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Dive into the research topics where R. Timm is active.

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Featured researches published by R. Timm.


Applied Physics Letters | 2002

Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix

A. Lenz; R. Timm; H. Eisele; Ch. Hennig; S. K. Becker; R. L. Sellin; U.W. Pohl; D. Bimberg; M. Dähne

We present cross-sectional scanning tunneling microscopy results of self-organized In0.8Ga0.2As quantum dots covered by an In0.1Ga0.9As film inside a GaAs matrix prepared by metalorganic chemical vapor deposition. From images of quantum dots with atomic resolution, we determine a spatial distribution of the In composition within the dots with a shape of a reversed truncated cone. The wetting layer and the overgrown In0.1Ga0.9As layer show vertical intermixing.


Journal of Crystal Growth | 2003

Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy

H. Eisele; A. Lenz; Ch. Hennig; R. Timm; M. Ternes; M. Dähne

In this work we present a comparative cross-sectional scanning tunneling microscopy study of different InAs and InGaAs quantum dot structures grown by metalorganic vapor phase epitaxy. The varying growth conditions lead to completely different spatial structures, as distinctive quantum dots, intermixed layers, and intermixed dots. Especially the overgrowth procedure and the arrangement of growth interruptions are responsible for segregation of the InAs material.


Archive | 2005

A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures

R. Timm; A. Lenz; J. Grabowski; H. Eisele; M. Dähne

We present cross-sectional scanning tunneling microscopy results of GaSb quantum wells and dots in GaAs. A fascinating potential of this technique for the investigation of overgrown nanostructures is demonstrated by revealing structural details of GaSb dots and wells with atomic resolution, by introducing a method to obtain the local stoichiometry, and by discussing different contributions to the image contrast in combination with the type-II band alignment.


Physica E-low-dimensional Systems & Nanostructures | 2006

Structure of InAs/GaAs quantum dots grown with Sb surfactant

R. Timm; H. Eisele; A. Lenz; T.-Y. Kim; F. Streicher; K. Pötschke; U.W. Pohl; D. Bimberg; M. Dähne


Physica E-low-dimensional Systems & Nanostructures | 2005

Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy

R. Timm; J. Grabowski; H. Eisele; A. Lenz; S.K. Becker; L. Müller-Kirsch; K. Pötschke; U.W. Pohl; D. Bimberg; M. Dähne


Physica Status Solidi B-basic Solid State Physics | 2009

Limits of In(Ga)As/GaAs quantum dot growth

A. Lenz; H. Eisele; R. Timm; L. Ivanova; R. L. Sellin; H. Y. Liu; M. Hopkinson; U. W. Pohl; D. Bimberg; M. Dähne


Physica E-low-dimensional Systems & Nanostructures | 2008

Structure of InAs quantum dots-in-a-well nanostructures

A. Lenz; H. Eisele; R. Timm; L. Ivanova; Huiyun Liu; M. Hopkinson; U. W. Pohl; M. Dähne


Physica Status Solidi (c) | 2006

Onset of GaSb/GaAs quantum dot formation

R. Timm; A. Lenz; H. Eisele; L. Ivanova; K. Pötschke; U.W. Pohl; D. Bimberg; G. Balakrishnan; Diana L. Huffaker; M. Dähne


Physica Status Solidi (c) | 2003

Segregation effects during GaAs overgrowth of InAs and InGaAs quantum dots studied by cross‐sectional scanning tunneling microscopy

H. Eisele; R. Timm; A. Lenz; Ch. Hennig; M. Ternes; S. K. Becker; M. Dähne


Physica Status Solidi (c) | 2010

Effect of nitrogen on the InAs/GaAs quantum dot formation

L. Ivanova; H. Eisele; A. Lenz; R. Timm; O. Schumann; L. Geelhaar; H. Riechert; M. Dähne

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H. Eisele

Technical University of Berlin

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M. Dähne

Technical University of Berlin

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A. Lenz

Technical University of Berlin

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L. Ivanova

Technical University of Berlin

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D. Bimberg

Technical University of Berlin

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U.W. Pohl

Technical University of Berlin

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K. Pötschke

Technical University of Berlin

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Ch. Hennig

Technical University of Berlin

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J. Grabowski

Technical University of Berlin

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