Raquel Caballero

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specif...

The role of the CdS buffer layer in CuGaSe2-based solar cells

We present some results for Ga-rich CuGaSe2-based solar cells using different conditions for deposition of the CdS buffer layer. Three different recipes for the growth of the CdS buffer layers at 60 and 80 °C are compared. This work shows the importance of the adaptation of the CdS growth to the absorber layer. A maximum open circuit voltage Voc of 922 mV is achieved by using 60 °C as the chemical bath temperature and lower thiourea and ammonia concentrations. Temperature-dependent current–voltage and room temperature drive-level capacitance profiling measurements are carried out to study the CdS/CuGaSe2 interface properties. All devices are characterized by tunnelling-enhanced interface recombination. However, results show that the higher Voc obtained for the low bath temperature coincides with a reduced tunnelling component. This can be attributed to a lower net doping level in the space charge region. Secondary ion mass spectrometry analysis reveals Cu diffusion into the buffer layer when CdS is made at 80 °C. This agrees with the higher charge density observed for those devices, enhancing the tunnelling.

Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se2 thin-film solar cells

The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se2 (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minima with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profile...

Effect of Magnesium Incorporation on Solution-Processed Kesterite Solar Cells

The introduction of the alkaline-earth element Magnesium (Mg) into Cu2ZnSn(S,Se)4 (CTZSSe) is explored in view of potential photovoltaic applications. Cu2Zn1−xMgxSn(S,Se)4 absorber layers with variable Mg content x = 0…1 are deposited using the solution approach with dimethyl sulfoxide solvent followed by annealing in selenium atmosphere. For heavy Mg alloying with x = 0.55…1 the phase separation into Cu2SnSe3, MgSe2, MgSe and SnSe2 occurs in agreement with literature predictions. A lower Mg content of x = 0.04 results in the kesterite phase as confirmed by XRD and Raman spectroscopy. A photoluminescence maximum is red-shifted by 0.02 eV as compared to the band-gap and a carrier concentration NCV of 1 × 1016 cm−3 is measured for a Mg-containing kesterite solar cell device. Raman spectroscopy indicates that structural defects can be reduced in Mg-containing absorbers as compared to the Mg-free reference samples, however the best device efficiency of 7.2% for a Mg-containing cell measured in this study is lower than those frequently reported for the conventional Na doping.

RF Electromagnetic Field Treatment of Tetragonal Kesterite CZTSSe Light Absorbers

In this work, we propose a method to improve electro-optical and structural parameters of light-absorbing kesterite materials. It relies on the application of weak power hydrogen plasma discharges using electromagnetic field of radio frequency range, which improves homogeneity of the samples. The method allows to reduce strain of light absorbers and is suitable for designing solar cells based on multilayered thin film structures. Structural characteristics of tetragonal kesterite Cu2ZnSn(S, Se)4 structures and their optical properties were studied by Raman, infrared, and reflectance spectroscopies. They revealed a reduction of the sample reflectivity after RF treatment and a modification of the energy band structure.

Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals

The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2–4.6u2009eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices.