Rafał Zybała

Dissipative soliton generation in Er-doped fiber laser mode-locked by Sb 2 Te 3 topological insulator

We report on the generation of dissipative solitons in an Er-doped fiber laser mode-locked by antimony telluride (Sb 2 Te 3) topological insulator in the near-zero dispersion regime. Layers of Sb 2 Te 3 were deposited on a side-polished (D-shaped) fiber using a pulsed magnetron sputtering technique. Sub-170-fs pulses with 34-nm full width at half-maximum (FWHM) and 0.21 nJ of pulse energy were obtained from an all-fiber, ring-shaped laser cavity after the compression in a single-mode fiber.

Investigation on pulse shaping in fiber laser hybrid mode-locked by Sb 2 Te 3 saturable absorber

We report a study on a hybrid mode-locked fiber laser with two saturable absorbers: slow and fast, integrated in a single device. Amorphous antimony telluride (Sb(2)Te(3)) layer was deposited on side-polished fiber to form the slow saturable absorber due to the third order nonlinear susceptibility of Sb(2)Te(3). Additionally, an unsymmetrical design of the device causes polarization-dependent losses and together with polarization controller allows to use a nonlinear polarization evolution to form the artificial fast saturable absorber. Sub-200 fs soliton pulses with 0.27 nJ of pulse energy were generated in the hybrid mode-locked Er-doped fiber laser. Differences in the dynamics of mode-locked laser are further investigated with the use of slow and fast saturable absorbers solely, and compared with the hybrid device. Joint operation of two saturable absorbers enhances the laser performance and stability. The conducted experiments allowed to define roles of each mechanism on the pulse shaping in the laser cavity.

Sb 2 Te 3 -deposited D-shaped fiber as a saturable absorber for mode-locked Yb-doped fiber lasers

We present a study on a antimony telluride (Sb2Te3)-deposited side-polished fiber device as a saturable absorber for Yb-doped mode-locked fiber lasers. Thin layers of Sb2Te3 with variable length were deposited by a pulsed magnetron sputtering technique. We demonstrate measured characteristics of the device and show that it can be treated as a hybrid component - tunable polarizer with saturable absorption properties. The polarizing extinction ratio varies from 1.5 dB up to 17.1 dB with increasing length of the deposition. The fiber components were employed in all-normal Yb-doped fiber cavities. All devices enabled for mode-locked operation by means of hybrid mode-locking or nonlinear polarization evolution mechanism. In particular, the laser with 2 mm long Sb2Te3 absorber emitted 5.9 ps pulses with 4 mW of average output power.

All-polarization-maintaining-fiber laser Q-switched by evanescent field interaction with Sb2Te3 saturable absorber

Abstract. We report on the generation of 152-nJ Q-switched pulses in all-polarization-maintaining Er-doped fiber laser. The laser is passively modulated by the antimony telluride (Sb2Te3) layer sputtered on a surface of the side-polished fiber in order to exploit the evanescent field interaction in optically nonlinear material. The laser cavity is designed in an extremely simple way comprising, in addition to fibers, only one component and the saturable absorber, forming a robust, compact, and stable source of short pulses. The repetition rate might be tuned from 42 kHz up to 132 kHz. The shortest recorded pulse duration was the 857 ns.

Effects of Carbon Allotropic Forms on Microstructure and Thermal Properties of Cu-C Composites Produced by SPS

Combination of extreme service conditions and complex thermomechanical loadings, e.g., in electronics or power industry, requires using advanced materials with unique properties. Dissipation of heat generated during the operation of high-power electronic elements is crucial from the point of view of their efficiency. Good cooling conditions can be guaranteed, for instance, with materials of very high thermal conductivity and low thermal expansion coefficient, and by designing the heat dissipation system in an accurate manner. Conventional materials such as silver, copper, or their alloys, often fail to meet such severe requirements. This paper discusses the results of investigations connected with Cu-C (multiwall carbon nanotubes (MWNTs), graphene nanopowder (GNP), or thermally reduced graphene oxide (RGO)) composites, produced using the spark plasma sintering technique. The obtained composites are characterized by uniform distribution of a carbon phase and high relative density. Compared with pure copper, developed materials are characterized by similar thermal conductivity and much lower values of thermal expansion coefficient. The most promising materials to use as heat dissipation elements seems to be copper-based composites reinforced by carbon nanotubes (CNTs) and GNP.

Microstructure and thermal properties of Cu-SiC composite materials depending on the sintering technique

The presented paper investigates the relationship between the microstructure and thermal properties of copper-silicon carbide composites obtained through hot pressing (HP) and spark plasma sintering (SPS) techniques. The microstructural analysis showed a better densification in the case of composites sintered in the SPS process. TEM investigations revealed the presence of silicon in the area of metallic matrix in the region close to metal-ceramic boundary. It is the product of silicon dissolving process in copper occurring at an elevated temperature. The Cu-SiC interface is significantly defected in composites obtained through the hot pressing method, which has a major influence on the thermal conductivity of materials.

2 µm ultrafast fiber laser modelocked by mechanically exfoliated Sb2Te3

We demonstrate the usage of a saturable absorber material - antimony telluride (Sb2Te3) for efficient mode-locking of a Thulium-doped fiber laser. The Sb2Te3 layers were obtained by mechanical exfoliation and transferred onto the fiber ferrule. The all-fiber laser was capable of generating optical solitons with the full width at half-maximum of 4.5 nm centered at 1945 nm, with 39.5 MHz repetition rate and more than 60 dB signal to noise ratio. The pulse energy of the generated 890 fs pulses was at the level of 30 pJ. Our experiment showed that Sb2Te3 saturable absorbers are suitable for the operation in 2 μm bandwidth.

Tm:GdVO4 microchip laser Q-switched by a Sb2Te3 topological insulator

We report on the first application of a topological insulator based on antimony telluride (Sb2Te3) as a saturable absorber (SA) in a bulk microchip laser. The transmission-type SA consisted of a thin film of Sb2Te3 (thickness: 3 nm) deposited on a glass substrate by pulsed magnetron sputtering. The saturable absorption of the Sb2Te3 film was confirmed for ns-long pulses. The microchip laser was based on a Tm:GdVO4 crystal diode-pumped at ∼802 nm. In the continuous-wave regime, this laser generated 3.54 W at 1905-1921 nm with a slope efficiency η of 37%. The Q-switched laser generated a maximum average output power of 0.70 W at 1913 nm. The pulse energy and duration were 3.5 μJ and 223 ns, respectively, at a repetition rate of 200 kHz. The Sb2Te3 SAs are promising for passively Q-switched waveguide lasers at ∼2 μm.