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Featured researches published by R. T. Lechner.


ACS Nano | 2011

Infrared Emitting and Photoconducting Colloidal Silver Chalcogenide Nanocrystal Quantum Dots from a Silylamide-Promoted Synthesis

Maksym Yarema; Stefan Pichler; Mykhailo Sytnyk; Robert Seyrkammer; R. T. Lechner; Gerhard Fritz-Popovski; Dorota Jarzab; Krisztina Szendrei; Roland Resel; Oleksandra Korovyanko; Maria Antonietta Loi; Oskar Paris; Guenter Hesser; W. Heiss; G. Hesser

Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region, making these materials promising as environmentally benign alternatives to established infrared active nanocrystals containing toxic metals such as Hg, Cd, and Pb. We present Ag(2)Se nanocrystals in detail, giving size-tunable luminescence with quantum yields above 1.7%. The luminescence, with a decay time on the order of 130 ns, was shown to improve due to the growth of a monolayer thick ZnSe shell. Photoconductivity with a quantum efficiency of 27% was achieved by blending the Ag(2)Se nanocrystals with a soluble fullerene derivative. The co-injection of lithium silylamide was found to be crucial to the synthesis of Ag chalcogenide nanocrystals, which drastically increased their nucleation rate even at relatively low growth temperatures. Because the same observation was made for the nucleation of Cd chalcogenide nanocrystals, we conclude that the addition of lithium silylamide might generally promote wet-chemical synthesis of metal chalcogenide nanocrystals, including in as-yet unexplored materials.


Physical Review Letters | 2008

Controlled Aggregation of Magnetic Ions in a Semiconductor: An Experimental Demonstration

A. Bonanni; A. Navarro-Quezada; Tian Li; M. Wegscheider; Z. Matěj; Václav Holý; R. T. Lechner; G. Bauer; Mauro Rovezzi; F. d’Acapito; M. Kiecana; M. Sawicki; T. Dietl

The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by the growth rate and doping with shallow impurities.


Applied Physics Letters | 2010

Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1−xMnxTe

R. T. Lechner; G. Springholz; M. Hassan; H. Groiss; R. Kirchschlager; J. Stangl; N. Hrauda; G. Bauer

Ferromagnetic Ge1−xMnxTe grown by molecular beam epitaxy with Mn content of xMn≈0.5 is shown to exhibit a strong tendency for phase separation. At higher growth temperatures apart from the cubic Ge0.5Mn0.5Te, a hexagonal MnTe and a rhombohedral distorted Ge0.83Mn0.17Te phase is formed. This coexistence of antiferromagnetic MnTe and ferromagnetic Ge0.5Mn0.5Te results in magnetic exchange-bias effects.


Chemistry of Materials | 2014

Crystal Phase Transitions in the Shell of PbS/CdS Core/Shell Nanocrystals Influences Photoluminescence Intensity

R. T. Lechner; Gerhard Fritz-Popovski; Maksym Yarema; W. Heiss; Armin Hoell; Tobias U. Schülli; Daniel Primetzhofer; M. Eibelhuber; Oskar Paris

We reveal the existence of two different crystalline phases, i.e., the metastable rock salt and the equilibrium zinc blende phase within the CdS-shell of PbS/CdS core/shell nanocrystals formed by cationic exchange. The chemical composition profile of the core/shell nanocrystals with different dimensions is determined by means of anomalous small-angle X-ray scattering with subnanometer resolution and is compared to X-ray diffraction analysis. We demonstrate that the photoluminescence emission of PbS nanocrystals can be drastically enhanced by the formation of a CdS shell. Especially, the ratio of the two crystalline phases in the shell significantly influences the photoluminescence enhancement. The highest emission was achieved for chemically pure CdS shells below 1 nm thickness with a dominant metastable rock salt phase fraction matching the crystal structure of the PbS core. The metastable phase fraction decreases with increasing shell thickness and increasing exchange times. The photoluminescence intensity depicts a constant decrease with decreasing metastable rock salt phase fraction but shows an abrupt drop for shells above 1.3 nm thickness. We relate this effect to two different transition mechanisms for changing from the metastable rock salt phase to the equilibrium zinc blende phase depending on the shell thickness.


