Randolph E. Elmquist

NBS determination of the fine-structure constant, and of the quantized Hall resistance and Josephson frequency-to-voltage quotient in SI units

Results of US National Bureau of Standards (NBS) experiments to realize the ohm and the watt, to determine the proton gyromagnetic ratio by the low-field method, to determine the time dependence of the NBS representation of the ohm using the quantum Hall effect, and to maintain the NBS representation of the volt using the Josephson effect, are appropriately combined to obtain an accurate value of the fine-structure constant and of the quantized Hall resistance in SI units, and values in SI units of the Josephson frequency-to-voltage quotient, Planck constant and elementary charge. >

Determination of the von Klitzing constant and the fine-structure constant through a comparison of the quantized Hall resistance and the ohm derived from the NIST calculable capacitor

This paper describes a recent determination of the von Klitzing constant and the fine-structure constant by comparisons of values of the ohm as defined in the International System of Units (SI), derived from the National Institute of Standards and Technology (NIST) calculable cross-capacitor, and values of the international practical unit of resistance derived from the integral quantum Hall effect. In this determination, the comparisons were made in a series of measurements lasting three years. A small difference is observed between this determination and an earlier comparison carried out in this laboratory and reported in 1988. The most recent value of the fine-structure constant based on the experimental value and theoretical expression for the magnetic moment anomaly of the electron, which has the smallest uncertainty of any value currently available, is consistent with both of these results. The new value exceeds the 1990 conventional value of the von Klitzing constant RK-90 by slightly more than twice the relative standard uncertainty of the present measurement, which is 2.4 × 10-8.

NIST comparison of the quantized Hall resistance and the realization of the SI ohm through the calculable capacitor

The latest NIST result from the comparison of the quantized Hall resistance (QHR) with the realization of the SI ohm obtained from the NIST calculable capacitor is reported. A small difference between the 1988 result and the present result has led to a re-evaluation of the sources and magnitudes of possible systematic errors.

NIST Measurement Service for DC Standard Resistors

At the National Institute of Standards and Technology (NIST), the U.S. representation of the ohm is based on the quantum Hall effect, and it is maintained and disseminated at various resistance levels by working reference groups of standards. This document describes the measurement systems and procedures used to calibrate standard resistors and current shunts of nominal decade values in the resistance range from 10 Ω to 10 Ω. Resistance scaling techniques used to assign values to the working standards are discussed. Also included is an assessment of the calibration uncertainties at each resistance level.

Low Carrier Density Epitaxial Graphene Devices On SiC

The transport characteristics of graphene devices with low n- or p-type carrier density (∼10(10) -10(11) cm(-2) ), fabricated using a new process that results in minimal organic surface residues, are reported. The p-type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T.

A measurement of the NBS electrical watt in SI units

The National Bureau of Standards (NBS) electric watt in SI units to be: W/sub NBS//W=K/sub W/=1-(16.69+or-1.33) p.p.m. The uncertainty of 1.33 p.p.m. has the significance of a standard deviation and includes the best estimate of random and known or suspected systematic uncertainties. The mean time of the measurement is May 15, 1988. Combined with the measurement of the NBS ohm in SI units: Omega /sub NBS// Omega =K/sub Omega /=1-(1.593+or-0.022) p.p.m., this leads to a Josephson frequency/voltage quotient of E/sub J/=E/sub 0/(1+(7.94+or-0.67) p.p.m.) where E/sub 0/=483, 594 GHz/V. >

Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

We report observations of well developed half integer quantum Hall effect on mono layer graphene films of 7 mm × 7 mm in size. The graphene films are grown by chemical vapor deposition on copper, then transferred to SiO2/Si substrates, with typical carrier mobilities ≈4000 cm2/Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene.

Precision Tests of a Quantum Hall Effect Device DC Equivalent Circuit Using Double-Series and Triple-Series Connections

Precision tests verify the dc equivalent circuit used by Ricketts and Kemeny to describe a quantum Hall effect device in terms of electrical circuit elements. The tests employ the use of cryogenic current comparators and the double-series and triple-series connection techniques of Delahaye. Verification of the dc equivalent circuit in double-series and triple-series connections is a necessary step in developing the ac quantum Hall effect as an intrinsic standard of resistance.

Monitoring the mass standard via the comparison of mechanical to electrical power

An ongoing absolute watt experiment that shows the promise of being able to monitor the stability of the kilogram standard to better than 0.05 p.p.m. is discussed. The theory is presented, and the latest improvements to the experimental apparatus are briefly described. >

Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices

Quantized magnetotransport is observed in 5.6 × 5.6 mm2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of [Formula: see text] is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point (n ≈ 1010 cm-2), where mobility of 18760 cm2/V is measured over an area of 10 mm2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications.