Ralph M. Potter

Silicon Carbide Light‐Emitting Diodes

Electroluminescent diodes were prepared by the simultaneous diffusion of boron and aluminum at 2150° to 2250°C into nitrogen‐doped, n‐type 6H SiC crystals. These diodes exhibit a typical brightness of 50 ft·L (170 nit) at a current density of 5 A/cm2 for temperatures of 25° to above 200°C. The results of various measurements on these diodes are presented and the anomalous nature of the diffusion is discussed.

Cathodoluminescence Measurements on a Silicon Carbide Light‐Emitting Diode

From cathodoluminescence measurements on a diffused SiC diode with the p layer removed, it has been possible to measure separately the variation of quantum efficiency of radiative recombination in the phosphor layer as a function of injected current density and of temperature. This has allowed a better understanding of the behavior of a diffused SiC diode excited by current flow as well as estimates of some important parameters.