Reiner Trommer

InGaAs dual-pin detector with very symmetric properties for use in coherent optical receivers

A dual InGaAs p-i-n photodiode structure based on metalorganic vapor-phase epitaxy or liquid-phase epitaxy layers grown on planar semi-insulating InP substrates is discussed. The photodetector shows very symmetric properties for the two devices. It is shown that an additional InP p-n junction beneath the photodiodes effectively blocks leakage currents through the substrate and results in dark currents on the order of 100 pA for both of the electrically connected photodiodes.<<ETX>>

Photodetectors for optical fiber communication in the 1–1.6 μm wavelength range

Abstract An introduction to the specific features and the application of photodetectors for optical fiber communication in the 1–1.6 μm wavelength range is given. The requirements set up by the fiber properties are summarized. Two specific device structures, based on the widely used (In, Ga)(As, P) III–V semiconductor alloy, are presented. Finally, the future aspects of monolithically integrated optoelectronic, optic and electronic components are considered.