Ranjan Datta

MoS2 and WS2 analogues of graphene.

Following the discovery of fullerenes in 1985, it was soon recognized that inorganic layered materials such as MoS2 and WS2 can also form fullerene-like structures. [2] After the discovery of carbon nanotubes, inorganic nanotubes analogous to carbon nanotubes were prepared and characterized, nanotubes of MoS2 and WS2 being archetypal examples. [4] With the discovery and characterization of graphene, that is, two-dimensional nanocarbon, which has created great interest in last few years, it would seem natural to explore the synthesis of graphene analogues of layered inorganic materials such as dichalcogenides of molybdenum and tungsten. We aim to prepare graphene-like MoS2 and WS2, which are quasi-two-dimensional compounds in which the atoms within the layer are held together by strong covalent forces while van der Waals interaction enables stacking of the layers. Synthesis of crystals of MoS2 containing several molecular layers by micromechanical cleavage has been reported, and optical absorption and photoconductivity of these films have been studied. There is also a report on the intercalation of alkali metals with layered metal dichalcogenide crystals with controlled stoichiometry, but the products of exfoliation were not examined in this study. There is an early report on graphene-like MoS2 prepared by lithium intercalation and exfoliation, but the material was characterized only by X-ray diffraction, which is not sufficient to determine the exact nature and number of layers. Attempts were made to prepare single layers of WS2 by lithium intercalation and exfoliation as well, 12] but here again the product was only characterized on the basis of the (002) reflection in the X-ray diffraction pattern. Schumacher et al. and Gordon et al. prepared MoS2 samples by lithium intercalation followed by exfoliation and characterized the products by means of scanning force microscopy and X-ray absorption fine structure spectroscopy. Yang et al. report that the exfoliated MoS2 forms aqueous suspensions of single layers wherein sulfur atoms are bonded with molybdenum in an octahedral arrangement with 2a0 superlattice. Suspensions of layered chalcogenides have also been used to prepare inclusion compounds of various organic molecules and to fabricate light-emitting diodes. Since even MoS2 and WS2 containing five layers do not exhibit the (002) reflection prominently, layered MoS2 and WS2 produced by lithium intercalation and exfoliation must be investigated by transmission electron microscopy and other techniques. Furthermore, it seems desirable to explore alternative syntheses of these graphene-like materials. To this end, we employed three different methods to synthesize graphenelike MoS2 and WS2. In Method 1, bulk MoS2 and WS2 were intercalated with lithium and exfoliated in water. The reaction between lithium-intercalated MoS2 and WS2 and water forms lithium hydroxide and hydrogen gas and leads to separation of the sulfide layers and loss of periodicity along the c axis. In Method 2, molybdic acid and tungstic acid were treated with an excess of thiourea in an N2 atmosphere at 773 K. Method 3 involved the reaction between MoO3 and KSCN under hydrothermal conditions. The products of these reactions were characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), Raman spectroscopy, and X-ray diffraction (XRD). The XRD patterns of the molybdenum sulfide samples obtained by the three methods do not exhibit the (002) reflection (Figure 1a). Energy-dispersive analysis of X-rays (EDAX) shows the products to be stoichiometric MoS2. The TEM and AFM images of the products show the presence of one or a few layers of MoS2 (Figures 2 and 3). Figure 2 a and b show graphene-like MoS2 layers obtained by methods 2 and 3 with a layer separation in the range of 0.65–0.7 nm. The highresolution image in Figure 2c shows the hexagonal structure formed by Mo and S atoms with an Mo S distance of 2.30 . The AFM images and height profiles of the products also confirm the formation of few-layer MoS2 (Figure 3a). Figure 4a compares the Raman spectra of graphene-like MoS2 samples with that of bulk MoS2. The bulk sample shows bands at 406.5 and 381.2 cm 1 due to the A1g and E2g modes with fullwidths at half maximum (FWHM) of 2.7 and 3.1 cm , respectively. Interestingly, few-layered MoS2 prepared by lithium intercalation exhibits corresponding bands at 404.7 and 379.7 cm . The sample obtained by Method 2 show these bands at 404.7 and 377.4 cm . The A1g and E2g modes in the graphene analogues of MoS2 are clearly softened. Furthermore, the FWHM values are larger in the graphene-like samples (10–16 cm 1 vs. ca. 3 cm 1 in the bulk sample). Broadening of the Raman bands is considered to be due to phonon confinement, and also suggests that the lateral dimensions of these layers are in the nanoregime. We also prepared graphene-like MoS2 by micromechanical cleavage of a MoS2 single crystal using the Scotch-tape technique. Raman spectra of these samples show progressive softening of the A1g and E2g bands with decreasing number of layers. [*] H. S. S. Ramakrishna Matte, A. Gomathi, A. K. Manna, Dr. D. J. Late, Dr. R. Datta, Prof. Dr. S. K. Pati, Prof. Dr. C. N. R. Rao Chemistry and Physics of Materials Unit, Theoretical Science Unit and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research Jakkur P.O., Bangalore 560 064 (India) Fax: (+ 91)80-2208-2760 E-mail: cnrrao@jncasr.ac.in Angewandte Chemie

