R. Vilaplana

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase transitions taking place in this ordered-vacancy compound. Our measurements reveal that on decreasing pressure from 22 GPa, the sample does not revert to the initial phase but likely to a disordered zinc blende (DZ) structure the direct bandgap and Raman-active modes of which have been measured during a second upstroke. Our measurements have been complemented with electronic structure and lattice dynamical ab initio calculations. Lattice dynamical calculations have helped us to discuss and assign the symmetries of the Raman modes of the DC phase. Additionally, our electronic band structure calculations have helped us in discussing the order-disorder effects taking place above 6–8 GPa during the first upstroke.

High-pressure Raman spectroscopy and lattice-dynamics calculations on scintillating MgWO4: Comparison with isomorphic compounds

Research was financed by the Spanish Ministerio de Educacion y Ciencia (MEC) under Grants No. MAT2010-21270-C04-01/02/04, and No. CSD-2007-00045. J. R.-F. thanks the MEC for support through the FPI program, as well as the SPP1236 central facility in Frankfurt for its use. F. J. M. acknowledges support from Vicerrectorado de Investigacion y Desarrollo de la Universitat Politecnica de Valencia (UPV) (Grant No. UPV2010-0096). A. M. and P. R.-H. acknowledge the supercomputer time provided by the Red Espanola de Supercomputacion. A. F. appreciates support from the German Research Foundation (Grant No. FR2491/2-1).

Irregular Particles in Comet C/1995 O1 Hale-Bopp Inferred from its Mid-Infrared Spectrum

An analysis of the Infrared Space Observatory (ISO) infrared spectra of comet C/1995 O1 Hale-Bopp has been conducted. The particles in the coma are assumed to be irregular aggregates that are built by a diffusion-limited aggregation (DLA) procedure and are composed of olivine, both amorphous and crystalline, and glassy carbon. To simulate the morphological structure of the interstellar dust, the silicate component is placed in the inner layers of the aggregate, while the carbon dipoles occupy the outermost layers. The particle emissivities are calculated using the discrete dipole approximation (DDA) method of Draine & Flatau. The dust size distribution functions at different heliocentric distances (2.8, 2.9, and 3.9 AU) have been determined as the solution to three overdetermined systems of equations for the infrared flux at each wavelength in the 8-40 μm region. These size distributions can be well fitted by a power law, n(r) ∝ r-α, having power indexes that decrease with heliocentric distance as α = -3.6 ± 0.3 at 2.8 AU and -3.3 ± 0.3 at 3.9 AU.

High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4

In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB2X4 ordered-vacancy compounds with tetragonal defect chalcopyrite structure. We have carried out high-pressure x-ray diffraction measurements up to 13.2 GPa. Our measurements have been complemented and compared with total-energy ab initio calculations. The equation of state and the axial compressibilities for the low-pressure phase of HgGa2Se4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The theoretical cation-anion and vacancy-anion distances in HgGa2Se4 have been determined. The internal distance compressibility in HgGa2Se4 has been compared with those that occur in binary HgSe and e−GaSe compounds. It has been found that the Hg-Se and Ga-Se bonds behave in a similar way in the three compounds. It has also been found that bulk compressibility of the compounds decreases following the sequenc...

Thermally activated cation ordering in ZnGa2Se4 single crystals studied by Raman scattering, optical absorption, and ab initio calculations

Order-disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown sample with tetragonal defect stannite (DS) structure and I4¯2m space group has been subjected to controlled heating and cooling cycles. In situ Raman scattering measurements carried out during the whole annealing cycle show that annealing the sample to 400 °C results in a cation ordering in the sample, leading to the crystallization of the ordered tetragonal defect chalcopyrite (DC) structure with I4¯ space group. On decreasing temperature the ordered cation scheme of the DC phase can be retained at ambient conditions. The symmetry of the Raman-active modes in both DS and DC phases is discussed and the similarities and differences between the Raman spectra of the two phases emphasized. The ordered structure of annealed samples is confirmed by optical absorption measurements and ab initio calculations, that show that the direct bandgap of DC-ZnGa2Se4 is larger than that of DS-ZnGa2Se4.

Vibrational study of HgGa2S4 under high pressure

In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our measurements evidence that this semiconductor exhibits a pressure-induced phase transition from the completely ordered defect chalcopyrite structure to a partially disordered defect stannite structure above 18 GPa which is prior to the transition to the completely disordered rocksalt phase above 23 GPa. Furthermore, a completely disordered zincblende phase is observed below 5 GPa after decreasing pressure from 25 GPa. The disordered zincblende phase undergoes a reversible pressure-induced phase transition to the disordered rocksalt phase above 18 GPa. The sequence of phase transitions here reported for HgGa2S4 evidence the existence of an intermediate phase with partial cation-vacancy disorder between the ordered defect chalcopyrite and the disordered rocksalt phases and the irreversibi...

Raman scattering study of bulk and nanocrystalline PbMoO4 at high pressures

High-pressure Raman scattering measurements have been performed in wulfenite (PbMoO4) for both bulk and nanocrystalline powders up to 22 GPa. Our Raman scattering measurements evidence the phase transition from the tetragonal scheelite structure to the monoclinic M-fergusonite structure in both bulk and nanocrystalline powders above 10.8 and 13.4 GPa, respectively. The pressure dependences of the Raman active modes in both structures were compared and discussed based on our theoretical results obtained from lattice dynamics ab initio calculations.

High-pressure Raman scattering in wurtzite indium nitride

We perform Raman-scattering measurements at high hydrostatic pressures on c-face and a-face InN layers to investigate the high-pressure behavior of the zone-center optical phonons of wurtzite InN. Linear pressure coefficients and mode Gruneisen parameters are obtained, and the experimental results are compared with theoretical values obtained from ab initio lattice-dynamical calculations. Good agreement is found between the experimental and calculated results.

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20 GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new...

High-pressure structural and elastic properties of Tl2O3

The structural properties of Thallium (III) oxide (Tl2O3) have been studied both experimentally and theoretically under compression at room temperature. X-ray powder diffraction measurements up to 37.7 GPa have been complemented with ab initio total-energy calculations. The equation of state of Tl2O3 has been determined and compared to related compounds. It has been found experimentally that Tl2O3 remains in its initial cubic bixbyite-type structure up to 22.0 GPa. At this pressure, the onset of amorphization is observed, being the sample fully amorphous at 25.2 GPa. The sample retains the amorphous state after pressure release. To understand the pressure-induced amorphization process, we have studied theoretically the possible high-pressure phases of Tl2O3. Although a phase transition is theoretically predicted at 5.8 GPa to the orthorhombic Rh2O3-II-type structure and at 24.2 GPa to the orthorhombic α-Gd2S3-type structure, neither of these phases were observed experimentally, probably due to the hindrance of the pressure-driven phase transitions at room temperature. The theoretical study of the elastic behavior of the cubic bixbyite-type structure at high-pressure shows that amorphization above 22 GPa at room temperature might be caused by the mechanical instability of the cubic bixbyite-type structure which is theoretically predicted above 23.5 GPa.