R. P. Borges

Magnetism in Ar-implanted ZnO

ZnO single crystals were implanted with Ar ions with an energy of 100 keV and different fluences. Ferromagnetic behaviour is observed at room temperature after implantation. This behaviour is suppressed after consecutive annealings at 400 and 500 °C. Although trace transition metal impurities have been identified in the virgin samples, it is shown that they cannot account for the observed magnetic behaviour that is assigned to the presence of implantation-induced lattice defects.

Electronic structure, optical and magnetic properties of Co2FeGe Heusler alloy films

Optical properties of ferromagnetic half-metallic full-Heusler Co

Photophysical properties and photobiological activity of the furanochromones visnagin and khellin.

_{2}

Ab-initio calculations of the Ruddlesden?Popper phases CaMnO3, CaO(CaMnO3) and CaO(CaMnO3)2

FeGe alloy are investigated experimentally and theoretically. Co

Self-doping and the role of oxygen vacancies in the magnetic properties of cubic BaFeO3−δ

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Nitrogen and argon doped zinc oxide.

FeGe thin films were obtained by DC magnetron sputtering and show the saturation magnetization at

Spin injection efficiency in spin electronic devices

T

Structural and magnetic properties of thin films of BaFeO3-δ deposited by pulsed injection metal-organic chemical vapor deposition

=10 K of

Rotatable magnetic anisotropy in Si/SiO2/(Co2Fe)xGe1?x Heusler alloy films

m\approx

Electron doping of Ca4Mn3O10 induced by vanadium substitution

5.6