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Dive into the research topics where R. Pickenhain is active.

Publication


Featured researches published by R. Pickenhain.


Physica Status Solidi (a) | 1985

A simple method for the determination of both photoionization and photoneutralization cross-sections of deep levels by optical DLTS

S. Brehme; R. Pickenhain


Crystal Research and Technology | 1991

MOVPE of InP Using Trimethylindium – Trimethylamine Adduct

B. P. Keller; G. Oelgart; R. Pickenhain; G. Grummt; W. Seifert


Physica Status Solidi (a) | 1986

An experimental study on deep level incorporation and background doping in hydride VPE GaAs

B. Diegner; H. Weinert; R. Pickenhain; W. Hörig


Physica Status Solidi (a) | 1985

Degradation of green light emitting diodes LPE‐GaP:N II. Injection luminescence spectroscopy and kinetics

B. Rheinländer; G. Oelgart; H. Haefner; R. Pickenhain


Crystal Research and Technology | 1985

A correlation between concentration of deep levels and growth conditions for VPEGaP

W. Seifert; K. Jacobs; R. Pickenhain; G. Biehne


Physica Status Solidi (a) | 1984

Green and Yellow Light Emitting Diodes Produced from Vapour Phase Epitaxial GaP:N. I. Deep Levels in Diodes Produced by either Diffusion or Implantation of Zinc

R. Pickenhain; K. Jacobs; W. Seifert; V. Chernyi; S. Brehme


Physica Status Solidi (a) | 1984

Degradation of green light emitting diodes LPE-GaP:N I. electron beam characterization and deep-level spectroscopy

G. Oelgart; B. Rheinländer; H. Haefner; R. Pickenhain


Physica Status Solidi (a) | 1988

Properties of red light emitting (Al, Ga)As double heterostructure diodes

G. Grummt; H. Haefner; G. Oelgart; W. Thielemann; R. Pickenhain; B. Jacobs


Physica Status Solidi (a) | 1983

PGa Antisite Defect in Zn-Implanted GaAs0.1 P0.9. LED

R. Pickenhain; B. Rheinläer; S. Brehme


Physica Status Solidi (a) | 1997

The Temperature Dependence of the Optical Absorption of an InAs‐Monolayer Embedded in GaAs Measured by Means of Photocurrent

R. Pickenhain; V. Gottschalch

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H. Haefner

Humboldt University of Berlin

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