Raghuveer S. Makala

Bottom electrodes for use with metal oxide resistivity switching layers

Compact three dimensional vertical nand and method of making thereof

Method of making a vertical nand device using sequential etching of multilayer stacks

Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device

Three dimensional nand device with semiconductor, metal or silicide floating gates and method of making thereof

High aspect ratio memory hole channel contact formation

Non-volatile storage with metal oxide switching element and methods for fabricating the same

COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN A MEMORY STRUCTURE

Methods of fabricating a three-dimensional non-volatile memory device

Memory cell with resistance-switching layers