Ranko Hatsuda

Fabrication of photonic crystal structures by tertiary-butyl arsine-based metal–organic vapor-phase epitaxy for photonic crystal lasers

The fabrication of air/semiconductor two-dimensional photonic crystal structures by air-hole-retained crystal regrowth using tertiary-butyl arsine-based metal–organic vapor-phase epitaxy for GaAs-based photonic crystal lasers is investigated. Photonic crystal air holes with filling factors of 10–13%, depths of ~280 nm, and widths of 120–150 nm are successfully embedded. The embedded air holes exhibit characteristic shapes due to the anisotropy of crystal growth. Furthermore, a low lasing threshold of ~0.5 kA/cm2 is achieved with the fabricated structures.

Elliptical double-hole photonic-crystal surface-emitting lasers

In this paper, we demonstrate the operation of a photonic-crystal surface-emitting laser that has a double-hole two-dimensional photonic-crystal structure. We successfully fabricate this unique structure by employing air-hole retained crystal regrowth using metalorganic vapor phase epitaxy. Single-mode lasing having a narrow beam divergence of less than 0.2° is achieved with a large lasing area of 300×300 μm2.

Fabrication of photonic-crystal structures by TBAs-based MOVPE for photonic-crystal lasers

Summary form only given. We investigate fabrication of a photonic-crystal structure by air-hole retained crystal regrowth using TBAs-based MOVPE for GaAs based photonic-crystal lasers. Air holes having a filling factor of 10 % (the depth was 250 nm and the width was 110 nm) are successfully embedded. The embedded air holes show characteristic shapes due to anisotropy of growth rate along different crystal planes, such as gallium face and arsenic face. Furthermore, a low threshold of 0.5 kAcm-2 lasing is achieved with the fabricated structure.