Ramón J. Peláez

Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model.

Laser treatment of Ag@ZnO nanorods as long-life-span SERS surfaces.

UV nanosecond laser pulses have been used to produce a unique surface nanostructuration of Ag@ZnO supported nanorods (NRs). The NRs were fabricated by plasma enhanced chemical vapor deposition (PECVD) at low temperature applying a silver layer as promoter. The irradiation of these structures with single nanosecond pulses of an ArF laser produces the melting and reshaping of the end of the NRs that aggregate in the form of bundles terminated by melted ZnO spherical particles. Well-defined silver nanoparticles (NPs), formed by phase separation at the surface of these melted ZnO particles, give rise to a broad plasmonic response consistent with their anisotropic shape. Surface enhanced Raman scattering (SERS) in the as-prepared Ag@ZnO NRs arrays was proved by using a Rhodamine 6G (Rh6G) chromophore as standard analyte. The surface modifications induced by laser treatment improve the stability of this system as SERS substrate while preserving its activity.

2D plasmonic and diffractive structures with sharp features by UV laser patterning

The aim of this work is to produce 2D plasmonic and diffractive structures in Ag films with sharp features for which both a deeper understanding of laser induced transformation upon modulated laser intensity and a correlation between structural and optical properties are required. We compare results obtained by exposing silver films to an excimer laser operating at 193 nm whose intensity is either modulated or homogeneous. In all cases, one laser exposure is enough to break the film into nanoparticles (NPs). The use of the modulated beam intensity leads to diffractive 2D patterns that are formed by rectangular regions of untransformed material surrounded by transformed regions covered by NPs. The former have sharp edges that are consistent with the absence of significant mass transport that is discussed in terms of the thermal gradient induced. The latter contain NPs whose diameter increases as the initial film effective thickness increases. The surface plasmons associated with the NPs in the transformed regions dominate the reflectivity spectrum and the 2D array formed by the untransformed regions is responsible for the diffractive properties. Evidence for spinodal dewetting is only observed in our case for the steep gradient conditions achieved at the border of the homogeneously irradiated regions.

Stark widths of Xe II lines in a pulsed plasma

In this paper, we present a review of experimental work on Stark broadening of singly ionized xenon lines. Eighty lines, from close UV to the red region of the spectrum, have been studied. Stark halfwidths were compared with experimental data from the literature and modified semi-empirical calculations. A pulsed arc with 95% of helium and 5% xenon was used as a plasma source for this study. Measured electron densities Ne and temperatures T were in the ranges of 0.2–1.6 × 10 23 m −3 and 18 300–25 500 K, respectively.

Dynamics of laser induced metal nanoparticle and pattern formation

Discontinuous metal films are converted into either almost round, isolated, and randomly distributed nanoparticles (NPs) or fringed patterns of alternate non transformed film and NPs by exposure to single pulses (20 ns pulse duration and 193 nm wavelength) of homogeneous or modulated laser beam intensity. The dynamics of NPs and pattern formation is studied by measuring in real time the transmission and reflectivity of the sample upon homogeneous beam exposure and the intensity of the diffraction orders 0 and 1 in transmission configuration upon modulated beam exposure. The results show that laser irradiation induces melting of the metal either completely or at regions around intensity maxima sites for homogeneous and modulated beam exposure, respectively, within ≤10 ns. The aggregation and/or coalescence of the initially irregular metal nanostructures is triggered upon melting and continues after solidification (estimated to occur at ≤80 ns) for more than 1 μs. The present results demonstrate that real t...

Photodetachment microscopy to an excited spectral term and the electron affinity of phosphorus

