Raghava P. Panguluri

Ferromagnetism and spin-polarized charge carriers in In2 O3 thin films

We present evidence for spin-polarized charge carriers in

Andreev reflection and pair-breaking effects at the superconductor/magnetic semiconductor interface

{\text{In}}_{2}{\text{O}}_{3}

Robust room temperature persistent photoconductivity in polycrystalline indium oxide films

films. Both

Disorder effects in half-metallic Sr2FeMoO6 single crystals

{\text{In}}_{2}{\text{O}}_{3}

Measurement of spin polarization by Andreev reflection in ferromagnetic In1−xMnxSb epilayers

and Cr doped

Double Percolation Transition in Superconductor/Ferromagnet Nanocomposites

{\text{In}}_{2}{\text{O}}_{3}

Inelastic scattering and spin polarization in dilute magnetic semiconductor (Ga,Mn)Sb

films exhibit room-temperature ferromagnetism after vacuum annealing, with a saturation moment reaching approximately

On the half-metallicity of Co2FeSi Heusler alloy: Point-contact Andreev reflection spectroscopy and ab initio study

0.5\text{ }\text{emu}/{\text{cm}}^{3}

Half-Metallicity in Europium Oxide Conductively Matched with Silicon

for the Cr doped samples. We used point contact Andreev reflection measurements to directly determine the spin polarization, which was found to be approximately

Point contact spin spectroscopy of ferromagnetic MnAs epitaxial films

50%\ifmmode\pm\else\textpm\fi{}5%