Graphene Analogues of BN: Novel Synthesis and Properties

Enthused by the fascinating properties of graphene, we have prepared graphene analogues of BN by a chemical method with a control on the number of layers. The method involves the reaction of boric acid with urea, wherein the relative proportions of the two have been varied over a wide range. Synthesis with a high proportion of urea yields a product with a majority of 1-4 layers. The surface area of BN increases progressively with the decreasing number of layers, and the high surface area BN exhibits high CO(2) adsorption, but negligible H(2) adsorption. Few-layer BN has been solubilized by interaction with Lewis bases. We have used first-principles simulations to determine structure, phonon dispersion, and elastic properties of BN with planar honeycomb lattice-based n-layer forms. We find that the mechanical stability of BN with respect to out-of-plane deformation is quite different from that of graphene, as evident in the dispersion of their flexural modes. BN is softer than graphene and exhibits signatures of long-range ionic interactions in its optical phonons. Finally, structures with different stacking sequences of BN have comparable energies, suggesting relative abundance of slip faults, stacking faults, and structural inhomogeneities in multilayer BN.

Highly Effective Visible-Light-Induced H2Generation by Single-Layer 1T-MoS2and a Nanocomposite of Few-Layer 2H-MoS2with Heavily Nitrogenated Graphene

Two sorts of MoS2 : A single-layer, metallic form of MoS2 (1T-MoS2 ) and a nanocomposite of a second form of MoS2 (few-layer 2H-MoS2 ) with heavily nitrogenated reduced graphene oxide (NRGO; N content ca. 15 %) show outstanding performance in the production of H2 under visible-light illumination.

BCN: A Graphene Analogue with Remarkable Adsorptive Properties

A new analogue of graphene containing boron, carbon and nitrogen (BCN) has been obtained by the reaction of high-surface-area activated charcoal with a mixture of boric acid and urea at 900 degrees C. X-ray photoelectron spectroscopy and electron energy-loss spectroscopy reveal the composition to be close to BCN. The X-ray diffraction pattern, high-resolution electron microscopy images and Raman spectrum indicate the presence of graphite-type layers with low sheet-to-sheet registry. Atomic force microscopy reveals the sample to consist of two to three layers of BCN, as in a few-layer graphene. BCN exhibits more electrical resistivity than graphene, but weaker magnetic features. BCN exhibits a surface area of 2911 m(2) g(-1), which is the highest value known for a B(x)C(y)N(z) composition. It exhibits high propensity for adsorbing CO(2) ( approximately 100 wt %) at 195 K and a hydrogen uptake of 2.6 wt % at 77 K. A first-principles pseudopotential-based DFT study shows the stable structure to consist of BN(3) and NB(3) motifs. The calculations also suggest the strongest CO(2) adsorption to occur with a binding energy of 3.7 kJ mol(-1) compared with 2.0 kJ mol(-1) on graphene.

High thermoelectric performance in tellurium free p-type AgSbSe2

Enhanced electrical transport and ultra low thermal conductivity resulted in a high thermoelectric figure of merit, ZT, of ∼1 and ∼1.15 at ∼680 K in 4 mol% Pb and 2 mol% Bi doped AgSbSe2, which are 150 and 190% higher compared to that of the pristine sample, respectively. With this excellent thermoelectric performance, p-type AgSbSe2, constituting earth abundant Se, offers promise to replace traditional metal tellurides containing expensive and scarce Te for mid temperature (350–700 K) thermoelectric applications.

