R. Swapna

Dual acceptor doping and aging effect of p-ZnO:(Na, N) nanorod thin films by spray pyrolysis

An attempt has been made to realize p-type ZnO by dual acceptor doping (Na-N) into ZnO thin films. Na and N doped ZnO thin films of different concentrations (0 to 8 at.%) have been grown by spray pyrolysis at 623 K. The grown films on glass substrate have been characterized by X-ray diffraction (XRD), Hall measurement, UV-Vis spectrophotometer, Photoluminescence (PL) and Energy dispersive spectroscopy (EDS) to validate the p-type conduction. The surface morphology and roughness of the ZnO:(Na, N) films are studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. Hall measurement shows that all the films exhibit p-type conductivity except for 0 at.% Na-N doped ZnO film. The obtained resistivity (5.60×10−2 Ω cm) and hole concentration (3.15×1018 cm−3) for the best dual acceptor doped film is 6 at.%. It has been predicted that (NaZn−NO) acceptor complex is responsible for the p-type conduction. The p-type conductivity of the ZnO:(Na, N) films is stable even after 6 month...

Aging and annealing effects on properties of Ag-N dual-acceptor doped ZnO thin films

Ag-N dual acceptor doping into ZnO has been proposed to realize p-ZnO thin film of different concentrations (1, 2 and 4 at.%) by spray pyrolysis at 623 K and then 4 at.% films annealed at 673 K and 723 K for 1 hr. X-ray diffraction studies reveal that all the films are preferentially oriented along (002) plane. Energy dispersive spectroscopy (EDS) confirms the presence of Ag and N in 2 at.% ZnO:(Ag, N) film. Hall measurement shows that 4 at.% ZnO:(Ag, N) film achieved minimum resistivity with high hole concentration. The p-type conductivity of the ZnO:(Ag, N) films is retained even after 180 days. Photoluminescence (PL) spectra of ZnO:(Ag, N) films show low density of native defects.