R. H. Miwa

σ- and π-Defects at Graphene Nanoribbon Edges: Building Spin Filters

The presence of certain kinds of defects at the edges of monohydrogenated zigzag graphene nanoribbons changes dramatically the charge transport properties inducing a spin-polarized conductance. Using an approach based on density functional theory and nonequilibrium Greens function formalism to calculate the transmittance, we classify the defects in different classes depending on their distinct transport properties: (i) sigma-defects, which do not affect the transmittance close to the Fermi energy (EF); and (ii) pi-defects, which cause a spin polarization of the transmittance and that can be further divided into either electron or hole defects if the spin transport polarization results in larger transmittance for the up or down spin channel, respectively.

Directional dependence of the electronic and transport properties of 2D borophene and borophane

Very recently two dimensional layers of boron atoms, so called borophene, have been successfully synthesized. It presents a metallic band structure, with a strong anisotropic character. Upon further hydrogen adsorption a new material is obtained, borophane; giving rise to a Dirac cone structure like the one in graphene. We have performed a first-principles study of the electronic and transport properties of borophene and borophane through the Landauer-Büttiker formalism. We find that borophene presents an electronic current two orders of magnitude larger than borophane. In addition we verified the direction dependence of the electronic current in two perpendicular directions, namely, Ix and Iy; where for both systems, we found a current ratio, η = Ix/Iy, of around 2. Aiming to control such a current anisotropy, η, we performed a study of its dependence with respect to an external strain. Where, by stretching the borophane sheet, η increases by 11% for a bias voltage of 50 mV.

Quenching of local magnetic moment in oxygen adsorbed graphene nanoribbons

The electronic and magnetic properties of oxidized zigzag and armchair graphene nanoribbons, with hydrogen passivated edges, have been investigated from ab initio pseudopotential calculations within the density functional scheme. The oxygen molecule in its triplet state is adsorbed most stably at the edge of a zigzag nanoribbon. The Stoner metallic behavior of the ferromagnetic nanoribbons and the Slater insulating (ground state) behavior of the antiferromagnetic nanoribbons remain intact upon oxygen adsorption. The formation of a spin-paired C-O bond drastically reduces the local atomic magnetic moment of carbon at the edge of the ferromagnetic zigzag ribbon.

A comparative study of dissociative adsorption of NH3, PH3, and AsH3 on Si(001)–(2×1)

Using a first-principles pseudopotential method we have studied the adsorption and dissociation of NH3, PH3, and AsH3 on the Si(001)–(2×1) surface. Apart from the existence of a barrier for the adsorption of the precursor state for arsine, we observe that the global behavior for the chemisorption of the XH3 molecules considered in this work is as follows: the gas phase XH3 adsorbs molecularly to the electrophilic surface Si atom and then dissociates into XH2 and H, bonded to the electrophilic and nucleophilic surface silicon dimer atoms, respectively. The energy barrier, corresponding to a thermal activation, is much smaller than the usual growth temperature, indicating that all three molecules will be observed in their dissociated states at room temperature. All adsorbed systems are characterized by elongated Si–Si dimers that are (almost) symmetric in the dissociative case but asymmetric in the molecular case. According to our first-principles calculations, all XH3 and XH2 systems retain the pyramidal g...

Doping of graphene adsorbed on the a-SiO2 surface

We have performed an ab initio theoretical investigation of a graphene sheet adsorbed on amorphous SiO2 surface (G/a-SiO2). We find that graphene adsorbs on the a-SiO2 surface through van der Waals interactions. The inhomogeneous topology of the a-SiO2 clean surface promotes a total charge density displacement on the adsorbed graphene sheet, giving rise to electron-rich as well as hole-rich regions on the graphene. Furthermore, the adsorbed graphene sheet exhibits a net total charge density gain. In this case, the graphene sheet becomes n-type doped, however, no chemical bonds form at the graphene–SiO2 interface. The electronic charge transfer from a-SiO2 to the graphene sheet occurs upon the formation of a partially occupied level lying above the Dirac point. We find that this partially occupied level comes from the three-fold coordinated oxygen atoms in the a-SiO2 substrate.

Spin texture and magnetic anisotropy of Co impurities in Bi2Se3topological insulators

Based upon first-principles methods, we investigate the magnetic anisotropy and the spin-texture of Co adatoms embedded in the topmost Se network of the topological insulator Bi

Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H∕Si(001)

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Bi covered Si(111) surface revisited

Se

Lithium incorporation at the MoS2/graphene interface: an ab initio investigation

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Hydrogenated grain boundaries in graphene

surface. We find the formation of energetically stable magnetic moment perpendicular to the surface plane, S