Rajiv Vaidya

High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method

Single crystals of MoS2 and MoSe2 were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6.5 GPa to identify occurrence of any structural transition. MoS2 and MoSe2 do not undergo any structural transitions under pressure.

X-ray diffraction studies of NbTe2 single crystal

NbTe2 is a member of transition metal dichalcogenide (TMDC) group. Single crystals of niobium ditelluride (NbTe2) have been grown by a chemical vapour transport technique using iodine as transporting agent. The composition of the grown crystals was confirmed on the basis of energy dispersive analysis by X-ray (EDAX) and remaining structural characterization was also accomplished by X-ray diffraction (XRD) studies. Lattice parameters, volume and X-ray density have been carried out for the grown crystals. The particle size for a number of reflections has been calculated using Scherrer’s formula.

Growth of molybdenum disulphide using iodine as transport material

In the present paper an attempt has been made to describe the chemical vapor transport (CVT) technique used for the growth of molybdenum disulphide (MoS2) single crystals. Iodine (I2) is used as transporting material for this purpose. The energy dispersive analysis by X-ray (EDAX) confirmed the stoichiometry of the as-grown crystals. The lattice parameters of these crystals were determined from the X-ray diffraction analysis. The grown crystals were examined under the optical zoom microscope for their surface microstructure study.

Effect of pressure on electrical properties of SnS x Se1−x single crystals

The single crystals of tin monosulphoselenides in the form of a series SnS x Se1−x (where x = 0, 0.25, 0.50,0.75 and 1) have been grown using the direct vapor transport technique (DVT). The analysis of the X-ray diffraction patterns reveals that all crystals belong to the orthorhombic crystal structure. Hall effect measurements were carried out on grown crystals at room temperature. The optical absorption measurements at room temperature have been carried out for all crystals. The values of the band gap were determined at atmospheric pressure and also calculated at high-pressure. Simultaneous thermoelectric power (TEP) and a.c. resistance measurements up to 8 GPa were carried out. The results of the effect of high-pressure on the electrical resistance of the grown crystals are reported in this paper.

Optical and electrical properties of ZrSe3 single crystals grown by chemical vapour transport technique

Single crystals of the lamellar compound, ZrSe3, were grown by chemical vapour transport technique using iodine as a transporting agent. The grown crystals were characterized with the help of energy dispersive analysis by X-ray (EDAX), which gave confirmation about the stoichiometry. The optical band gap measurement of as grown crystals was carried out with the help of optical absorption spectra in the range 700–1450 nm. The indirect as well as direct band gap of ZrSe3 were found to be 1.1 eV and 1.47 eV, respectively. The resistivity of the as grown crystals was measured using van der Pauw method. The Hall parameters of the grown crystals were determined at room temperature from Hall effect measurements. Electrical resistivity measurements were performed on this crystal in the temperature range 303–423 K. The crystals were found to exhibit semiconducting nature in this range. The activation energy and anisotropy measurements were carried out for this crystal. Pressure dependence of electrical resistance was studied using Bridgman opposed anvils set up up to 8 GPa. The semiconducting nature of ZrSe3 single crystal was inferred from the graph of resistance vs pressure. The results obtained are discussed in detail.

Anisotropic behaviour of semiconducting tin monosulphoselenide single crystals

Single crystals of ternary mixed compounds of group IV-VI in the form of a series, SnSxSe1-x (wherex = 0, 0.25, 0.50, 0.75 and 1), have been grown using direct vapour transport technique. The grown crystals were characterized by the X-ray diffraction analysis for their structural parameter determination. All the grown crystals were found to be orthorhombic. The microstructure analysis of the grown crystals reveals their layered type growth mechanism. From the Hall effect measurements Hall mobility, Hall coefficient and carrier concentration were calculated with all crystals showingp-type nature. The d.c. electrical resistivity measurements perpendicular toc-axis (i.e. along the basal plane) in the temperature range 303–453 K were carried out for grown crystals using four-probe method. The d.c. electrical resistivity measurements parallel to c-axis (i.e. perpendicular to basal plane) in the temperature range 303–453 K were carried out for the same crystals. The electrical resistivity measurements showed an anisotropic behaviour of electrical resistivity for the grown crystals. The anisotropic behaviour and the effect of change in stoichiometric proportion of S and Se content on the electrical properties of single crystals of the series, SnSxSe1-x (wherex = 0, 0.25, 0.50, 0.75 and 1), is presented systematically.

Electrical resistance measurements under pressure on NbTe2 single crystal

Transition metal dichalcogenides, because of their layered structure, are well suited for extreme pressure lubrication. These materials being semiconducting and of layered structure may undergo structural and electronic transitions under pressure. Here we report the details of the preparation and characterization of single crystals of NbTe2 and the results of electrical resistance measurements under pressure carried out on it to investigate this possibility. Single crystals were grown by the chemical vapor transport technique, using iodine as a transporting agent. The composition of the grown crystals was confirmed on the basis of Energy Dispersive Analysis by X-ray (EDAX) and remaining structural characterization was also accomplished by X-ray Diffraction (XRD) studies. Electrical resistance was measured employing a Bridgman anvil set up to 10 GPa and diamond anvil cell (DAC) assembly up to 25 GPa. A technique slightly modified from that described in the literature for carrying out electrical resistivity measurements in the diamond anvil cell (DAC) under pressure has been standardized.

Effect of pressure on electrical resistance of WSe2 single crystal

The results of electrical resistance measurements under pressure on single crystals of WSe2 are reported. Measurements up to 8.5 GPa are carried out using Bridgman anvil set up and beyond it using diamond anvil cell (DAC) up to a pressure of 27 GPa. There is no clear indication of any phase transition till the highest pressure is reached in these measurements.