slow component being 6ns. This slow component has been eliminated by incorporating an intermediate-band-gap transition region between the absorption and multiplication regions. The APDs exhibit low dark currents ( ∼ 32 nA at 90% of breakdown) and high-speed response ( ∼ 100 ps FWHM).

Quarter-wave Bragg reflector stack of InP-In0.53Ga0.47As for 1.65 μm wavelength

Quarter‐wave semiconductor mirrors of InP‐In0.53Ga0.47As for high reflectivity at 1.65 μm wavelength are epitaxially grown using metalorganic chemical vapor deposition. Doping of the In0.53Ga0.47As layers is found to be critical for high reflectivity at wavelengths corresponding to the In0.53Ga0.47As band gap. n‐type doping reduces the band‐to‐band absorption resulting in high reflectivity while p‐type doped mirrors show reduced reflectivity.

Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition

InP/InGaAs avalanche photodiodes with separate absorption and multiplication regions (SAM APDs) have been fabricated from wafers grown by atmospheric-pressure metalorganic chemical vapor deposition. These APDs exhibit low dark current and good quantum efficiency. The pulse response exhibits the two-component response typical of the SAM-APD structure. The slow component is 6 ns and the fast component is 100 ps.

Principles and Applications of Metalorganic Chemical Vapor Deposition for the Growth of ih-V Compounds on Si Substrates

The use of the metalorganic chemical vapor deposition thin film materials technology in the heteroepitaxial growth of GaAs on Si substrates is of increasing interest for a wide variety of applications. This paper will describe the principles and applications of this materials technology and discuss possible future approaches to the growth of high-quality HI-V heteroepitaxial layers on Si substrates.

Planar InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition

Planar InGaAs/InP heterostructure photodiodes have been fabricated from structures grown by atmospheric pressure metalorganic chemical vapor deposition. Diffused p-n junction devices of 75µm diameter have low dark currents (∼20nA at -10V), good quantum efficiencies of ∼50% (without AR coatings), and very high speed response (∼35ps).