Reeta Tarkiainen
Helsinki University of Technology
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Featured researches published by Reeta Tarkiainen.
Physical Review B | 2001
Reeta Tarkiainen; M. Ahlskog; Jari Penttilä; Leif Roschier; Pertti J. Hakonen; Mikko Paalanen; E. B. Sonin
We have measured
Applied Physics Letters | 2000
M. Ahlskog; Reeta Tarkiainen; Leif Roschier; Pertti J. Hakonen
\mathrm{IV}
Applied Physics Letters | 2001
Leif Roschier; Reeta Tarkiainen; M. Ahlskog; Mikko Paalanen; Pertti J. Hakonen
curves of multiwalled carbon nanotubes using end contacts. At low voltages, the tunneling conductance obeys non-Ohmic power law, which is predicted both by the Luttinger liquid and the environment-quantum-fluctuation theories. However, at higher voltages we observe a crossover to Ohms law with a Coulomb-blockade offset, which agrees with the environment-quantum-fluctuation theory, but cannot be explained by the Luttinger-liquid theory. From the high-voltage tunneling conductance we determine the transmission line parameters of the nanotubes.
Journal of Low Temperature Physics | 2001
M. Ahlskog; Pertti J. Hakonen; Mikko Paalanen; Leif Roschier; Reeta Tarkiainen
A three-terminal nanotube device was fabricated from two multiwalled nanotubes by pushing one on top of the other using an atomic-force microscope. The lower nanotube, with gold contacts at both ends, acted as the central island of a single-electron transistor while the upper one functioned as a gate electrode. Coulomb blockade oscillations were observed on the nanotube at sub-Kelvin temperatures. The voltage noise of the nanotube single-electron transistor (SET) was gain dependent as in conventional SETs. The charge sensitivity at 10 Hz was 6×10−4 e/Hz.
Microelectronic Engineering | 2002
Leif Roschier; Reeta Tarkiainen; M. Ahlskog; Mikko Paalanen; Pertti J. Hakonen
We show that it is possible to construct low-noise single-electron transistors (SETs) using free-standing multiwalled carbon nanotubes. The 1/fα-noise of our devices, 6×10−6e/Hz at 45 Hz, is close in the performance to the best metallic SETs of today.
Physical Review B | 2007
F. Wu; Taku Tsuneta; Reeta Tarkiainen; David Gunnarsson; Taihong Wang; Pertti J. Hakonen
AbstractMolecular level components, like carbon multiwalled nanotubes (MWNT), show great potential for future nanoelectronics. At low frequencies, only the outermost carbon layer determines the transport properties of the MWNT. Due to the multiwalled structure and large capacitive interlayer coupling, also the inner layers contribute to the conduction at high frequencies. Consequently, the conduction properties of MWNTs are not very far from those of regular conductors with well-defined electrical characteristics. In our work we have experimentally utilized this fact in constructing various nanoelectronic components out of MWNTs, such as single electron transistors (SET), lumped resistors, and transmission lines. We present results on several nanotube samples, grown both using chemical vapor deposition as well as arc-discharge vaporization. Our results show that SET-electrometers with a noise level as low as 6·10−6 e/
Physica E-low-dimensional Systems & Nanostructures | 2003
Reeta Tarkiainen; M. Ahlskog; Pertti J. Hakonen; Mikko Paalanen
International Symposium on Nanonetwork Materials, Fullerenes, Nanotubes, and Related | 2001
M. Ahlskog; Reeta Tarkiainen; Leif Roschier; Mikko Paalanen; Pertti J. Hakonen
\sqrt {Hz}
Physica E-low-dimensional Systems & Nanostructures | 2005
Reeta Tarkiainen; Leif Roschier; M. Ahlskog; Mikko Paalanen; Pertti J. Hakonen
Physical Review B | 2004
Reeta Tarkiainen; M. Ahlskog; A. Zyuzin; Pertti J. Hakonen; Mikko Paalanen
(at 45 Hz) can be built using arc-discharge-grown carbon nanotubes. Moreover, short nanotubes with small contact areas are found to work at 4.2 K with good gate modulation. Reactive ion etching on CVD tubes is employed to produce nearly Ohmic components with a resistance of 200 kΩ over a 2 μm section. At high frequencies, MWNTs work over micron distances as special LC-transmission lines with high impedance, on the order of 5 kΩ.