Physical Review B | 2010

Exchange interactions in europium monochalcogenide magnetic semiconductors and their dependence on hydrostatic strain

W. Söllinger; W. Heiss; R. T. Lechner; K. Rumpf; P. Granitzer; H. Krenn; G. Springholz

The classical Heisenberg model is applied in a Monte Carlo study to investigate the distance dependence of the indirect nearest neighbor (NN) exchange and next-nearest neighbor (NNN) superexchange interaction in EuO, EuS, EuSe and EuTe. For this purpose, first, the dependence of the magnetic ordering temperature, i.e., Curie, respectively, Neel temperature for ferromagnetic and antiferromagnetic ordering on the exchange constants was determined. This was then employed for the analysis of experimental data of hydrostatic pressure experiments. It is shown that all experimental findings, i.e., the strong increase of the critical temperatures, as well as the transition from antiferromagnetic to ferromagnetic ordering for EuTe and EuSe with decreasing lattice parameter is well described by the magnetic Gruneisen law, in which the exchange constants depend on the interatomic distances of the Eu ions in the form of a power law. According to these calculations, the indirect NN exchange is characterized by a Gruneisen exponent of approximately 20 and the NNN superexchange by an exponent of about 10 for all four europium monochalcogenides. The latter agrees with Blochs empirical 10/3 law for the volume dependence of superexchange interactions in insulating magnetic materials. The Monte Carlo calculations also yield significantly revised exchange constants for unstrained bulk material because spin fluctuations at non-zero temperatures are taken into account. The strong increase of the exchange constants with decreasing lattice parameter provides room for increasing the Curie temperatures in strained epitaxial structures, which is important for device applications.


Journal of Applied Crystallography | 2008

Evidence of stacking‐fault distribution along an InAs nanowire using micro‐focused coherent X‐ray diffraction

Virginie Chamard; J. Stangl; S. Labat; Bernhard Mandl; R. T. Lechner; T. H. Metzger

InAs nanowire samples grown by metal-organic chemical vapor deposition present a significant amount of wurtzite structure, while the zincblende lattice is known to be the stable crystal structure for the bulk material. The question of the wurtzite distribution in the sample is addressed using phase-sensitive coherent X-ray diffraction with a micro-focused beam at a synchrotron source. The simultaneous investigation of the wurtzite 10bar{1}0, 20bar{2}0 and 30bar{3}0 reflections performed on a bunch of single wires shows unambiguously that the wurtzite contribution is a result of stacking faults distributed along the wire. Additional simulations lead to adjustments of the wire structural parameters, such as the wurtzite content, the strain distribution, the wire diameters and their respective orientations.


Applied Physics Letters | 2002

Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction

Zhenyang Zhong; O. Ambacher; A. Link; V. Holy; J. Stangl; R. T. Lechner; T. Roch; G. Bauer

X-ray reflectivity and diffraction measurements were performed on Ga-face AlGaN/GaN heterostructures to determine the influence of interface roughness scattering and GaN domain boundaries scattering on the electron mobility of polarization induced two-dimensional electron gases. From simulations of the specular reflectivity, the root-mean-square roughness of the AlGaN/GaN interfaces was obtained. In reciprocal space maps, laterally elongated streaks passing through the Bragg peaks have been observed, which are attributed to column-like domains in the GaN buffer layers. The relationship between electron mobility measured by Hall effect and the interface roughness on one hand, and the column domain size on the other hand, demonstrates that the interface roughness scattering is not limiting the electron mobility, whereas the transport properties of the two-dimensional electron gas degrade with decreasing size of columnar domains in the GaN layer.


Physical Review B | 2010

Embedded magnetic phases in (Ga,Fe)N: Key role of growth temperature

A. Navarro-Quezada; W. Stefanowicz; Tian Li; B. Faina; Mauro Rovezzi; R. T. Lechner; T. Devillers; F. d’Acapito; G. Bauer; M. Sawicki; T. Dietl; A. Bonanni

The local chemistry, structure, and magnetism of (Ga,Fe)N nanocomposites grown by metal-organic vapor-phase epitaxy are studied by synchrotron x-ray diffraction and absorption, high-resolution transmission electron microscopy, and superconducting quantum interference device magnetometry as a function of the growth temperature


Applied Physics Letters | 2009

Self-assembled Mn5Ge3 nanomagnets close to the surface and deep inside a Ge1−xMnx epilayer

R. T. Lechner; Václav Holý; S. Ahlers; Dominique Bougeard; J. Stangl; A. Trampert; A. Navarro-Quezada; G. Bauer

{T}_{text{g}}


Applied Physics Letters | 2004

Ordering parameters of self-organized three-dimensional quantum-dot lattices determined from anomalous x-ray diffraction

R. T. Lechner; T. U. Schülli; Václav Holý; G. Springholz; J. Stangl; A. Raab; G. Bauer; T. H. Metzger

. Three contributions to the magnetization are identified: (i) paramagneticchar22{}originating from dilute and noninteracting

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G. Bauer

Johannes Kepler University of Linz

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J. Stangl

Johannes Kepler University of Linz

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G. Springholz

Johannes Kepler University of Linz

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W. Heiss

University of Erlangen-Nuremberg

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T. U. Schülli

Johannes Kepler University of Linz

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A. Raab

Johannes Kepler University of Linz

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Maksym V. Kovalenko

Swiss Federal Laboratories for Materials Science and Technology

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A. Navarro-Quezada

Johannes Kepler University of Linz

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