R. Tomasello

A strategy for the design of skyrmion racetrack memories.

Magnetic storage based on racetrack memory is very promising for the design of ultra-dense, low-cost and low-power storage technology. Information can be coded in a magnetic region between two domain walls or, as predicted recently, in topological magnetic objects known as skyrmions. Here, we show the technological advantages and limitations of using Bloch and Néel skyrmions manipulated by spin current generated within the ferromagnet or via the spin-Hall effect arising from a non-magnetic heavy metal underlayer. We found that the Néel skyrmion moved by the spin-Hall effect is a very promising strategy for technological implementation of the next generation of skyrmion racetrack memories (zero field, high thermal stability, and ultra-dense storage). We employed micromagnetics reinforced with an analytical formulation of skyrmion dynamics that we developed from the Thiele equation. We identified that the excitation, at high currents, of a breathing mode of the skyrmion limits the maximal velocity of the memory.

Skyrmion based microwave detectors and harvesting

Magnetic skyrmions are topologically protected states that are very promising for the design of the next generation of ultra-low-power electronic devices. In this letter, we propose a magnetic tunnel junction based spin-transfer torque diode with a magnetic skyrmion as ground state and a perpendicular polarizer patterned as nano-contact for a local injection of the current. The key result is the possibility to achieve sensitivities (i.e., detection voltage over input microwave power) larger than 2000 V/W for optimized contact diameters. We also pointed out that large enough voltage controlled magnetocrystalline anisotropy could significantly improve the sensitivity. Our results can be very useful for the identification of a class of spin-torque diodes with a non-uniform ground state and to understand the fundamental physics of the skyrmion dynamical properties.

Switching Properties in Magnetic Tunnel Junctions With Interfacial Perpendicular Anisotropy: Micromagnetic Study

The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density maintaining the thermal stability) has been achieved in MTJs with interfacial perpendicular anisotropy (IPA) at the interface between CoFeB and MgO. In this paper, micromagnetic simulations point out the influence of IPA and saturation magnetization (MS) on the properties of fast magnetization reversal achieved in 5, 10, and 20 ns. Both cases of in-plane and out-of-plane free layer are considered. In addition, the thermal effect is included for the in-plane switching at 20 ns and a complete analysis of energy dissipation during the switching is illustrated. This paper can provide useful information for the design of STT-based memories.

Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.

Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications.

Topological, non-topological and instanton droplets driven by spin-transfer torque in materials with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya Interaction.

The interfacial Dzyaloshinskii–Moriya Interaction can modify the topology of droplets excited by a localized spin-polarized current. Here, we show that, in addition to the stationary droplet excitations with skyrmion number either one (topological) or zero (non-topological), there exists, for a fixed current, an excited mode with a non-stationary time behavior. We call this mode “instanton droplet”, which is characterized by time domain transitions of the skyrmion number. These transitions are coupled to an emission of incoherent spin-waves that can be observed in the frequency domain as a source of noise. Our results are interesting from a fundamental point of view to study spin-wave emissions due to a topological transition in current-driven systems, and could open the route for experiments based on magnetoresistance effect for the design of a further generation of nanoscale microwave oscillators.

Spin-Hall nano-oscillator with oblique magnetization and Dzyaloshinskii-Moriya interaction as generator of skyrmions and nonreciprocal spin-waves

Spin-Hall oscillators (SHO) are promising sources of spin-wave signals for magnonics applications, and can serve as building blocks for magnonic logic in ultralow power computation devices. Thin magnetic layers used as “free” layers in SHO are in contact with heavy metals having large spin-orbital interaction, and, therefore, could be subject to the spin-Hall effect (SHE) and the interfacial Dzyaloshinskii-Moriya interaction (i-DMI), which may lead to the nonreciprocity of the excited spin waves and other unusual effects. Here, we analytically and micromagnetically study magnetization dynamics excited in an SHO with oblique magnetization when the SHE and i-DMI act simultaneously. Our key results are: (i) excitation of nonreciprocal spin-waves propagating perpendicularly to the in-plane projection of the static magnetization; (ii) skyrmions generation by pure spin-current; (iii) excitation of a new spin-wave mode with a spiral spatial profile originating from a gyrotropic rotation of a dynamical skyrmion. These results demonstrate that SHOs can be used as generators of magnetic skyrmions and different types of propagating spin-waves for magnetic data storage and signal processing applications.

Influence of the Dzyaloshinskii-Moriya interaction on the spin-torque diode effect

This paper predicts the effect of the Dzyaloshinskii-Moriya interaction (DMI) and spin Hall effect in the spin-torque diode response of a Magnetic Tunnel Junction built over a Tantalum strip. Our results indicate that, for a microwave current large enough, the DMI can change qualitatively the resonant response by splitting the ferromagnetic resonance peak. We also find out that the two modes have a non-uniform spatial distribution.

Performance of synthetic antiferromagnetic racetrack memory: domain wall versus skyrmion

A storage scheme based on racetrack memory, where the information can be coded in a domain or a skyrmion, seems to be an alternative to conventional hard disk drive for high density storage. Here, we perform a full micromagnetic study of the performance of synthetic antiferromagnetic (SAF) racetrack memory in terms of velocity and sensitivity to defects by using experimental parameters. We find that to stabilize a SAF skyrmion, the Dzyaloshinskii-Moriya Interaction in the top and the bottom ferromagnet should have an opposite sign. The velocity of SAF skyrmion and SAF Neel domain wall are of the same order and can reach values larger than 1200 m/s if a spin-orbit torque from the spin-Hall effect with opposite sign is applied to both ferromagnets.

Electrical detection of single magnetic skyrmion at room temperature

This paper proposes a protocol for the electrical detection of a magnetic skyrmion via the change of the tunneling magnetoresistive (TMR) signal in a three-terminal device. This approach combines alternating spin-transfer torque from both spin-filtering (due to a perpendicular polarizer) and spin-Hall effect with the TMR signal. Micromagnetic simulations, used to test and verify such working principle, show that there exists a frequency region particularly suitable for this achievement. This result can be at the basis of the design of a TMR based read-out for skyrmion detection, overcoming the difficulties introduced by the thermal drift of the skyrmion once nucleated.