Rajesh Kumar Ulaganathan

Detection of K+ Efflux from Stimulated Cortical Neurons by an Aptamer-Modified Silicon Nanowire Field-Effect Transistor

The concentration gradient of K+ across the cell membrane of a neuron determines its resting potential and cell excitability. During neurotransmission, the efflux of K+ from the cell via various channels will not only decrease the intracellular K+ content but also elevate the extracellular K+ concentration. However, it is not clear to what extent this change could be. In this study, we developed a multiple-parallel-connected silicon nanowire field-effect transistor (SiNW-FET) modified with K+-specific DNA-aptamers (aptamer/SiNW-FET) for the real-time detection of the K+ efflux from cultured cortical neurons. The aptamer/SiNW-FET showed an association constant of (2.18 ± 0.44) × 106 M-1 against K+ and an either less or negligible response to other alkali metal ions. The α-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid (AMPA) stimulation induced an outward current and hyperpolarized the membrane potential in a whole-cell patched neuron under a Na+/K+-free buffer. When neurons were placed atop the aptamer/SiNW-FET in a Na+/K+-free buffer, AMPA (13 μM) stimulation elevated the extracellular K+ concentration to ∼800 nM, which is greatly reduced by 6,7-dinitroquinoxaline-2,3-dione, an AMPA receptor antagonist. The EC50 of AMPA in elevating the extracellular K+ concentration was 10.3 μM. By stimulating the neurons with AMPA under a normal physiological buffer, the K+ concentration in the isolated cytosolic fraction was decreased by 75%. These experiments demonstrate that the aptamer/SiNW-FET is sensitive for detecting cations and the K+ concentrations inside and outside the neurons could be greatly changed to modulate the neuron excitability.

Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~ 239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~ 154 meV/% for uniaxial tensile strain and ~ 140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in two-dimensional materials.We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

Ambipolar field-effect transistors by few-layer InSe with asymmetry contact metals

Group IIIA−VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te) have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties. In this study, we demonstrated that metal and InSe junctions can lead to carrier behaviors in few-layered InSe FETs. These results indicate that the polarity of few-layered InSe FETs can be determined by using metals with different work functions. We adopted FET S/D metal contacts with asymmetric work functions to reduce the Schottky barriers of electrons and holes, and discovered that few-layered InSe FETs with carefully selected metal contacts can achieve ambipolar behaviors. These results indicate that group IIIA−VIA layered semiconductor FETs with asymmetry contact metals have great potential for applications in photovoltaic devices, optical sensors, and CMOS inverter circuits.

Enhanced Light Emission from the Ridge of Two-dimensional InSe Flakes

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct-band-gap semiconductor with high mobility from bulk to atomically thin layers and is drastically different from transition-metal dichalcogenides, in which the direct band gap only exists at the single-layer limit. However, absorption in InSe is mostly dominated by an out-of-plane dipole contribution, which results in the limited absorption of normally incident light that can only excite the in-plane dipole at resonance. To address this challenge, we have explored a unique geometric ridge state of the 2D flake without compromising the sample quality. We observed the enhanced absorption at the ridge over a broad range of excitation frequencies from photocurrent and photoluminescence (PL) measurements. In addition, we have discovered new PL peaks at low temperatures due to defect states on the ridge, which can be as much as ∼60 times stronger than the intrinsic PL peak of InSe. Interestingly, the PL of the defects is highly tunable through an external electrical field, which can be attributed to the Stark effect of the localized defects. InSe ridges thus provide new avenues for manipulating light-matter interactions and defect engineering that are vitally crucial for novel optoelectronic devices based on 2D semiconductors.

One-Step Synthesis of Antioxidative Graphene-Wrapped Copper Nanoparticles on Flexible Substrates for Electronic and Electrocatalytic Applications

In this study, we report a novel, one-step synthesis method to fabricate multilayer graphene (MLG)-wrapped copper nanoparticles (CuNPs) directly on various substrates (e.g., polyimide film (PI), carbon cloth (CC), or Si wafer (Si)). The electrical resistivities of the pristine MLG-CuNPs/PI and MLG-CuNPs/Si were measured 1.7 × 10-6 and 1.4 × 10-6 Ω·m, respectively, of which both values are ∼100-fold lower than earlier reports. The MLG shell could remarkably prevent the Cu nanocore from serious damages after MLG-CuNPs being exposed to various harsh conditions. Both MLG-CuNPs/PI and MLG-CuNPs/Si retained almost their conductivities after ambient annealing at 150 °C. Furthermore, the flexible MLG-CuNPs/PI exhibits excellent mechanical durability after 1000 bending cycles. We also demonstrate that the MLG-CuNPs/PI can be used as promising source-drain electrodes in fabricating flexible graphene-based field-effect transistor (G-FET) devices. Finally, the MLG-CuNPs/CC was shown to possess high performance and durability toward hydrogen evolution reaction (HER).

Lipid-Modified Graphene-Transistor Biosensor for Monitoring Amyloid-β Aggregation

A graphene field-effect transistor (G-FET) with the spacious planar graphene surface can provide a large-area interface with cell membranes to serve as a platform for the study of cell membrane-related protein interactions. In this study, a G-FET device paved with a supported lipid bilayer (referred to as SLB/G-FET) was first used to monitor the catalytic hydrolysis of the SLB by phospholipase D. With excellent detection sensitivity, this G-FET was also modified with a ganglioside GM1-enriched SLB (GM1-SLB/G-FET) to detect cholera toxin B. Finally, the GM1-SLB/G-FET was employed to monitor amyloid-beta 40 (Aβ40) aggregation. In the early nucleation stage of Aβ40 aggregation, while no fluorescence was detectable with traditional thioflavin T (ThT) assay, the prominent electrical signals probed by GM1-SLB/G-FET demonstrate that the G-FET detection is more sensitive than the ThT assay. The comprehensive kinetic information during the Aβ40 aggregation could be collected with a GM1-SLB/G-FET, especially covering the kinetics involved in the early stage of Aβ40 aggregation. These experimental results suggest that SLB/G-FETs hold great potential as a powerful biomimetic sensor for versatile investigations of membrane-related protein functions and interaction kinetics.