Reeta Tarkiainen

Multiwalled carbon nanotube: Luttinger versus Fermi liquid

We have measured

Single-electron transistor made of two crossing multiwalled carbon nanotubes and its noise properties

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Multiwalled carbon nanotubes as ultrasensitive electrometers

curves of multiwalled carbon nanotubes using end contacts. At low voltages, the tunneling conductance obeys non-Ohmic power law, which is predicted both by the Luttinger liquid and the environment-quantum-fluctuation theories. However, at higher voltages we observe a crossover to Ohms law with a Coulomb-blockade offset, which agrees with the environment-quantum-fluctuation theory, but cannot be explained by the Luttinger-liquid theory. From the high-voltage tunneling conductance we determine the transmission line parameters of the nanotubes.

Multiwalled carbon nanotubes as building blocks in nanoelectronics

A three-terminal nanotube device was fabricated from two multiwalled nanotubes by pushing one on top of the other using an atomic-force microscope. The lower nanotube, with gold contacts at both ends, acted as the central island of a single-electron transistor while the upper one functioned as a gate electrode. Coulomb blockade oscillations were observed on the nanotube at sub-Kelvin temperatures. The voltage noise of the nanotube single-electron transistor (SET) was gain dependent as in conventional SETs. The charge sensitivity at 10 Hz was 6×10−4 e/Hz.

Manufacture of single electron transistors using AFM manipulation on multiwalled carbon nanotubes

We show that it is possible to construct low-noise single-electron transistors (SETs) using free-standing multiwalled carbon nanotubes. The 1/fα-noise of our devices, 6×10−6e/Hz at 45 Hz, is close in the performance to the best metallic SETs of today.

Shot noise of a multiwalled carbon nanotube field effect transistor

AbstractMolecular level components, like carbon multiwalled nanotubes (MWNT), show great potential for future nanoelectronics. At low frequencies, only the outermost carbon layer determines the transport properties of the MWNT. Due to the multiwalled structure and large capacitive interlayer coupling, also the inner layers contribute to the conduction at high frequencies. Consequently, the conduction properties of MWNTs are not very far from those of regular conductors with well-defined electrical characteristics. In our work we have experimentally utilized this fact in constructing various nanoelectronic components out of MWNTs, such as single electron transistors (SET), lumped resistors, and transmission lines. We present results on several nanotube samples, grown both using chemical vapor deposition as well as arc-discharge vaporization. Our results show that SET-electrometers with a noise level as low as 6·10−6 e/

Multiwalled carbon nanotubes as single electron transistors

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Transport in strongly disordered multiwalled carbon nanotubes

(at 45 Hz) can be built using arc-discharge-grown carbon nanotubes. Moreover, short nanotubes with small contact areas are found to work at 4.2 K with good gate modulation. Reactive ion etching on CVD tubes is employed to produce nearly Ohmic components with a resistance of 200 kΩ over a 2 μm section. At high frequencies, MWNTs work over micron distances as special LC-transmission lines with high impedance, on the order of 5 kΩ.