A beam of P− ions produced by a cesium sputtering ion source was photodetached in the presence of an electric field, with a single-mode ring dye laser. Neutral P can be produced at one or the other of the fine-structure sub-levels of its 3s23p3 2Do excited term. This is the first atomic photodetachment microscopy experiment with excitation of the parent neutral atom out of the fundamental spectral term. The background electron signal due to ground-state photodetachment notwithstanding, photodetachment microscopy images produced at the excited thresholds could be analysed to provide a measure of these excited-term thresholds with interferometric precision. Starting from the three possible fine-structure sub-levels of P− 3s23p4 3P, the five fine-structure thresholds that may be detected, taking the selection rules into account, have been measured. They are combined with the spectroscopic data available in the literature on neutral P to produce an improved experimental value of the electron affinity eA of phosphorus: 602 179(8) m−1 or 0.746 607(10) eV. Taking all covariances of the optimized energy levels into account, one can merge them with the former measure of the three lowest detachment thresholds of P−, which results in a slightly more precise value of eA(P): 602 181(8) m−1, or 0.746 609(9) eV. The accuracy of eA(P) is now essentially limited by the uncertainty on the 2Do3/2 and 2Do5/2 energy levels of the neutral atom. The fine-structure intervals of the 3s23p3 2Do doublet of the neutral atom and of the 3s23p4 3P triplet of the negative ion have their accuracy improved by more than one order of magnitude.

Period dependence of laser induced patterns in metal films

Periodic fringed patterns with four periods in the range 1.8-10.2 μm have been produced in continuous Ag films that have thicknesses of 14.6 nm and 19.5 nm by exposing a phase mask to single pulses of an excimer laser operating at 193 nm. The films were patterned either as-grown or after homogeneous exposure to the same laser beam. For fluences above the threshold, the films undergo liquid-state dewetting that, from low to high fluences, leads to their break into holes, fingers or elongated features and finally to isolated nanoparticles irrespective of the period, thickness or fluence. The period determines the range of fluences to achieve the different morphologies since the temperature profile across the pattern depends on the period due to the existence of significant lateral heat flow across the pattern. The maximum temperature achieved at the intensity maxima/minima sites thus decreases/increases as the period decreases, leading to solid-state dewetting at regions around the intensity minima; the shorter the period, the higher this type of dewetting. These regions eventually overcome the melting temperature for the shortest period and intermediate fluence, leading to the complete transformation of the films. Finally, the initial film morphology (discontinuities or holes) rather than thickness plays an essential role in the level of transformation at fluences around the threshold.

Ultraviolet laser patterning of porous silicon

This work reports on the fabrication of 1D fringed patterns on nanostructured porous silicon (nanoPS) layers (563, 372, and 290 nm thick). The patterns are fabricated by phase-mask laser interference using single pulses of an UV excimer laser (193 nm, 20 ns pulse duration). The method is a single-step and flexible approach to produce a large variety of patterns formed by alternate regions of almost untransformed nanoPS and regions where its surface has melted and transformed into Si nanoparticles (NPs). The role of laser fluence (5–80 mJ cm−2), and pattern period (6.3–16 μm) on pattern features and surface structuring are discussed. The results show that the diameter of Si NPs increases with fluence up to a saturation value of 75 nm for a fluence ≈40 mJ cm−2. In addition, the percentage of transformed to non-transformed region normalized to the pattern period follows similar fluence dependence regardless the period and thus becomes an excellent control parameter. This dependence is fitted within a thermal...

Stark broadening measurements of Xe III spectral lines

This work reports measured Stark widths of doubly ionized xenon lines. Pulsed arc was used as a plasma source. Measured electron densities and temperatures were in the ranges of (0.2 – 1.6) × 10 23 m −3 and 18 300–25 500 K, respectively. Stark halfwidths of lines from 6s–6p, 6s–4f and 5d–6p transitions have been measured and compared with available experimental and theoretical data.

Laser ablation of ceramic Al2O3 at 193 nm and 248 nm: The importance of single-photon ionization processes

The aim of this work is to demonstrate that single-photon photoionization processes make a significant difference in the expansion and temperature of the plasma produced by laser ablation of ceramic Al2O3 in vacuum as well as to show their consequences in the kinetic energy distribution of the species that eventually will impact on the film properties produced by pulsed laser deposition. This work compares results obtained by mass spectrometry and optical spectroscopy on the composition and features of the plasma produced by laser ablation at 193 nm and 248 nm, i.e., photon energies that are, respectively, above and below the ionization potential of Al, and for fluences between threshold for visible plasma and up to ≈2 times higher. The results show that the ionic composition and excitation of the plasma as well as the ion kinetic energies are much higher at 193 nm than at 248 nm and, in the latter case, the population of excited ions is even negligible. The comparison of Maxwell-Boltzmann temperature, el...