The origin of low thermal conductivity in Sn1−xSbxTe: phonon scattering via layered intergrowth nanostructures

Inorganic solids with low thermal conductivity are of great interest for thermoelectric applications. The formation of synthetic nanostructures by matrix encapsulation is one of the important strategies for thermal conductivity reduction through phonon scattering. Here, we report the reduction of lattice thermal conductivity near the theoretical minimum limit, κmin, in SnTe via spontaneous formation of nanodomains of the Sb-rich layered intergrowth SnmSb2nTe3n+m compounds, which are natural heterostructures. High-resolution transmission electron microscopy of Sn1−xSbxTe samples reveals the formation of endotaxial Sb rich nanoprecipitates (2–10 nm) along with super-structured intergrowth nanodomains (10–30 nm), which are the key features responsible for the significant reduction of lattice thermal conductivity in SnTe. This mechanism suggests a new avenue for the nanoscale engineering in SnTe to achieve low lattice thermal conductivities. Moreover, the presence of Sb improves the electronic transport properties by aliovalent cation doping which optimizes the hole concentration in SnTe. As a result, an enhanced thermoelectric figure of merit, zT, of ∼1 has been achieved for the composition of Sn0.85Sb0.15Te at 800 K. The high zT sample exhibits the Vickers microhardness value of ∼136 HV which is double that of pristine SnTe and is significantly higher than those of the present state-of-the-art thermoelectric materials.

Graphene analogues of layered metal selenides

Graphene analogues of MoSe(2) and WSe(2) have been prepared by three different chemical methods and characterized by electron microscopy and other methods. Graphene analogues of these diselenides as well as of GaSe have also been obtained by liquid-phase exfoliation. Raman spectra of the graphene analogues show significant changes relative to those of the bulk samples.

Raman studies of cation distribution and thermal stability of epitaxial spinel NiCo2O4 films

Epitaxial thin films of spinel NiCo2O4 (NCO) grown on MgAl2O4 (001) substrates are reported to exhibit dramatic changes in the magnetic and transport properties with deposition temperature. While films grown at lower temperatures (<450°C) are ferrimagnetic with metallic characteristics, those grown at higher temperatures are non-magnetic and insulating. Detailed polarized Raman spectroscopy studies indicate that the higher temperature films have close to the ideal inverse spinel cation distribution, Co3+[Ni2+Co3+]O42−, whereas those deposited at lower temperature are characterized by mixed cation/charge distribution at both the tetragonal (A) and octahedral (B) sites. Additionally, temperature-dependent Raman studies demonstrate that, unlike bulk polycrystalline samples, all the NCO films are robust against thermal treatment with full reversibility after annealing at 600°C in oxygen and air. However, partial decomposition is observed after annealing in vacuum.

Nanostructuring, carrier engineering and bond anharmonicity synergistically boost the thermoelectric performance of p-type AgSbSe2–ZnSe

Thermoelectric “waste heat-to-electrical energy” generation is an efficient and attractive option for robust and environmentally friendly renewable energy production. Simultaneous tailoring of interdependent thermoelectric parameters, i.e. electrical conductivity, thermopower and thermal conductivity, to improve the thermoelectric figure of merit is the utmost challenge in this field. Another important aspect is to develop high performance materials based on cheap and earth abundant materials. We have chosen AgSbSe2, a homologue of AgSbTe2 containing earth abundant selenium, as a model system for thermoelectric investigation due to its low thermal conductivity and favourable valence band structure. Herein, we show that by integrating different but synergistic concepts: (a) carrier engineering, (b) second phase endotaxial nanostructuring and (c) bond anharmonicity, we can achieve a maximum ZT of ∼1.1 at 635 K in AgSbSe2–ZnSe (2 mol%), which is significantly higher than that of pristine AgSbSe2. The above system therefore offers promise to replace traditional metal tellurides for mid-temperature power generation. We demonstrate a design strategy which provides simultaneous enhancement of electrical transport through optimized doping, superior thermopower by the convergence of degenerate valence bands, and glass-like thermal conductivity due to the effective scattering of phonons by nanostructuring, bond anharmonicity and a disordered cation sublattice.

Formation of antiphase domains in NiFe2O4 thin films deposited on different substrates

Thin films of NiFe2O4 have been deposited on various substrates using pulsed laser deposition and the defect structures investigated by transmission electron microscopy. Owing to the simultaneous nucleation of cation-disordered sites during the nonequilibrium growth, the NiFe2O4 films exhibit antiphase domains of ∼20 nm, irrespective of the substrate symmetry. For growth on isostructural spinel substrates, the density of antiphase appears to decrease with decreasing lattice mismatch. Aberration corrected high resolution transmission electron microscopy reveals that the interchange of equivalent tetrahedral cation positions in the host oxygen sublattice as one of the possible mechanisms leading to the formation of antiphase domains.