R. Stockton Gaines

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer

Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layer

Strained Semiconductor Using Elastic Edge Relaxation, a Buried Stressor Layer and a Sacrificial Stressor Layer

Method of forming a field effect transistors with a sacrificial stressor layer and strained source and drain regions formed in recesses

PROCESS FOR FABRICATING A FIELD-EFFECT TRANSISTOR WITH DOPING SEGREGATION USED IN SOURCE AND/OR DRAIN

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL ATOMIC MONOLAYERS

Method of making a semiconductor device having a strained semiconductor active region using edge relaxation, a buried stressor layer and a sacrificial stressor layer

Zugverformte Halbleiter-Photonenemissions- und -Detektionsanordnungen und integrierte photonische Systeme Tensile-semiconductor Photonenemissions- and -Detektionsanordnungen and integrated photonic systems

Zugverformte Halbleiter-Photonenemissions- und -Detektionsanordnungen und integrierte photonische Systeme