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Dive into the research topics where R. Riemenschneider is active.

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Featured researches published by R. Riemenschneider.


Sensors and Actuators A-physical | 1998

III–V Compound semiconductor micromachined actuators for long resonator tunable fabry-pérot detectors

A. Dehé; J. Peerlings; J. Pfeiffer; R. Riemenschneider; Alexander Vogt; K. Streubel; H. Künzel; Peter Meissner; Hans L. Hartnagel

Abstract Modern telecommunication demands tunable detectors that are needed for optical demultiplexing of fibre-transmitted data. The receiver therefore consists of a wavelength-selective detector sensitive around 1550 nm. Since detectors for this wavelength are typically fabricated on gallium arsenide (GaAs) or indium phosphide (InP), a monolithic integration with the filter provides additional functionality and reduces coupling problems. This article presents a long-resonator Fabry-Perot filter that has been fabricated by bulk micromachining and can be tuned by deflection of one or both of the Bragg mirrors that are realized as floating membranes. Thermal actuation of the membrane yields mechanical sensitivities up to 153 nm mW −1 under vacuum conditions and 13 nm mW −1 under normal pressure. This is high enough to tune the free spectral range with less than 5 mW.


High-power lasers and applications | 1998

Mechanical-optical analysis of InP-based Bragg membranes for selective tunable WDM receivers

R. Riemenschneider; J. Peerlings; J. Pfeiffer; A. Dehé; Andreas Vogt; Peter Meissner; Hans L. Hartnagel; N. Chitica; Juergen Daleiden; Klaus Streubel; Harald Kuenzel; W. Goertz

Monolithically-integrated wavelength-selective receivers are needed for dense wavelength-division multiplex transmission in the 1.55 micrometers wavelength regime. We present a novel concept for tunable optical Fabry-Perot filters with long resonant cavities of about 30 micrometers . III-V semiconductor technology compatible to PIN detector integration is applied to fabricate bulk-micromachined movable membrane Bragg mirrors. The initial membrane curvature as well as the actuation-induced bending are analyzed using a white light interferometer. Continuous filter tuning achieved by thermal or electrostatical actuation is analyzed in the optical as well as in the mechanical regime. Opto-mechanical constraints of the realized filters are discussed in view of novel epitaxial demands and optimum design for micro-opto- electro-mechanical receiver systems.


optical fiber communication conference | 1999

InP-based bulk-micromachined tunable filter applications for WDM systems

J. Pfeiffer; J. Peerlings; R. Riemenschneider; R. Genovese; Michael Aziz; G. Böhm; Markus-Christian Amann; Peter Meissner; Hans L. Hartnagel

A micromechanically wavelength-tunable optical filter with an integrated pin-photodetector for the wavelength band around 1.55 micrometer is demonstrated. The micromechanical modification of the resonator length realized by either thermal or electrostatic actuation of micromachined Bragg reflectors is used as tuning principle. The maximum tuning of the filter can be determined by its free spectral range (FSR) in the order of 40 nm, according to a resonator length around 30 micrometer. The required micromechanical displacement of the movable Bragg mirror of 800 nm is observed for an actuation voltage of 32 V utilizing capacitive actuators, while a heating power of 1.3 mW is required for electrothermally actuated membranes. Epitaxial (InAlGaAs/InAlAs) as well as dielectric (SiO2/Si3N4) material compositions are used for the Bragg reflectors to meet the mechanical and optical demands of the filter. The experimental full width at half maximum (FWHM) of the tunable wavelength division multiplexing (WDM) filter is 0.24 nm corresponding to a finesse of F equals 180. The insertion loss at resonance wavelength is 2.8 dB, whereas the contrast between maximum and minimum transmission exceeds 40 dB. The integration of an InGaAs/InP photodiode and a bulk- micromachined Bragg mirror allows the realization of a wavelength-selective pin photodetector. We report on bulk- micromachined thermally actuated highly selective photodetectors with a maximum tuning range of 35 nm, a FWHM around 0.4 nm and a tuning sensitivity of 20 nm mW-1. The technology discussed in this paper will be compatible to opto-electronic integrated circuit (OEIC) fabrication processing based on the InP-material system and therefore will enable the realization of receiver front ends with higher functionality for future dynamic WDM systems.


International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98 | 1999

Integration of InGaAs/InP Pin diodes with Fabry-Pérot filters for wavelength selective receivers

R. Riemenschneider; J. Peerlings; V. Naveen Kumar; Martin Strassner; J. Pfeiffer; Kabula Mutamba; S. Herbst; Juergen Daleiden; Volker Scheuer; Hans L. Hartnagel; Peter Meissner

We have fabricated InGaAs/InP PIN diodes with a coplanar waveguide design. The diodes have been integrated in a two- chip wavelength-selective Fabry-Perot filter for the use as wavelength-selective PIN receivers for dense wavelength division multiplex systems.


Materials Science in Semiconductor Processing | 2000

InAlGaAs bulk micromachined tunable Fabry–Pérot filter for dense WDM systems

J. Pfeiffer; J. Peerlings; R. Riemenschneider; R. Genovese; Michael Aziz; E Goutain; H Künzel; W Görtz; G Böhm; M.C Amann; P Meißner; Hans L. Hartnagel


Archive | 1998

InP bulk micromachined tunable Bragg mirrors for optical filter applications in WDM systems

Joachim Pfeiffer; R. Riemenschneider; J. Peerlings; A. Dehé; Kabula Mutamba; Peter Meissner; Hans L. Hartnagel


Archive | 1999

III-V-Micromechanics for sensing applications in mechanical engineering and for optical communications

Hans L. Hartnagel; K. Mutamba; M. Brandt; J. Pfeiffer; R. Riemenschneider; P. Meißner; Bert Breuer; Dietmar K. Hennecke; Bernd Stoffel


Archive | 1999

Indium phosphide based bulked micromachining technology for micromechanically tunable WDM filter applications

Joachim Pfeiffer; R. Riemenschneider; Kabula Mutamba; J. Peerlings; B. E. Afshar; Herbert Baaser; D. Grunert; Peter Meissner; Hans L. Hartnagel


Archive | 1999

Compound semiconductor MEMS for sensing and optical communication systems

Hans L. Hartnagel; K. Mutamba; J. Pfeiffer; R. Riemenschneider; J. Peerlings


Archive | 1999

p-i-n Receiver for WDM Systems

J. Peerlings; R. Riemenschneider; V. Naveen Kumar; Martin Strassner; J. Pfeiffer; V. Scheuer; Juergen Daleiden; Kabula Mutamba; S. Herbst; Hans L. Hartnagel; Peter Meissner

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J. Peerlings

Technische Universität Darmstadt

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J. Pfeiffer

Technische Universität Darmstadt

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Hans L. Hartnagel

Technische Universität Darmstadt

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Peter Meissner

Technische Universität Darmstadt

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Kabula Mutamba

Technische Universität Darmstadt

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A. Dehé

Technische Universität Darmstadt

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Juergen Daleiden

Royal Institute of Technology

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Alexander Vogt

Technische Universität Darmstadt

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Michael Aziz

Technische Universität Darmstadt

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