Rebecca Bolt Ettlinger

Pulsed laser deposition from ZnS and Cu2SnS3 multicomponent targets

Abstract Thin films of ZnS and Cu 2 SnS 3 have been produced by pulsed laser deposition (PLD), the latter for the first time. The effect of fluence and deposition temperature on the structure and the transmission spectrum as well as the deposition rate has been investigated, as has the stoichiometry of the films transferred from target to substrate. Elemental analysis by energy dispersive X-ray spectroscopy indicates lower S and Sn content in Cu 2 SnS 3 films produced at higher fluence, whereas this trend is not seen in ZnS. The deposition rate of the compound materials measured in atoms per pulse is considerably larger than that of the individual metals, Zn, Cu, and Sn.

ZnS top layer for enhancement of the crystallinity of CZTS absorber during the annealing

Pulsed Laser Deposition (PLD) of thin films of Cu2ZnSnS4 (CZTS) has not yet led to solar cells with high efficiency. The reason for the relative low efficiency is discussed and a way to overcome this issue is presented. The present thin film absorbers of CZTS suffer from loss of volatile Zn during the plasma-assisted transfer with PLD. This can be compensated by adding a thin layer of ZnS (~ 80 nm) on top of the CZTS layer before the annealing. In this work the stack ordering of the two layers CZTS and ZnS is investigated, indicating that the configuration with ZnS on top of a CZTS film gives a better crystalline quality of CZTS after the annealing, as demonstrated by X-ray diffraction and Raman spectroscopy.