Ranjit V. Kashid

Enhanced Field‐Emission Behavior of Layered MoS2 Sheets

Field emission studies are reported for the first time on layered MoS₂ sheets at the base pressure of ∼1 × 10⁻⁸ mbar. The turn-on field required to draw a field emission current density of 10 μA/cm² is found to be 3.5 V/μm for MoS₂ sheets. The turn-on values are found to be significantly lower than the reported MoS₂ nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (∼1138) associated with nanometric sharp edges of MoS₂ sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS₂ could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications.

Remarkably low turn-on field emission in undoped, nitrogen-doped, and boron-doped graphene

Field emission studies have been carried out on undoped as well as N- and B-doped graphene samples prepared by arc-discharge method in a hydrogen atmosphere. These graphene samples exhibit very low turn-on fields. N-doped graphene shows the lowest turn-on field of 0.6 V/μm, corresponding to emission current density of 10 μA/cm2. These characteristics are superior to the other types of nanomaterials reported in the literature. Furthermore, emission currents are stable over the period of more than 3 h for the graphene samples. The observed emission behavior has been explained on the basis of nanometric features of graphene and resonance tunneling phenomenon.

Superior Field Emission Properties of Layered WS2-RGO Nanocomposites

We report here the field emission studies of a layered WS2-RGO composite at the base pressure of ~1 × 10−8 mbar. The turn on field required to draw a field emission current density of 1 μA/cm2 is found to be 3.5, 2.3 and 2 V/μm for WS2, RGO and the WS2-RGO composite respectively. The enhanced field emission behavior observed for the WS2-RGO nanocomposite is attributed to a high field enhancement factor of 2978, which is associated with the surface protrusions of the single-to-few layer thick sheets of the nanocomposite. The highest current density of ~800 μA/cm2 is drawn at an applied field of 4.1 V/μm from a few layers of the WS2-RGO nanocomposite. Furthermore, first-principles density functional calculations suggest that the enhanced field emission may also be due to an overalp of the electronic structures of WS2 and RGO, where graphene-like states are dumped in the region of the WS2 fundamental gap.

Temperature dependent Raman spectroscopy of chemically derived few layer MoS2 and WS2 nanosheets

We have systematically investigated the temperature dependent Raman spectroscopy behavior of a few layered MoS2 and WS2 nanosheets synthesized using simple hydrothermal method. Our result reveals A1g and E12g modes soften as temperature increases from 77 K to 623 K. This behavior can be explained in terms of a double resonance process which is active in single- and few layer thick nanosheets. The frequency shifts and peak broadening can provide unambiguous, nondestructive, and accurate information of a few layered MoS2 and WS2. This mechanism can also be applicable in characterizing the structural, optical, electronic, and vibrational properties of other emerging layered materials.

Pulsed Laser-Deposited MoS2 Thin Films on W and Si: Field Emission and Photoresponse Studies

We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 μA/cm(2) is found to be 2.8 V/μm. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of ∼30 mA/cm(2) at a relatively lower applied voltage of ∼3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLD-MoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.

Enhanced field emission properties of doped graphene nanosheets with layered SnS2

We report here our experimental investigations on p-doped graphene using tin sulfide (SnS2), which shows enhanced field emission properties. The turn on field required to draw an emission current density of 1 μA/cm2 is significantly low (almost half the value) for the SnS2/reduced graphene oxide (RGO) nanocomposite (2.65 V/μm) compared to pristine SnS2 (4.8 V/μm) nanosheets. The field enhancement factor β (∼3200 for the SnS2 and ∼3700 for SnS2/RGO composite) was calculated from Fowler-Nordheim (F-N) plots, which indicates that the emission is from the nanometric geometry of the emitter. The field emission current versus time plot shows overall good emission stability for the SnS2/RGO emitter. The magnitude of work function of SnS2 and a SnS2/graphene composite has been calculated from first principles density functional theory (DFT) and is found to be 6.89 eV and 5.42 eV, respectively. The DFT calculations clearly reveal that the enhanced field emission properties of SnS2/RGO are due to a substantial lowe...

High efficiency electron field emission from protruded graphene oxide nanosheets supported on sharp silicon nanowires

Graphene oxide (GO) potentially has applications in vacuum microelectronic devices for realization of field emission displays. Graphene and its derivatives are expected to be efficient field emitters due to their unique electrical properties. However, the flat sheet structure of graphene or GO allows electron field emission only from the edges of graphene and GO nanosheets. In order to extract maximum field emission current density at lower applied voltage from the GO nanosheets, we supported and stretched them on sharp tips of silicon nanowires (SiNWs). Highly efficient and stable field emission with low turn-on field was observed for these SiNW–GO heterostructures. The sharp protrusions created by stretching of the GO nanosheets on SiNWs locally enhance the electric field and thus enhance the field emission characteristics. The dominant use of silicon in electronic devices makes this approach robust for the development of field emission devices using graphene based field emitters.

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode

Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

Field emission characteristics of pristine and N-doped graphene measured by in-situ transmission electron microscopy

We report the field emission characteristics of a few-layer pristine and N-doped graphene by the in-situ transmission electron microscopy. The measurements were performed with a Pt-Ir nanoprobe and at a vacuum gap of 400 nm. The turn on voltage, required to draw an emission current of 1 nA from pristine and N-doped graphene, was found to be 230 and 110 V, respectively. The lower turn on voltage for the N-doped graphene can be explained from the improved electrical conductivity and up-shift of the Fermi level with nitrogen doping. Structural deformation/contraction/buckling of the N-doped graphene sheet was observed with the field emission current exceeding ∼6.9 μA, which can be attributed to the Joule heating.

Controlled Ti seed layer assisted growth and field emission properties of Pb(Zr0.52Ti0.48)O3 nanowire arrays.

We report on the directed upright growth of ferroelectric (FE) Pb(Zr0.52Ti0.48)O3 (PZT) nanowire (NW) arrays with large aspect ratios of >60 using a Ti seed layer assisted hydrothermal process over large surface areas on ITO/glass substrates. In a two-step growth process, Ti seed layer of low surface roughness with a thickness of ~500 nm and grain size of ~100 nm was first deposited by radio frequency (RF) sputtering which was subsequently used as substrates for the growth of highly dense, single crystalline PZT NWs by controlled nucleation. The electron emission properties of the PZT NWs were investigated using the as-grown NWs as FE cathodes. A low turn-on field of ~3.4 V/μm was obtained from the NW arrays, which is impressively lower than that from other reported values. The results reported in this work give direction to the development of a facile growth technique for PZT NWs over large surfaces and also are of interest to the generation of high current electron beam from FE NW based cathodes for field emitter applications.