Rajasekhar Venigalla

FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node

We report FDSOI devices with a 20nm gate length (L_G) and 5nm spacer, featuring a 20% tensile strained Silicon-on-Insulator (sSOI) channel NFET and 35% [Ge] partially compressive strained SiGe-on-Insulator (SGOI) channel PFET. This work represents the first demonstration of strain reversal of sSOI by SiGe in short channel devices. At V_dd of 0.75V, competitive effective current (I_eff) reaches 550/340 μA/μm for NFET, at I_off of 100/1 nA/μm, respectively. With a fully strained 30% SGOI channel on thin BOX (20nm) substrate and V_dd of 0.75V, PFET I_eff reaches 495/260 μA/μm, at I_off of 100/1 nA/μm, respectively. Competitive sub-threshold slope and DIBL are reported. With the demonstrated advanced strain techniques and short channel performance, FDSOI devices can be extended for both high performance and low power applications to the 10nm node.

Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT

Low Ge content SiGe-based CMOS FinFET is one of the promising technologies [1-2] offering solutions for both high performance and low power applications. In this paper, we established a competitive SiGe-based CMOS FinFET baseline and examined various elements for high performance offering. The performance elements in gate stack, channel doping, contact resistance, and junction have been explored to provide a cumulative 20% / 25% (n/pFET) performance enhancement. These elements provide a viable path towards performance enhancement for future technology nodes.

Challenges in 65nm Poly, RX and STI Defect Learning

During manufacturing transitioning from 90 nm to 65 nm node in IBMs 300 mm fab, FEOL (front end of line) defect pareto shifted as a result of the changes in integration scheme. By combining the optically based in-line inspection and electrical kerf test, key yield detractors were identified and addressed. Not all optically detected defects are true killers. Wafer functional test and physical failure analysis provided the ultimate determination for the significance of detractors.